VND5T100AJ-E
Datasheet
Double channel high-side driver with analog current sense
for 24 V automotive applications
Features
Description
12
1
PowerSSO-12
Parameter
Value
Max. transient supply voltage
VCC
58 V
Operating voltage range
VCC
8 to 36 V
Typ. on-state resistance (per channel)
RON
100 mΩ
Current limitation (typ.)
ILIM
22 A
Off-state supply current
IS
2 µA(1)
1. Typical value with all loads connected.
Product status link
•
•
VND5T100AJ-E
Product summary
Order code
VND5T100AJ-ETR
Package
PowerSSO-12
Packing
Tape and reel
•
•
AEC-Q100 qualified
General
–
Very low standby current
–
3.0 V CMOS compatible input
–
Optimized electromagnetic emission
–
Very low electromagnetic susceptibility
–
Compliant with European directive 2002/95/EC
–
Fault reset standby pin (FR_Stby)
Diagnostic functions
–
Proportional load current sense
–
High current sense precision for wide range currents
–
Off-state openload detection
–
Output short to VCC detection
–
Overload and short to ground latch-off
–
Thermal shutdown latch-off
–
Very low current sense leakage
Protections
–
Undervoltage shutdown
–
Overvoltage clamp
–
Load current limitation
–
Self limiting of fast thermal transients
–
Protection against loss of ground and loss of VCC
–
–
Thermal shutdown
Electrostatic discharge protection
Applications
•
All types of resistive, inductive and capacitive loads
DS7125 - Rev 4 - June 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
VND5T100AJ-E
Description
The VND5T100AJ-E is a monolithic device made using STMicroelectronics VIPower technology, intended for
driving resistive or inductive loads with one side connected to the ground. Active VCC pin voltage clamp protects
the device against low energy spikes.
The device integrates an analog current sense, which delivers a current proportional to the load current.
Fault conditions such as overload, overtemperature, or short to VCC are reported via the current sense pin.
Output current limitation protects the device in overload conditions. The device latches off in case of overload or
thermal shutdown.
The device is reset by a low level pass on the fault reset standby pin.
A permanent low level on the inputs and on the fault reset standby pins disables all outputs and sets the device in
standby mode.
DS7125 - Rev 4
page 2/31
VND5T100AJ-E
Block diagram and pin description
1
Block diagram and pin description
Figure 1. Block diagram
VCC
Signal Clamp
Control & Diagnostic 2
Undervoltage
IN1
Control & Diagnostic 1
Power
Clamp
DRIVER
IN2
CH1
VON
Limitation
Over
Temperature
Current
Limitation
OFF-state
Open-load
FR_Stby
VSENSEH
CS1
Current
Sense
CS2
CH2
OUT2
LOGIC
OUT1
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
GND
GAPGCFT00643
Table 1. Pin function
Name
VCC
OUT1, 2
Function
Battery connection.
Power outputs.
GND
Ground connection.
IN1, 2
Voltage controlled input pins with hysteresis, CMOS compatible. They control output switch state.
CS1, 2
Analog current sense pins, they deliver a current proportional to the load current.
FR_Stby
In case of latch-off for overtemperature/overcurrent condition, a low pulse on the FR_Stby pin is
needed to reset the channel.
The device enters in standby mode if all inputs and the FR_Stby pin are low.
DS7125 - Rev 4
page 3/31
VND5T100AJ-E
Block diagram and pin description
Figure 2. Configuration diagram PowerSSO-12 (top view)
TAB = VCC
CS1
1
12
VCC
IN1
2
11
OUT1
FR_STBY
3
10
OUT1
GND
4
9
OUT2
IN2
5
8
OUT2
CS2
6
7
VCC
PowerSSO-12
GAPGCFT000109
Table 2. Suggested connections for unused and not connected pins
Connection/pin
CurrentSense
NC
Output
Input
FR_Stby
Floating
Not allowed
X(1)
X
X
X
To ground
Through 10 kΩ resistor
X
Not allowed
Through 10 kΩ resistor
Through 10 kΩ resistor
1. X: do not care.
DS7125 - Rev 4
page 4/31
VND5T100AJ-E
Electrical specification
2
Electrical specification
Figure 3. Current and voltage conventions
IS
VCC
IFR_Stby
OUTn
FR_Stby
VFR_Stby
IINn
CSn
INn
VINn
VCC
VFn
IOUTn
VOUTn
ISENSEn
VSENSEn
GND
IGND
GAPGCFT00195_v2
2.1
Absolute maximum ratings
Stressing the device above the ratings listed in the Table 3 may cause permanent damage to the device. These
are stress ratings only and operation of the device at these or any other conditions above those indicated in
the operating sections of this specification is not implied. Exposure to the conditions reported in this section for
extended periods may affect device reliability.
Table 3. Absolute maximum ratings
Symbol
Value
Unit
VCC
DC supply voltage
58
V
-VCC
Reverse DC supply voltage
0.3
V
-IGND
DC reverse ground pin current
200
mA
IOUT
DC output current
Internally limited
A
-IOUT
Reverse DC output current
20
A
DC input current
-1 to 10
mA
IFR_Stby
Fault reset standby DC input current
-1 to 1.5
mA
-ICSENSE
DC reverse CS pin current
200
mA
VCSENSE
Current sense maximum voltage
(VCC - 58) to VCC
V
IIN
EMAX
Maximum switching energy
(L = 1.9 mH; VBAT = 32 V; TJstart = 150 °C; IOUT = IlimL (typ.))
70
mJ
Lsmax
Maximum stray inductance in short circuit condition
RL = 300 mΩ, VBAT = 32 V, TJstart = 150 °C, IOUT = IlimH (max.)
40
μH
VESD
VESD
TJ
DS7125 - Rev 4
Parameter
Electrostatic discharge (human body model: R = 1.5 kΩ, C = 100 pF)
Charge device model (CDM-AEC-Q100-011)
Junction operating temperature
IN1, 2
4000
CS1, 2
2000
FR_Stby
4000
OUT1, 2
5000
VCC
5000
V
750
V
-40 to 150
°C
page 5/31
VND5T100AJ-E
Thermal data
Symbol
Tstg
2.2
Parameter
Storage temperature
Value
Unit
-55 to 150
°C
Thermal data
Table 4. Thermal data
Symbol
DS7125 - Rev 4
Parameter
RthJC
Thermal resistance, junction-to-case (with one channel ON)
RthJA
Thermal resistance, junction-to-ambient
Value
Unit
6
°C/W
See Figure 27
°C/W
page 6/31
VND5T100AJ-E
Electrical characteristics
2.3
Electrical characteristics
8 V < VCC < 36 V, -40 °C < TJ < 150 °C, unless otherwise specified.
Table 5. Power section
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
8
24
36
V
5
V
VCC
Operating supply voltage
VUSD
Undervoltage shutdown
3.5
Undervoltage shutdown hysteresis
0.5
VUSDhyst
RON
Vclamp
IOUT = 1.5 A, TJ = 25 °C
On-state resistance(1)
100
IOUT = 1.5 A, TJ = 150 °C
IS = 20 mA
Clamp voltage
V
200
58
mΩ
64
70
V
2(2)
5(2)
µA
4.2
6
mA
0.01
3
Off-state, VCC = 24 V, TJ = 25 °C,
VIN = VOUT = VSENSE = 0 V,
IS
VFR_Stby = 0 V
Supply current
On-state, VCC = 24 V,
VIN = 5 V, IOUT = 0 A
VIN = VOUT = 0 V,
IL(off)
VCC = 24 V, TJ = 25 °C
Off-state output current
VIN = VOUT = 0 V,
VCC = 24 V, TJ = 125 °C
VF
Output - VCC diode voltage
0
µA
0
5
-IOUT = 1.5 A, TJ = 150 °C
0.7
V
Max.
Unit
1. For each channel.
2. Power MOSFET leakage included.
Table 6. Switching (VCC = 24 V, TJ = 25 °C)
Symbol
Parameter
Test conditions
Min.
Typ.
td(on)
Turn-on delay time
RL = 16 Ω
27
µs
td(off)
Turn-off delay time
RL = 16 Ω
38
µs
(dVOUT/dt)(on) Turn-on voltage slope
RL = 16 Ω
1
V/µs
(dVOUT/dt)(off) Turn-off voltage slope
RL = 16 Ω
0.65
V/µs
WON
Switching energy losses during twon
RL = 16 Ω
0.23
mJ
WOFF
Switching energy losses during twoff
RL = 16 Ω
0.26
mJ
Table 7. Logic inputs
Symbol
DS7125 - Rev 4
Parameter
VIL
Input low level voltage
IIL
Low level input current
VIH
Input high level voltage
IIH
High level input current
VI(hyst)
Input hysteresis voltage
Test conditions
VIN = 0.9 V
Min.
Typ.
Max.
Unit
0.9
V
1
µA
2.1
V
VIN = 2.1 V
10
0.25
µA
V
page 7/31
VND5T100AJ-E
Electrical characteristics
Symbol
VICL
Parameter
Test conditions
Min.
IIN = 1 mA
Input clamp voltage
5.5
IIN = -1 mA
VFR_Stby_L
Fault_reset_standby low level voltage
IFR_Stby_L
Low level fault_reset_standby current
VFR_Stby_H
Fault_reset_standby high level
voltage
IFR_Stby_H
High level fault_reset_standby current VFR_Stby = 2.1 V
VFR_Stby(hyst)
Fault_reset_standby hysteresis
voltage
VFR_Stby_CL
Fault_reset_standby clamp voltage
Typ.
Max.
7
-0.7
0.9
VFR_Stby = 0.9 V
V
V
1
µA
2.1
V
10
0.25
IFR_Stby = 15 mA (t < 10 ms)
Unit
V
11
IFR_Stby = -1 mA
µA
15
-0.7
V
V
treset
Overload latch-off reset time
See Figure 4
2
24
µs
tstby
Standby delay
See Figure 5
120
1200
µs
Figure 4. treset definition
treset
FR_Stby
IN
OUTPUT
CS
Overload
Channel
GAPGCFT000112
Figure 5. tstby definition
FR_Stby
INPUTn
IGND
tstby
tstby
GAPGCFT000111_v2
DS7125 - Rev 4
page 8/31
VND5T100AJ-E
Electrical characteristics
Table 8. Protections and diagnostics
Symbol
Parameter
Test conditions
IlimH
DC short circuit current
IlimL
Short circuit current during
thermal cycling
TTSD
Shutdown temperature
TR
Reset temperature
TRS
Thermal reset of status
THYST
VCC = 24 V
Min.
Typ.
Max.
16
22
30
5 V < VCC < 36 V
Unit
A
30
VCC = 24 V, TR < TJ < TTSD
6
A
150
175
TRS + 1
TRS + 5
200
°C
°C
135
°C
Thermal hysteresis (TTSD - TR)
VDEMAG
Turn-off output voltage clamp
IOUT = 1.5 A, VIN = 0 V, L = 6 mH
VON
Output voltage drop limitation
IOUT = 50 mA, TJ = -40 °C to 150 °C
7
°C
VCC - 58 VCC - 64 VCC - 70
V
25
mV
Table 9. Current sense (8 V < VCC < 36 V)
Symbol
K1
dK1/K1(1)
Parameter
IOUT/ISENSE
Current sense ratio drift
Test conditions
IOUT/ISENSE
K3
dK3/K3(1)
K4
dK4/K4(1)
ISENSE0
VSENSE
DS7125 - Rev 4
Current sense ratio drift
IOUT/ISENSE
Current sense ratio drift
IOUT/ISENSE
Current sense ratio drift
Analog sense leakage current
Max analog sense output voltage
Max.
930
IOUT = 350 mA, VSENSE = 1 V,
TJ = 25 °C to 150 °C
1050
2020
IOUT = 350 mA, VSENSE = 1 V,
TJ = -40 °C to 150 °C
-15
15
1225
1835
IOUT = 0.8 A, VSENSE = 2 V,
TJ = 25 °C to 150 °C
dK2/K2(1)
Typ.
IOUT = 350 mA, VSENSE = 1 V,
TJ = -40 °C to 150 °C
IOUT = 0.8 A, VSENSE = 2 V,
TJ = -40 °C to 150 °C
K2
Min.
IOUT = 0.8 A, VSENSE = 2 V,
TJ = -40 °C to 150 °C
Unit
2185
1547
%
1528
1310
1745
-12
12
IOUT = 1.5 A, VSENSE = 2 V,
TJ = -40 °C to 150 °C
1340
IOUT = 1.5 A, VSENSE = 2 V,
TJ = 25 °C to 150 °C
1405
1655
IOUT = 1.5 A, VSENSE = 2 V,
TJ = -40 °C to 150 °C
-8
8
%
1715
1525
IOUT = 6 A, VSENSE = 4 V,
TJ = -40 °C to 150 °C
1450
IOUT = 6 A, VSENSE = 4 V,
TJ = 25 °C to 150 °C
1475
1560
IOUT = 6 A, VSENSE = 4 V,
TJ = -40 °C to 150 °C
-5
5
IOUT = 0 A, VSENSE = 0 V, VIN = 0 V,
TJ = -40 °C to 150 °C
0
1
IOUT = 0 A, VSENSE = 0 V, VIN = 5 V,
TJ = -40 °C to 150 °C
0
IOUT = 6 A, RSENSE = 3.9 kΩ
5
%
1600
1522
%
µA
2
V
page 9/31
VND5T100AJ-E
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSENSEH
Analog sense output voltage in fault
condition(2)
VCC = 24 V, RSENSE = 3.9 kΩ
7.5
8.5
9.5
V
ISENSEH
Analog sense output current in fault
condition(2)
VCC = 24 V, VSENSE = 5 V
4.9
9
12
mA
100
200
µs
150
µs
5
20
µs
Min.
Typ.
Max.
Unit
2
-
4
V
180
-
1800
µs
-120
-
0
µA
-
20
µs
-
50
µs
VSENSE < 4 V, 0.07 A < IOUT < 6 A,
tDSENSE2H
Delay response time from rising edge
of INPUT pins
ISENSE = 90% of ISENSEMAX,
(see Figure 6)
VSENSE < 4 V,
ΔtDSENSE2H
ISENSE = 90 % of ISENSEMAX,
Delay response time between rising
edge of output current and rising edge IOUT = 90 % of IOUTMAX,
of current sense
IOUTMAX = 1.5 A
(see Figure 10)
VSENSE < 4 V,
tDSENSE2L
Delay response time from falling edge 0.07 A < IOUT < 6 A,
of INPUT pins
ISENSE = 10% of ISENSEMAX,
(see Figure 6)
1. Specified by design, not tested in production.
2. Fault condition includes: power limitation, overtemperature and openload in off-state condition.
Table 10. Openload detection (VFR_Stby = 5 V)
Symbol
Parameter
VOL
Openload off-state voltage detection
threshold
tDSTKON
Output short circuit to VCC detection
delay at turn off
Test conditions
VIN = 0 V, 8 V < VCC < 36 V
VFR_Stby = 5 V
VFR_Stby = 5 V
(see Figure 7)
VIN = 0 V, VSENSE = 0 V,
IL(off2)
Off-state output current at VOUT = 4 V
VOUT rising from 0 V to 4 V
VFR_Stby = 5 V
VOUT = 4 V, VIN = 0 V,
td_vol
Delay response from output rising
edge to VSENSE rising edge in
openload
VSENSE = 90 % of VSENSEH,
RSENSE = 3.9 kΩ
VFR_Stby = 5 V
tDFRSTK_ON
DS7125 - Rev 4
Output short circuit to VCC detection
delay at FR_Stby activation
Input1, 2 = low
(see Figure 9)
page 10/31
VND5T100AJ-E
Electrical characteristics
Figure 6. Current sense delay characteristics
INPUT
LOAD CURRENT
SENSE CURRENT
tDSENSE2L
tDSENSE2H
GAPGCFT000117
Figure 7. Openload off-state delay timing
Output stuck at VCC
VIN
VOUT > VOL
VSENSEH
VCS
tDSTKON
NOTE: VFR_stby = 5 V.
GAPGCFT000113
DS7125 - Rev 4
page 11/31
VND5T100AJ-E
Electrical characteristics
Figure 8. Switching characteristics
VOUT
tWon
tWoff
90%
80%
(dVOUT/dt)(off)
(dVOUT/dt)(on)
tr
tf
10%
t
INPUT
td(on)
td(off)
t
GAPGCFT000114
Figure 9. Output stuck to VCC detection delay time at FR_Stby activation
FR_Stby
VSENSEH
VCS
tDFRSTK_ON
Input1,2 = Low
GAPGCFT00038_v2
DS7125 - Rev 4
page 12/31
VND5T100AJ-E
Electrical characteristics
Figure 10. Delay response time between rising edge of ouput current and rising edge of current sense
VIN
ΔtDSENSE2H
t
IOUT
IOUTMAX
90% IOUTMAX
t
ISENSE
ISENSEMAX
90% ISENSEMAX
t
GAPGCFT000115
Figure 11. Output voltage drop limitation
VCC - VOUT
TJ = 150 °C
TJ = 25 °C
TJ = -40 °C
VON
IOUT
VON /RON (T)
AG00074V1
DS7125 - Rev 4
page 13/31
VND5T100AJ-E
Electrical characteristics
Figure 12. Device behavior in overload condition
treset
treset
FAULT_RESET
INn
OUTPUTn
VSENSEH
CSn
overload
overload reset
overload diag reset
OVERLOAD(*)
CHANNELn
1
2
3
4
5 6
7
8
1: OUTPUTn and CSn controlled by INn
2: FAULT_RESET from ‘0’ to ‘1’ → no action on CSn pin
3: overload latch-off. INn high → CSn high
4: FAULT_RESET low AND Temp channeln < overload_reset → overload latch reset after t_reset
4 to 5: FAULT_RESET low AND INn high → thermal cycling, CSn high
5: FAULT_RESET high → latch-off reset disabled
6 to 7: overload event and FAULT_RESET high → latch-off, no thermal cycling
7 to 8: overload diagnostic disabled/enabled by the input
8: overload latch-off reset by FAULT_RESET
(*) OVERLOAD = thermal shutdown OR power limitation
GAPGCFT000116_v2
Table 11. Truth table
Conditions
Standby
Normal operation
Overload
Overtemperature/short to ground
Undervoltage
Short to VBAT
Openload off-state (with pull-up)
Negative output voltage clamp
DS7125 - Rev 4
Fault reset
standby
Input
Output
Sense
L
L
L
0
X
L
L
0
X
H
H
Nominal
X
L
L
0
X
H
H
> Nominal
X
L
L
0
L
H
Cycling
VSENSEH
H
H
Latched
VSENSEH
X
X
L
0
L
L
H
0
H
L
H
VSENSEH
X
H
H
< Nominal
L
L
H
0
H
L
H
VSENSEH
X
H
H
0
X
L
Negative
0
page 14/31
VND5T100AJ-E
Electrical characteristics
Table 12. Electrical transient requirements (part 1)
Number of
ISO 7637-2:
2004 (E)
Test levels(1)
Test pulse
III
IV
1
-450 V
-600 V
2a
37 V
50 V
3a
- 150 V
- 200 V
3b
+ 150 V
4
5b(2)
pulses or
Burst cycle/pulse
test times
repetition time
5000
Delays and
impedence
0.5 s
5s
1 ms, 50 Ω
0.2 s
5s
50 µs, 2 Ω
1h
90 ms
100 ms
0.1 µs, 50 Ω
+ 200 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
- 12 V
- 16 V
1 pulse
100 ms, 0.01 Ω
+ 123 V
+ 174 V
1 pulse
350 ms, 1 Ω
pulses
5000
pulses
1. The above test levels must be considered referred to VCC = 24.5 V except for pulse 5b.
2. Valid in case of external load dump clamp: 58 V maximum referred to ground.
Table 13. Electrical transient requirements (part 2)
Test level results
ISO 7637-2: 2004 (E)
Test pulse
III
IV
1
C
C
2a
C
C
3a
C
C
3b(1)
E
E
3b(2)
C
C
4
C
C
5b(3)
C
C
1. Without capacitor between VCC and GND.
2. With 10 nF between VCC and GND.
3. External load dump clamp, 58 V maximum, referred to ground.
Table 14. Electrical transient requirements (part 3)
Class
DS7125 - Rev 4
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to disturbance and cannot
be returned to proper operation without replacing the device.
page 15/31
VND5T100AJ-E
Electrical characteristics (curves)
2.4
Electrical characteristics (curves)
Figure 13. Off-state output current
Figure 14. High level input current
Iloff [µA]
IIH [μA]
GAPGCFT00056
1.4
4.5
1.2
3.5
3.0
0.8
2.5
Off-state,
VCC = 24 V,
VIN = VOUT = 0 V
0.6
2.0
1.5
0.4
1.0
0.2
0.5
-25
0
25
50
75
Tc [ °C]
100
125
150
175
0.0
-50
6.8
50
75
100
125
150
175
GAPGCFT00059
2.0
1.8
IIN = 1 mA
1.6
6.4
1.4
6.2
1.2
6.0
1.0
5.8
0.8
5.6
0.6
5.4
0.4
5.2
0.2
-25
0
25
50
75
100
125
150
175
0.0
-50
-25
0
25
50
75
100
125
150
TC [°C]
TC [°C]
Figure 17. High level input voltage
Figure 18. Input hysteresis voltage
VIH [V]
175
Vihyst [V]
GAPGCFT00060
4.0
GAPGCFT00061
1.0
0.9
3.5
0.8
3.0
0.7
2.5
0.6
0.5
2.0
0.4
1.5
0.3
1.0
0.2
0.5
0.1
-25
0
25
50
TC [°C]
DS7125 - Rev 4
25
VIL [V]
GAPGCFT00058
7.0
0.0
-50
0
Figure 16. Low level input voltage
VICL [V]
5.0
-50
-25
TC [°C]
Figure 15. Input clamp voltage
6.6
VIN = 2.1 V
4.0
1.0
0.0
-50
GAPGCFT00057
5.0
75
100
125
150
175
0.0
-50
-25
0
25
50
75
100
125
150
175
TC [°C]
page 16/31
VND5T100AJ-E
Electrical characteristics (curves)
Figure 19. On-state resistance vs TC
Figure 20. On-state resistance vs VCC
RON [mΩ]
RON [mΩ]
GAPGCFT00062
200
120
160
TC =125°C
140
IOUT =1.5A
VCC =24V
120
100
100
80
80
60
60
TC =25°C
TC = - 40°C
40
40
20
20
0
-50
TC =150°C
180
160
140
GAPGCFT00063
200
180
0
-25
0
25
50
75
100
125
150
5
175
10
15
20
25
TC [°C]
Figure 21. Turn-on voltage slope
35
40
Figure 22. Turn-off voltage slope
(dVout/dt)on [V/μs]
(dVout/dt)Off [V/μs]
GAPGCFT00065
2.0
GAPGCFT00066
1.4
1.8
1.6
1.2
VCC=24V
RL=16Ω
1.4
VCC =24V
RL =16Ω
1.0
1.2
0.8
1.0
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
-50
30
VCC [V]
0.0
-50
-25
0
25
50
75
100
125
150
-25
0
25
175
50
75
100
125
150
175
TC [°C]
TC [°C]
Figure 23. ILIMH vs TC
IlimH [A]
GAPGCFT00064
23.0
22.5
VCC =24V
22.0
21.5
21.0
20.5
20.0
19.5
-50
-25
0
25
50
75
100
125
150
175
TC [°C]
DS7125 - Rev 4
page 17/31
VND5T100AJ-E
Application information
3
Application information
Figure 24. Application schematic
+5V
VCC
Rprot
FR_Stby
DId
MCU
Rprot
IN
Rprot
CS
OUT
GND
Cext
RSENSE
VGND
DGND
GAPGCFT000119
3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (RGND only)
This solution can be used with any load type.
The following is an indication on how to dimension the RGND resistor.
1.
RGND ≤ 600 mV / (IS(on)max.)
2.
RGND ≥ (-VCC) / (-IGND)
Where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of
the device datasheet.
Power dissipation in RGND (when VCC < 0 V: during reverse battery situations) is:
PD = (-VCC)2 / RGND
This resistor can be shared among several different HSDs. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max. becomes the sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not shared by the device ground then the RGND produces a shift
(IS(on)max. * RGND) in the input thresholds and the status output values. This shift varies depending on how many
devices are ON in the case of several high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor,
then ST suggests solution 2 is used (see below).
DS7125 - Rev 4
page 18/31
VND5T100AJ-E
Load dump protection
3.1.2
Solution 2: diode (DGND) in the ground line
A resistor (RGND = 4.7 kΩ) should be inserted in parallel to DGND if the device drives an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence
of the ground network produces a shift (≈600 mV) in the input threshold and in the status output values, if the
microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares
the same diode/resistor network.
3.2
Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the VCC maximum DC
rating. The same applies if the device is subject to transients on the VCC line that are greater than the ones shown
in the ISO 7637-2 2004 (E) Table 12, Table 13 and Table 14.
3.3
MCU I/Os protection
If a ground protection network is used and negative transient is present on the VCC line, the control pins are
pulled negative. ST suggests that a resistor (Rprot) has to be inserted in line to prevent the microcontroller I/Os
pins from latching-up.
The value of these resistors is a compromise between the leakage current of the microcontroller and the current
required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os.
Equation: Rprot range calculation
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC - VIH - VGND) / IIHmax
Calculation example:
For VCCpeak = -600 V and Ilatchup ≥ 20 mA; VOHμC ≥ 4.5 V
30 kΩ ≤ Rprot ≤ 180 kΩ.
Recommended value: Rprot = 60 kΩ.
DS7125 - Rev 4
page 19/31
VND5T100AJ-E
Maximum demagnetization energy (VCC = 24 V)
4
Maximum demagnetization energy (VCC = 24 V)
Figure 25. Maximum turn off current versus inductance
GAPGCFT00810
100
Single pulse TJstart = 150 °C
Repetitive pulse TJstart = 100 °C
Repetitive pulse TJstart = 125 °C
A
I (A)
C
B
10
1
1
10
100
1000
L (mH)
Note:
DS7125 - Rev 4
Values are generated with RL = 0 Ω. In case of repetitive pulses, TJstart (at the beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
page 20/31
VND5T100AJ-E
Package and PCB thermal data
5
Package and PCB thermal data
5.1
PowerSSO-12 thermal data
Figure 26. PowerSSO-12 PCB
GAPGCFT000120
Layout condition of Rth and Zth measurements (board finish thickness 1.6 mm ±10%; board double layer; board
dimension 77 mm x 86 mm; board material FR4; Cu thickness 0.070 mm (front and back side); thermal vias
separation 1.2 mm; thermal via diameter 0.3 mm ±0.08 mm; Cu thickness on vias 0.025 mm; footprint dimension
4.1 mm x 6.5 mm).
Figure 27. RthJA vs PCB copper area in open box free air condition (one channel ON)
RthJA (°C/W)
GAPGCFT000124
65
60
55
RthJA
50
45
40
35
30
0
2
4
PCB Cu heatsink area
DS7125 - Rev 4
6
8
10
(cm2)
page 21/31
VND5T100AJ-E
PowerSSO-12 thermal data
Figure 28. PowerSSO-12 thermal impedance junction ambient single pulse (one channel ON)
Zth (°C/W)
GAPGCFT000125
100
Cu = 8 cm2
Cu = 2 cm2
Cu = footprint
10
1
0.1
0.0001
t (s)
0.1
0.01
0.001
1
10
100
1000
Figure 29. Thermal fitting model of a double channel HSD in PowerSSO-12
PdCh1
PdCh2
TJ
TJ
C1
C2
R1
R2
C7
C8
R7
R8
C3
C4
C5
C6
R3
R4
R5
R6
GAPGCFT00438
The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections
(power limitation or thermal cycling during thermal shutdown) are not triggered.
Equation: pulse calculation formula
Zthδ = Rth · δ + Zthtp (1 - δ)
Where δ = tP/T
DS7125 - Rev 4
page 22/31
VND5T100AJ-E
PowerSSO-12 thermal data
Table 15. Thermal parameters
DS7125 - Rev 4
Area/island (cm2)
Footprint
R1 = R7 (°C/W)
0.8
R2 = R8 (°C/W)
1.5
R3 (°C/W)
3
R4 (°C/W)
2
8
8
8
7
R5 (°C/W)
22
15
10
R6 (°C/W)
26
20
15
C1 = C7 (W.s/°C)
0.0008
C2 = C8 (W.s/°C)
0.005
C3 (W.s/°C)
0.05
C4 (W.s/°C)
0.2
0.1
0.1
C5 (W.s/°C)
0.27
0.8
1
C6 (W.s/°C)
3
6
9
page 23/31
VND5T100AJ-E
Package information
6
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
6.1
PowerSSO-12 package information
Figure 30. PowerSSO-12 package dimensions
DS7125 - Rev 4
page 24/31
VND5T100AJ-E
PowerSSO-12 package information
Table 16. PowerSSO-12 mechanical data
Symbol
Millimeters
Min.
Typ.
Max.
θ
0°
θ1
0°
θ2
5°
15°
θ3
5°
15°
A
1.25
1.70
A1
0.00
0.10
A2
1.10
1.60
b
0.23
0.41
b1
0.20
c
0.19
c1
0.19
D
8°
0.25
0.39
0.25
0.20
0.23
4.90 BSC
D2
3.60
D3
2.90
4.20
e
0.80 BSC
E
6.00 BSC
E1
3.90 BSC
E2
1.90
2.50
E3
1.20
h
0.25
0.50
L
0.40
1.27
L1
1.00 REF
N
12
R
0.07
R1
0.07
S
0.20
Table 17. PowerSSO-12 tolerance of form and position
DS7125 - Rev 4
Symbol
Millimeters
aaa
0.10
bbb
0.10
ccc
0.10
ddd
0.08
eee
0.10
fff
0.10
ggg
0.15
page 25/31
VND5T100AJ-E
PowerSSO-12 packing information
6.2
PowerSSO-12 packing information
Figure 31. PowerSSO-12 tube shipment (no suffix)
All dimensions are in mm.
B
C
A
GAPGCFT000123
Figure 32. PowerSSO-12 tape and reel shipment (suffix “TR”)
Reel dimensions
Tape dimensions
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
DS7125 - Rev 4
page 26/31
VND5T100AJ-E
Revision history
Table 18. Document revision history
Date
Revision
Changes
08-Mar-2011
1
Initial release.
25-Sep-2013
2
Disclaimer updated.
Table 4: Thermal data:
22-Mar-2016
3
– Rthj-case: updated value
Updated Section 5.1: PowerSSO-12 mechanical data.
Updated PowerSSO-12 cover image and Device summary on cover page.
Updated Table 5. Power section.
Added notes in Table 12. Electrical transient requirements (part 1)
21-Jun-2022
4
Updated Figure 24. Application schematic.
Moved Section 3.4: Maximum demagnetization energy (VCC = 24 V) to Section 4 Maximum
demagnetization energy (VCC = 24 V)
Updated Section 6.1 PowerSSO-12 package information.
Minor text changes.
DS7125 - Rev 4
page 27/31
VND5T100AJ-E
Contents
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical specification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
2.1
Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
3.1
GND protection network against reverse battery. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1.1
Solution 1: resistor in the ground line (RGND only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1.2
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.3
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4
Maximum demagnetization energy (VCC = 24 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
5
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
5.1
6
PowerSSO-12 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
6.1
PowerSSO-12 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.2
PowerSSO-12 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
DS7125 - Rev 4
page 28/31
VND5T100AJ-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Suggested connections for unused and not connected pins .
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . .
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching (VCC = 24 V, TJ = 25 °C). . . . . . . . . . . . . . . . . .
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protections and diagnostics. . . . . . . . . . . . . . . . . . . . . . .
Current sense (8 V < VCC < 36 V) . . . . . . . . . . . . . . . . . .
Openload detection (VFR_Stby = 5 V). . . . . . . . . . . . . . . . .
Truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical transient requirements (part 1) . . . . . . . . . . . . . .
Electrical transient requirements (part 2) . . . . . . . . . . . . . .
Electrical transient requirements (part 3) . . . . . . . . . . . . . .
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PowerSSO-12 mechanical data . . . . . . . . . . . . . . . . . . . .
PowerSSO-12 tolerance of form and position . . . . . . . . . .
Document revision history . . . . . . . . . . . . . . . . . . . . . . . .
DS7125 - Rev 4
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23
25
25
27
page 29/31
VND5T100AJ-E
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
DS7125 - Rev 4
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Configuration diagram PowerSSO-12 (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current and voltage conventions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
treset definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tstby definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Openload off-state delay timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output stuck to VCC detection delay time at FR_Stby activation . . . . . . . . . . . . . . . . . . . .
Delay response time between rising edge of ouput current and rising edge of current sense .
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device behavior in overload condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low level input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High level input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On-state resistance vs TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On-state resistance vs VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ILIMH vs TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum turn off current versus inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PowerSSO-12 PCB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RthJA vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . . . . .
PowerSSO-12 thermal impedance junction ambient single pulse (one channel ON). . . . . . .
Thermal fitting model of a double channel HSD in PowerSSO-12 . . . . . . . . . . . . . . . . . . .
PowerSSO-12 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PowerSSO-12 tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PowerSSO-12 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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page 30/31
VND5T100AJ-E
IMPORTANT NOTICE – READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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© 2022 STMicroelectronics – All rights reserved
DS7125 - Rev 4
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