VND810SPTR-E

VND810SP-E DOUBLE CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VND810SP-E Figure 1. Package RDS(on) Iout VCC 160 mΩ (*) 3.5 A (*) 36 V (*) Per each channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT ■ ■ 10 1 PowerSO-10™ REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE ■ DESCRIPTION The VND810SP-E is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. Table 2. Order Codes Package PowerSO-10™ Tube VND810SP-E Tape and Reel VND810SPTR-E Note: (**) See application schematic at page 9 Rev. 1 October 2004 1/20 VND810SP-E Figure 2. Block Diagram Vcc Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE GND CLAMP 1 OUTPUT1 INPUT1 DRIVER 1 CLAMP 2 STATUS1 CURRENT LIMITER 1 OVERTEMP. 1 DRIVER 2 LOGIC OUTPUT2 OPENLOAD ON 1 CURRENT LIMITER 2 INPUT2 OPENLOAD OFF 1 OPENLOAD ON 2 STATUS2 OPENLOAD OFF 2 OVERTEMP. 2 Table 3. Absolute Maximum Ratings Symbol VCC Parameter DC Supply Voltage Value Unit 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA Internally Limited A -6 A IOUT - IOUT DC Output Current Reverse DC Output Current IIN DC Input Current +/- 10 mA Istat DC Status Current +/- 10 mA 4000 V 4000 V 5000 V 5000 V (L=1.4mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=5A) 24 mJ Power Dissipation TC=25°C 52 W Internally Limited °C Electrostatic Discharge R=1.5KΩ; C=100pF) (Human Body Model: - INPUT VESD - STATUS - OUTPUT - VCC Maximum Switching Energy EMAX Ptot Tj Junction Operating Temperature Tc Case Operating Temperature - 40 to 150 °C Storage Temperature - 55 to 150 °C Tstg 2/20 VND810SP-E Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins GROUND INPUT 1 STATUS 1 STATUS 2 INPUT 2 6 7 8 9 5 4 3 10 1 OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2 2 11 VCC Connection / Pin Status Floating X To Ground N.C. X X Output X Input X Through 10KΩ resistor Figure 4. Current and Voltage Conventions IS VF1 (*) IIN1 IOUT1 ISTAT1 VIN1 OUTPUT 1 STATUS 1 VSTAT1 VCC VCC INPUT 1 VOUT1 IIN2 INPUT 2 IOUT2 VIN2 ISTAT2 OUTPUT 2 STATUS 2 VSTAT2 VOUT2 GND IGND (*) VFn = VCCn - VOUTn during reverse battery condition Table 4. Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Value 2.4 52.4 (1) 37 (2) Unit °C/W °C/W Note: 1. When mounted on a standard single-sided FR-4 board with 0.5 cm 2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow. Note: 2. When mounted on a standard single-sided FR-4 board with 6 cm 2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow 3/20 VND810SP-E ELECTRICAL CHARACTERISTICS (8VTTSD 3.5 5 5.5V TTSD VINn VINn VSTAT n VSTAT n tSDL tDOL(off) tSDL tDOL(on) Table 12. Truth Table CONDITIONS INPUT OUTPUT SENSE Normal Operation L H L H H H Current Limitation L H H L X X H (Tj < TTSD) H (Tj > TTSD) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output Voltage > VOL L H H H L H Output Current < IOL L H L H H L 6/20 VND810SP-E Figure 6. Switching Time Waveforms VOUTn 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% t VINn td(on) td(off) t Table 13. Electrical Transient Requirements On V CC Pin ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I II TEST LEVELS III -25 V +25 V -25 V +25 V -4 V +26.5 V -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V I C C C C C C TEST LEVELS RESULTS II III C C C C C C C C C C E E IV -100 V +100 V -150 V +100 V -7 V +86.5 V Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. 7/20 VND810SP-E Figure 7. Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC VUSDhyst VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined OVERVOLTAGE VCCVOV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn VOUT>VOL OUTPUT VOLTAGEn VOL STATUSn OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj TTSD TR INPUTn OUTPUT CURRENTn STATUSn 8/20 VND810SP-E Figure 8. Application Schematic +5V +5V +5V VCC Rprot STATUS1 Dld µC Rprot INPUT1 OUTPUT1 Rprot STATUS2 Rprot INPUT2 OUTPUT2 GND RGND VGND GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC