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VND830ASP13TR

VND830ASP13TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    POWERSO-10_7.5X9.4MM-EP

  • 描述:

    IC PWR DRIVER N-CHAN 1:1 PWRSO10

  • 数据手册
  • 价格&库存
VND830ASP13TR 数据手册
VND830ASP ® DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VND830ASP RDS(on) 60 mΩ (*) IOUT 6 A (*) VCC 36 V (*) (*) Per channel ) s ( ct 10 DC SHORT CIRCUIT CURRENT: 6A ■ CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE AND OVERVOLTAGE SHUT-DOWN ■ OVERVOLTAGE CLAMP ■ THERMAL SHUT-DOWN ■ CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ PROTECTION AGAINST: LOSS OF GROUND AND LOSS OF VCC ■ REVERSE BATTERY PROTECTION (**) ■ ) (s DESCRIPTION The VND830ASP is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving any kind of load with one t c u BLOCK DIAGRAM d o r 1 PowerSO-10™ s b O Pr PACKAGE TUBE T&R PowerSO-10™ VND830ASP VND830ASP13TR e t e ol side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device has two channels in high side configuration; each channel has an analog sense output on which the sensing current is proportional (according to a known ratio) to the corresponding load current. Built-in thermal shut-down and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection. s b O P e t e l o u d o ORDER CODES VCC OVERVOLTAGE VCC CLAMP UNDERVOLTAGE PwCLAMP 1 DRIVER 1 OUTPUT 1 ILIM1 INPUT 1 Vdslim1 LOGIC IOUT1 INPUT 2 Ot1 CURRENT SENSE 1 K PwCLAMP 2 DRIVER 2 GND Ot1 OVERTEMP. 1 OVERTEMP. 2 Vdslim2 Ot2 OUTPUT 2 ILIM2 IOUT2 K Ot2 CURRENT SENSE 2 (**) See application schematic at page 8 September 2013 DocID9696 Rev 3 1/17 VND830ASP ABSOLUTE MAXIMUM RATING Symbol VCC -VCC -IGND IOUT IR IIN VCSENSE Parameter DC Supply Voltage Reverse Supply Voltage DC Reverse Ground Pin Current Output Current Reverse Output Current Input Current Current Sense Maximum Voltage Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 -3 Unit V V mA A A mA V +15 V ) s ( ct Electrostatic Discharge (Human Body Model: R=1.5Ω; C=100pF) VESD - INPUT 4000 - CURRENT SENSE 2000 u d o - OUTPUT EMAX Ptot Tj Tc Tstg 5000 - VCC Maximum Switching Energy (L=1.8mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=9A) Power Dissipation at TC=25°C Junction Operating Temperature Case Operating Temperature Storage Temperature o s b O ) CONNECTION DIAGRAM (TOP VIEW) GROUND INPUT2 INPUT1 C.SENSE1 C.SENSE2 s ( t c u d o e t e ol Pr OUTPUT 2 OUTPUT 2 N.C. OUTPUT 1 OUTPUT 1 5 4 3 6 7 8 9 2 10 1 11 VCC CURRENT AND VOLTAGE CONVENTIONS s b O IS VCC IIN1 INPUT1 VIN1 OUTPUT1 VIN2 IOUT2 INPUT2 VOUT1 ISENSE1 CURRENT SENSE 1 IIN2 OUTPUT2 CURRENT SENSE 2 GROUND IGND 2/17 VCC IOUT1 VSENSE1 VOUT2 ISENSE2 VSENSE2 V V 5000 V 100 mJ 74 Internally Limited - 40 to 150 - 55 to 150 W °C °C °C r P e let V VND830ASP THERMAL DATA Symbol Rthj-case Parameter Thermal Resistance Junction-case Value 1.2 Unit °C/W Rthj-amb Thermal Resistance Junction-ambient 51.2 (*) °C/W (*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air flow ELECTRICAL CHARACTERISTICS (8V
VND830ASP13TR 价格&库存

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