VND810MSPTR-E

VND810MSP-E DOUBLE CHANNEL HIGH SIDE DRIVER Figure 1. Package Table 1. General Features Type RDS(on) Iout VCC VND810MSP-E 150 mΩ (*) 0.6 A (*) 36 V ) s t( (*) Per each channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT c u d ■ ■ REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE ■ ) s ( ct 10 e t e l o s o r P 1 PowerSO-10™ b O - Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The current limitation threshold is aimed at detecting the 21W/12V standard bulb as an overload fault. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. DESCRIPTION The VND810MSP-E is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). u d o r P e t e l o s b O Table 2. Order Codes Package PowerSO-10™ Tube VND810MSP-E Tape and Reel VND810MSPTR-E Note: (**) See application schematic at page 9 Rev. 3 September 2013 1/20 VND810MSP-E Figure 2. Block Diagram Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE CLAMP 1 GND OUTPUT1 INPUT1 DRIVER 1 CLAMP 2 STATUS1 CURRENT LIMITER 1 ) s t( DRIVER 2 LOGIC OUTPUT2 OVERTEMP. 1 OPENLOAD ON 1 c u d CURRENT LIMITER 2 INPUT2 OPENLOAD OFF 1 OPENLOAD ON 2 STATUS2 o r P OPENLOAD OFF 2 e t le OVERTEMP. 2 O ) Table 3. Absolute Maximum Ratings Symbol VCC s ( t c DC Supply Voltage Value Unit 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA Internally Limited A -6 A DC Input Current +/- 10 mA DC Status Current +/- 10 mA 4000 V 4000 V 5000 V 5000 V (L=400mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=0.9A) 225 mJ Power Dissipation TC=25°C 52 W Internally Limited °C IOUT - IOUT u d o Istat o s b VESD Pr DC Output Current Reverse DC Output Current e t e l IIN O Parameter o s b Electrostatic Discharge R=1.5KΩ; C=100pF) (Human Body Model: - INPUT - STATUS - OUTPUT - VCC Maximum Switching Energy EMAX Ptot Tj Junction Operating Temperature Tc Case Operating Temperature - 40 to 150 °C Storage Temperature - 55 to 150 °C Tstg 2/20 VND810MSP-E Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins GROUND INPUT 1 STATUS 1 STATUS 2 INPUT 2 6 7 8 9 5 4 3 10 1 OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2 2 11 VCC Connection / Pin Status Floating X To Ground N.C. X X Output X Input X Through 10KΩ resistor c u d e t le Figure 4. Current and Voltage Conventions o s b IIN1 -O ) s ( ct ISTAT1 VIN1 o r P IS VF1 (*) VCC VCC INPUT 1 ) s t( STATUS 1 VSTAT1 du ro P e IOUT1 IIN2 OUTPUT 1 INPUT 2 VIN2 ISTAT2 STATUS 2 VSTAT2 IOUT2 GND t e l o VOUT1 OUTPUT 2 VOUT2 IGND s b O (*) VFn = VCCn - VOUTn during reverse battery condition Table 4. Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Value 2.4 52.4 (1) 37 (2) Unit °C/W °C/W Note: 1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow. Note: 2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow. 3/20 VND810MSP-E ELECTRICAL CHARACTERISTICS (8V VOL tSDL L H b O - VND810MSP-E Figure 6. Switching Time Waveforms VOUTn 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% ) s t( t VINn td(on) c u d td(off) e t le o r P so b O - t Table 13. Electrical Transient Requirements On VCC Pin ISO T/R 7637/1 Test Pulse I 1 2 3a 3b 4 5 -25 V +25 V -25 V +25 V -4 V +26.5 V r P e t e l o s b O ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E u d o ) s ( ct I C C C C C C II TEST LEVELS III IV -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V -100 V +100 V -150 V +100 V -7 V +86.5 V TEST LEVELS RESULTS II III C C C C C C C C C C E E Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. 7/20 VND810MSP-E Figure 7. Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn ) s t( UNDERVOLTAGE VCC VUSDhyst c u d VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined e t le OVERVOLTAGE o s b VCC>VOV VCCVOL VOL OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj TTSD TR INPUTn OUTPUT CURRENTn STATUSn 8/20 o r P VND810MSP-E Figure 8. Application Schematic +5V +5V +5V VCC Rprot STATUS1 Dld µC Rprot INPUT1 OUTPUT1 Rprot Rprot STATUS2 ) s t( c u d INPUT2 o r P OUTPUT2 GND e t le RGND VGND DGND o s b GND PROTECTION REVERSE BATTERY NETWORK ) s ( ct Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC