VND830-E

VND830-E DOUBLE CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VND830-E (*) Per each channel Figure 1. Package Iout 6A (*) VCC 36V RDS(on) 60mΩ (*) CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ LOSS OF GROUND PROTECTION ■ VERY LOW STAND-BY CURRENT ■ ■ SO-16L REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE ■ DESCRIPTION The VND830-E is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V CC pin voltage clamp protects the devices against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both is on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. Table 2. Order Codes Package Tube VND830-E Tape and Reel VND830TR-E SO-16L Note: (*) See application schematic at page 9 Rev. 3 February 2005 1/20 VND830-E Figure 2. Block Diagram VCC VCC CLAMP OVERVOLTAGE UNDERVOLTAGE GND INPUT1 STATUS1 CLAMP 1 OUTPUT1 DRIVER 1 CLAMP 2 CURRENT LIMITER 1 LOGIC OVERTEMP. 1 OPENLOAD ON 1 CURRENT LIMITER 2 DRIVER 2 OUTPUT2 INPUT2 OPENLOAD OFF 1 STATUS2 OPENLOAD OFF 2 OVERTEMP. 2 OPENLOAD ON 2 Table 3. Absolute Maximum Ratings Symbol VCC - VCC - IGND IOUT - IOUT IIN ISTAT DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human R=1.5KΩ; C=100pF) VESD - INPUT - STATUS - OUTPUT - VCC Maximum Switching Energy EMAX Ptot Tj Tc Tstg (L=1.8mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=9A) Power Dissipation Tlead=25°C Junction Operating Temperature Case Operating Temperature Storage Temperature 102 8.3 Internally Limited - 40 to 150 - 55 to 150 mJ W °C °C °C Body Model: 4000 4000 5000 5000 V V V V Parameter Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA 2/20 VND830-E Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins VCC N.C. GND INPUT 1 STATUS 1 STATUS 2 INPUT 2 VCC 1 16 VCC OUTPUT 1 OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2 OUTPUT 2 8 9 VCC Connection / Pin Status Floating X To Ground N.C. X X Output X Input X Through 10KΩ resistor Figure 4. Current and Voltage Conventions IS IIN1 INPUT 1 VIN1 VSTAT1 VIN2 ISTAT1 STATUS 1 IIN2 INPUT 2 ISTAT2 STATUS 2 VSTAT2 GND IGND OUTPUT 2 IOUT2 VOUT2 OUTPUT 1 VOUT1 VCC IOUT1 VF1 (*) VCC (*) VFn = VCCn - VOUTn during reverse battery condition Table 4. Thermal Data Symbol Rthj-lead Rthj-amb Parameter Thermal resistance junction-lead Thermal resistance junction-ambient (MAX) (MAX) Value 15 65 (*) 48 (**) Unit °C/W °C/W Note: (*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. Note: (**) When mounted on a standard single-sided FR-4 board with 6 cm 2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. 3/20 VND830-E ELECTRICAL CHARACTERISTICS (8V TTSD) L H L X X H H L H H L Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL Figure 5. Switching time Waveforms VOUTn 90% 80% dVOUT/dt(on) dVOUT/dt(off) 10% t VINn td(on) td(off) t 6/20 VND830-E Table 13. Electrical Transient Requirements On V CC Pin ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I -25 V +25 V -25 V +25 V -4 V +26.5 V II -50 V +50 V -50 V +50 V -5 V +46.5 V TEST LEVELS III -75 V +75 V -100 V +75 V -6 V +66.5 V TEST LEVELS RESULTS II III C C C C C C C C C C E E IV -100 V +100 V -150 V +100 V -7 V +86.5 V Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω I C C C C C C IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. 7/20 VND830-E Figure 6. Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined VUSDhyst OVERVOLTAGE VCCVOL VOL OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn TTSD TR 8/20 VND830-E Figure 7. Application Schematic +5V +5V +5V VCC Rprot STATUS1 Dld µC Rprot INPUT1 OUTPUT1 Rprot STATUS2 Rprot INPUT2 GND OUTPUT2 RGND VGND DGND GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (− VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the of the device’s datasheet. Power Dissipation in RGND (when VCC