VND5N07
OMNIFET II
fully autoprotected Power MOSFET
Features
Max. on-state resistance (per ch.)
Current limitation (typ)
Drain-Source clamp voltage
■
Linear current limitation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
RDS (on)
0.2Ω
ILIMH
5A
1
VCLAMP
70V
DPAK
TO-252
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Diagnostic feedback through input pin
■
Esd protection
■
Direct access to the gate of the power mosfet
(analog driving)
■
Compatible with standard Power MOSFET
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Table 1.
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IPAK
TO-251
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Low current drawn from input pin
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ISOWATT200
SOT-82FM
Description
The VND5N07 is a monolithic device designed in
STMicroelectronics VIPower M0 technology,
intended for replacement of standard Power
MOSFETs from DC to 50KHz applications. Built in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Device summary
Order codes
Package
Tube
Tape and reel
DPAK
VND5N07
VND5N0713TR
IPAK
VND5N07-1
ISOWATT220
VNP5N07FI
SOT-82FM
VNK5N07FM
September 2013
Rev 4
1/24
www.st.com
24
Contents
VND5N07
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4
3.1
Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2
Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3
Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 17
3.4
Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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4.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.2
DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3
IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.4
ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.5
SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
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2.1
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
VND5N07
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Source Drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 8
DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
IPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
ISOWATT220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
SOT-82FM mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
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3/24
List of figures
VND5N07
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal impedance for ISOWATT220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal impedance for DPAK / IPAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Source-Drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static Drain-Source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static Drain-Source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Normalized on resistance Vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static Drain-Source on resistance Vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Input voltage Vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off Drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off Drain-Source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized on resistance Vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized Input threshold voltage Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Normalized current limit Vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
IPAK mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
ISOWATT220 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
SOT-82FM mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
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VND5N07
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
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5/24
Electrical specifications
VND5N07
2
Electrical specifications
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2.
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Absolute maximum ratings
Value
Symbol
DPAK / IPAK
VDSn
Drain-Source voltage (VINn = 0V)
VINn
Input voltage
IDn
Drain current
IRn
Reverse DC output current
Ptot
Tj
Operating junction temperature
Tc
Case operating temperature
2.2
V
18
V
Internally limited
A
-7
A
2000
V
24
9
W
Internally limited
°C
Internally limited
°C
-55 to 150
°C
Max. value
Unit
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Thermal data
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Storage temperature
Table 3.
O
60
t(s
Tstg
SOT-82FM
Internally clamped
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Total dissipation at Tc = 25°C
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ISOWATT220
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Electrostatic discharge (R = 1.5KΩ,
C = 100pF)
VESD
Unit
Parameter
Symbol
Thermal data
Parameter
DPAK / IPAK ISOWATT220
SOT-82FM
Rthj-case
Thermal resistance junction-case
3.75
5.2
14
°C/W
Rthj-amb
Thermal resistance junction-ambient
100
62.5
100
°C/W
VND5N07
2.3
Electrical specifications
Electrical characteristics
Tcase = 25°C unless otherwise stated.
Table 4.
Off
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
70
80
V
Drain-Source clamp
voltage
VIN = 0V; ID = 200mA
60
Drain-Source
threshold voltage
VIN = 0V; ID = 2mA
55
IISS
Supply current from
input pin
VDS = 0V; VIN = 10V
VINCL
Input-Source reverse
clamp voltage
IIN = 1mA
IDSS
Zero input voltage
drain current
(VIN=0V)
VDS = 13V; VIN = 0V;
VDS = 25V; VIN = 0V
VCLAMP
VCLTH
Table 5.
RDS(on)
Static Drain-Source
on resistance
VIN(th)
Input threshold
voltage
bs
Test conditions
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Parameter
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250
-1.0
On(1)
Symbol
V
-O
Min.
Typ.
VIN =10V; ID = 2.5A;
VIN = 5V; ID = 2.5A
VDS = Vin; ID + Iin = 1 mA
0.8
500
µA
-0.3
V
50
200
µA
µA
Max.
Unit
200
280
mΩ
3
V
Max.
Unit
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1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
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Table 6.
let
Symbol
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Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 13V; ID = 2.5A
COSS
Output capacitance
VDS = 13V; f = 1MHz; VIN = 0V
Min.
Typ.
3
4
200
S
300
pF
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
7/24
Electrical specifications
VND5N07
Table 7.
Switching(1)
Symbol
Parameter
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Test conditions
Typ.
Max.
Unit
50
100
ns
60
100
ns
150
300
ns
Fall time
40
80
ns
Turn-on delay time
150
250
ns
400
600
ns
3900
5000
ns
1100
1600
ns
Turn-on delay time
Rise time
Turn-off delay time
Rise time
Turn-off delay time
VDD = 15V; ID = 2.5A
Vgen = 10V; Rgen = 10Ω
VDD = 15V; ID = 2.5A
Vgen = 10V; Rgen = 1kΩ
Fall time
(dI/dt)on Turn-on current slope
Qi
Min.
Total input charge
VDD = 15V; ID = 2.5A
Vin = 10V; Rgen = 10Ω
Symbol
VSD(1)
trr
(2)
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Source Drain diode
Parameter
Test conditions
Forward On voltage
Reverse recovery time
Qrr (2)
Reverse recovery
charge
IRRM(2)
Reverse recovery
current
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Min.
ISD = 2.5A; dI/dt = 100 A/µs
VDD = 30V;
A/µS
18
Typ.
ISD = 2.5A; VIN = 0V
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1. Parameters guaranteed by design / characterization.
Table 8.
uc
80
VDD = 12V; ID = 2.5A; VIN = 10V
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nC
Max.
Unit
1.6
V
150
ns
0.3
µC
5.7
A
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1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
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2. Parameters guaranteed by design / characterization.
let
Table 9.
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Symbol
Protections (-40°C < Tj < 150°C, unless otherwise specified)
Parameter
Test conditions
Typ.
Max.
Unit
3.5
3.5
5
5
7
7
A
A
15
40
20
60
µS
µS
Drain current limit
VIN = 10V; VDS = 13V
VIN = 5V; VDS = 13V
tdlim (1)
Step response current
limit
VIN = 10V;
VIN = 5V
Tjsh (1)
Overtemperature
shutdown
150
°C
Tjrs(1)
Overtemperature reset
135
°C
Igf(1)
Fault sink current
VIN = 10V; VDS = 13V;
VIN = 5V; VDS = 13V
Eas (1)
Single pulse
avalanche energy
Starting Tj = 25°C; VDD = 20V
VIN = 10V Rgen = 1kΩ; L = 10mH
Ilim
1. Parameters guaranteed by design / characterization.
8/24
Min.
50
20
0.2
mA
mA
J
VND5N07
Electrical specifications
Figure 2.
Switching time test circuit for resistive load
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Figure 3.
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A
I
OMNIFET
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S
330Ω
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Test circuit for diode recovery times
D
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FAST
DIODE
L=100uH
B
B
D
Rgen
Vgen
A
VDD
I
OMNIFET
S
8.5 Ω
9/24
Electrical specifications
Figure 4.
VND5N07
Unclamped inductive load test circuits
RGEN
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VIN
PW
Figure 5.
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Input charge test circuit
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V IN
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GEN
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10/24
ND8003
VND5N07
Electrical specifications
Figure 6.
Unclamped inductive waveforms
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Figure 7.
Switching waveforms
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11/24
Electrical specifications
Figure 8.
VND5N07
Thermal impedance for ISOWATT220
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Figure 9.
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12/24
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Thermal impedance for DPAK / IPAK
VND5N07
2.4
Electrical specifications
Electrical characteristics curves
Figure 10. Source-Drain diode forward
characteristics
Figure 11. Static Drain-Source on
resistance
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Figure 12. Derating curve
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Figure 13. Static Drain-Source on
resistance vs. input voltage
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Figure 14. Normalized on resistance Vs Figure 15. Transconductance
temperature
13/24
Electrical specifications
VND5N07
Figure 16. Static Drain-Source on
resistance Vs. Id
Figure 17. Switching time resistive load
)
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Figure 18. Turn-on current slope
(VIN = 10V)
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Figure 19. Turn-on current slope
(VIN = 5V)
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Figure 20. Input voltage Vs. input
charge
Figure 21. Turn-off Drain Source voltage
slope
VND5N07
Electrical specifications
Figure 22. Turn-off Drain-Source voltage Figure 23. Capacitance variations
slope
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Figure 24. Switching time resistive load Figure 25. Step response current limit
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Figure 26. Output characteristics
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Figure 27. Normalized on resistance Vs.
temperature
15/24
Electrical specifications
VND5N07
Figure 28. Normalized Input threshold
voltage Vs. temperature
Figure 29. Normalized current limit Vs.
junction temperature
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VND5N07
3
Protection features
Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS
flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
3.1
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Overvoltage clamp protection
Internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and energy handling capability. This feature is
mainly important when driving inductive loads.
3.2
Linear current limiter circuit
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Limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter
is active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
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3.3
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Overtemperature and short circuit protection
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These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area ensures
fast, accurate detection of the junction temperature. Overtemperature cutout occurs at
minimum 150 °C. The device is automatically restarted when the chip temperature falls
below 135 °C .
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3.4
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Status feedback
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In the case of an overtemperature fault condition, a Status Feedback is provided through the
Input pin. The internal protection circuit disconnects the input from the gate and connects it
instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by
monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
17/24
Package and packing information
VND5N07
4
Package and packing information
4.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.2
DPAK mechanical data
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Figure 30. DPAK package dimensions
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P 032P
VND5N07
Package and packing information
Table 10.
DPAK mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
B
0.64
0.90
B2
5.20
5.40
C
0.45
0.60
C2
0.48
D
6.00
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0.60
D1
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5.1
E
6.40
E1
4.7
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2.28
G
4.40
H
9.35
L2
L4
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bs
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Package weight
0°
6.60
4.60
10.10
0.8
0.60
R
Pr
6.20
1.00
0.2
8°
Gr. 0.29
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Package and packing information
4.3
VND5N07
IPAK mechanical data
Figure 31. IPAK mechanical data and package outline
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Table 11.
IPAK mechanical data
Symbol
A
uc
od
A1
Pr
A3
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B
B2
Min.
mm
Typ.
Max.
2.2
2.4
0.9
1.1
0.7
1.3
0.64
0.9
5.2
5.4
B3
0.85
B5
0.3
B6
0.95
C
0.45
0.6
C2
0.48
0.6
D
6
6.2
E
6.4
6.6
G
4.4
4.6
H
15.9
16.3
L
9
9.4
L1
0.8
1.2
L2
20/24
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0.8
1
VND5N07
4.4
Package and packing information
ISOWATT220 mechanical data
Figure 32. ISOWATT220 mechanical data and package outline
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Table 12.
ISOWATT220 mechanical data
Symbol
O
Min.
mm
Typ.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
E
0.4
0.7
F
0.75
1
F1
1.15
1.7
F2
1.15
1.7
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
Pr
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D
L2
16
L3
28.6
30.6
L4
9.8
10.6
L6
15.9
16.4
L7
9
9.3
3
3.2
21/24
Package and packing information
4.5
VND5N07
SOT-82FM mechanical data
Figure 33. SOT-82FM mechanical data and package outline
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Table 13.
Symbol
Typ.
Max.
3.05
1.47
1.67
0.40
0.60
b1
1.4
1.6
b2
1.3
1.5
c
0.45
0.6
D
10.5
10.9
e
2.2
2.8
E
7.45
7.75
L
15.5
15.9
L
1 1.95
2.35
Pr
b
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Min.
mm
2.85
A1
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SOT-82FM mechanical data
VND5N07
5
Revision history
Revision history
Table 14. Document revision history
Date
Revision
Changes
9-Sep-2004
1
Initial release.
17-Dec-2007
2
Stylesheet update.
11-Dec-2008
3
Document restructured and reformatted. Added
ECOPACK® packages information.
25-Sep-2013
4
Updated Disclaimer
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VND5N07
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Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
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)
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UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
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WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
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ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
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DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
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