VND920-E
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
Table 1. General Features
Type
VND920-E
Figure 1. Package
RDS(on)
IOUT
VCC
16mΩ
35 A (*)
36 V
)
s
(
ct
(*) Per channel with all the output pins connected to the PCB.
CMOS COMPATIBLE INPUT
■ PROPORTIONAL LOAD CURRENT SENSE
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ OVERVOLTAGE CLAMP
■ THERMAL SHUTDOWN
■ CURRENT LIMITATION
■ PROTECTION AGAINST LOSS OF GROUND
AND LOSS OF VCC
■
■
)
(s
VERY LOW STAND-BY POWER DISSIPATION
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SO-28 (DOUBLE ISLAND)
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Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. Built-in analog current sense
output delivers a current proportional to the load
current. Device automatically turns off in case of
ground pin disconnection.
REVERSE BATTERY PROTECTION (**)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
■
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DESCRIPTION
The VND920-E is a double chip device made by
using
STMicroelectronics
VIPower
M0-3
Technology, intended for driving any kind of load
with one side connected to ground. Active VCC pin
voltage clamp protects the device against low
energy
spikes
(see
ISO7637
transient
compatibility table).
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Table 2. Order Codes
Package
PowerSO-10
Tube
VND920-E
Tape and Reel
VND920TR-E
Note: (**) See application schematic at page 9.
Rev. 1
October 2004
1/19
VND920-E
Figure 2. Block Diagram
VCC 1
OVERVOLTAGE
DETECTION
VCC
CLAMP
UNDERVOLTAGE
DETECTION
GND 1
)
s
(
ct
Power CLAMP
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DRIVER
LOGIC
INPUT 1
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CURRENT LIMITER
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OUTPUT 1
VDS LIMITER
IOUT
OVERTEMPERATURE
DETECTION
)
(s
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P
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VCC
CLAMP
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OVERVOLTAGE
DETECTION
UNDERVOLTAGE
DETECTION
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INPUT 2
CURRENT
SENSE 1
VCC 2
GND 2
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K
Power CLAMP
DRIVER
OUTPUT 2
LOGIC
CURRENT LIMITER
VDS LIMITER
IOUT
K
OVERTEMPERATURE
DETECTION
2/19
CURRENT
SENSE 2
VND920-E
Table 3. Absolute Maximum Ratings (Per each channel)
Symbol
VCC
- VCC
- IGND
IOUT
- IOUT
IIN
VCSENSE
Parameter
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
Current Sense Maximum Voltage
Electrostatic Discharge (Human Body Model: R=1.5KΩ;
C=100pF)
VESD
Ptot
Tj
Tc
TSTG
Unit
V
V
mA
A
A
mA
V
+15
V
V
ct
2000
- CURRENT SENSE
5000
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5000
- VCC
Maximum Switching Energy
(L=0.25mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=45A)
Power Dissipation Tl≤25°C
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
)
(s
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Pr
V
V
V
355
mJ
6.25 (See note 1)
Internally limited
- 40 to 150
- 55 to 150
W
°C
°C
°C
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Note: 1. Per island
(s)
4000
- INPUT
- OUTPUT
EMAX
Value
41
- 0.3
- 200
Internally Limited
- 21
+/- 10
-3
Table 4. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
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VCC 1
1
28
GND 1
INPUT 1
CURRENT SENSE 1
NC
NC
VCC 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
VCC 2
GND 2
INPUT 2
CURRENT SENSE 2
NC
NC
VCC 2
VCC1
OUTPUT 1
OUTPUT 1
OUTPUT 1
14
Connection / Pin
Current Sense
Floating
To Ground
Through 1KΩ resistor
15
N.C.
X
X
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
VCC 2
Output
X
Input
X
Through 10KΩ resistor
3/19
VND920-E
Figure 3. Current and Voltage Conventions
IS2
IS1
VCC2
VCC1
VCC1
VF1 (*)
VCC2
IOUT1
IIN1
OUTPUT1
INPUT1
CURRENT SENSE 1
IOUT2
IIN2
OUTPUT2
INPUT2
VIN2
VOUT1
ISENSE1
VIN1
VSENSE1
VOUT2
ISENSE2
CURRENT SENSE 2
GROUND2
GROUND1
VSENSE2
)
s
(
ct
IGND2
IGND1
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(*) VFn = VCCn - VOUTn during reverse battery condition
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Table 5. Thermal Data
Symbol
Rthj-lead
Rthj-amb
Rthj-amb
Parameter
Thermal Resistance Junction-lead
Thermal Resistance Junction-ambient (one chip ON)
Thermal Resistance Junction-ambient (two chips ON)
let
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Value
20
60 (1)
46 (1)
45 (2)
32 (2)
Unit
°C/W
°C/W
°C/W
Note: (1) When mounted on a standard single-sided FR-4 board with 1cm 2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
Note: (2) When mounted on a standard single-sided FR-4 board with 6cm 2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
)
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ELECTRICAL CHARACTERISTICS (8V
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