VND600TR-E

VND600-E DOUBLE CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package Type RDS(on) Ilim VCC VND600-E 35 mΩ 25 A 36 V ■ ) s ( ct DC SHORT CIRCUIT CURRENT: 25 A u d o CMOS COMPATIBLE INPUTS PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE AND OVERVOLTAGE n SHUT-DOWN ■ OVERVOLTAGE CLAMP ■ THERMAL SHUT DOWN ■ CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ PROTECTION AGAINST: n LOSS OF GROUND AND LOSS OF VCC ■ REVERSE BATTERY PROTECTION (*) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE ■ ■ r P e t e l o bs SO-16L O ) s ( t c u d o Pr DESCRIPTION The VND600-E is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). e t e ol This device has two channels in high side configuration; each channel has an analog sense output on which the sensing current is proportional (according to a known ratio) to the corresponding load current. Built-in thermal shut-down and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection. s b O Table 2. Order Codes Package SO-16L Tube VND600-E Tape and Reel VND600TR-E Note: (*) See application schematic at page 9 Rev. 1 October 2004 1/18 VND600-E Figure 2. Block Diagram VCC OVERVOLTAGE VCC CLAMP UNDERVOLTAGE PwCLAMP 1 DRIVER 1 OUTPUT 1 ILIM1 INPUT 1 Vdslim1 LOGIC IOUT1 INPUT 2 CURRENT SENSE 1 PwCLAMP 2 u d o DRIVER 2 GND Ot1 OVERTEMP. 2 OUTPUT 2 ILIM2 OVERTEMP. 1 r P e Vdslim2 IOUT2 Ot2 ) s ( ct Ot1 K Ot2 K CURRENT SENSE 2 t e l o Table 3. Absolute Maximum Ratings Symbol )- s ( t c Value Unit 41 V VCC DC supply voltage -VCC Reverse supply voltage -0.3 V - IGND DC reverse ground pin current -200 mA Internally limited A -21 A +/- 10 mA 4000 V 2000 V 5000 V 5000 V (L=0.12mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=40A) 136 mJ Power dissipation at Tc=25°C 8.3 W Internally limited °C u d o IOUT Reverse output current e t e l IIN o s b VESD Pr Output current IR O Parameter s b O Input current Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT - CURRENT SENSE - OUTPUT - VCC Maximum Switching Energy EMAX Ptot Tj Junction operating temperature Tc Case operating temperature -40 to 150 °C Storage temperature -55 to 150 °C TSTG 2/18 VND600-E Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins 1 VCC 16 GND OUTPUT 2 INPUT 2 OUTPUT 2 INPUT 1 C. SENSE 1 OUTPUT 1 OUTPUT 1 OUTPUT 1 C. SENSE 2 8 VCC Connection / Pin Floating 9 Current Sense N.C. X Through 1KΩresistor To Ground VCC OUTPUT 2 N.C. VCC Output X u d o X Through 10KΩ resistor r P e Figure 4. Current and Voltage Conventions INPUT1 )- s ( t c VIN1 t e l o IS s b O VCC IIN1 VF1 (*) VIN2 du e t e l o r P INPUT2 OUTPUT1 CURRENT SENSE 2 GROUND VOUT1 ISENSE1 IOUT2 OUTPUT2 VCC IOUT1 CURRENT SENSE 1 IIN2 ) s ( ct Input X VSENSE1 VOUT2 ISENSE2 VSENSE2 IGND o s b O (*) VFn = VCCn - VOUTn during reverse battery condition Table 4. Thermal Data Symbol Rthj-lead Rthj-amb Parameter Thermal resistance junction-lead Thermal resistance junction-ambient (MAX) (MAX) Value 15 65 (*) 48 (**) Unit °C/W °C/W Note: (*) When mounted on a standard single-sided FR-4 board with 0.5cm 2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow Note: (**) When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow. 3/18 VND600-E ELECTRICAL CHARACTERISTICS (8V