VNP10N06

VNP10N06 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNP10N06 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS(on) I lim 60 V 0.3 Ω 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY STANDARD TO-220 PACKAGE 3 1 2 TO-220 DESCRIPTION The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip n harsh enviroments. BLOCK DIAGRAM September 2013 1/11 VNP10N06 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit V DS Drain-source Voltage (V in = 0) Internally Clamped V V in Input Voltage Internally Clamped V I in Input Current ± 20 mA ID Drain Current Internally Limited A IR Reverse DC Output Current -15 A 4000 V V esd Ptot Tj Tc T stg Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) o Total Dissipation at T c = 25 C 42 Operating Junction Temperature Case Operating Temperature W Internally Limited o C Internally Limited o C -55 to 150 o C Storage Temperature THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V CLAMP Parameter Test Conditions Min. Typ. Max. Unit 50 60 70 V 1.5 V Drain-source Clamp Voltage I D = 200 mA V in = 0 V IL Input Low Level Voltage I D = 100 µA VDS = 16 V VIH Input High Level Voltage R L = 27 Ω V DD = 16 V V DS = 0.5 V 3.2 V INCL Input-Source Reverse Clamp Voltage I in = -1 mA I in = 1 mA -1 8 I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 50 V V DS < 35 V II SS Supply Current from Input Pin V DS = 0 V V -0.3 11 V V 250 100 µA µA 150 300 µA Typ. Max. Unit 0.15 0.3 Ω Typ. Max. Unit 350 500 pF V in = V IL V in = V IL V in = 5 V ON (∗) Symbol Parameter R DS(on) Static Drain-source On Resistance Test Conditions V in = 7 V ID = 1 A Min. T J < 125 o C DYNAMIC Symbol C oss 2/11 Parameter Output Capacitance Test Conditions V DS = 13 V f = 1 MHz V in = 0 Min. VNP10N06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING (∗∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1100 550 200 100 1600 900 400 200 ns ns ns ns 1.8 1.5 2.3 1.8 µs µs µs µs t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 16 V Id = 1 A V gen = 7 V R gen = 10 Ω (see figure 3) t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 16 V Id = 1 A V gen = 7 V R gen = 1000 Ω (see figure 3) 1.2 1 1.6 1.2 Turn-on Current Slope V DD = 16 V V in = 7 V ID = 1 A R gen = 10 Ω 1.5 A/µs Total Input Charge V DD = 12 V ID = 1 A 13 nC (di/dt) on Qi Vin = 7 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions V SD (∗) Forward On Voltage I SD = 1 A t rr (∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1 A di/dt = 100 A/µs V DD = 30 V T j = 25 o C (see test circuit, figure 5) Q rr (∗∗) I RRM (∗∗) Min. V in = V IL Typ. Max. Unit 0.8 1.6 V 125 ns 0.22 µC 3.5 A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit 6 10 15 A 12 20 µs Drain Current Limit V in = 7 V V DS = 13 V t dlim (∗∗) Step Response Current Limit V in = 7 V V DS step from 0 to 13 V T jsh (∗∗) Overtemperature Shutdown 150 o C T jrs (∗∗) Overtemperature Reset 135 o C 250 mJ I lim E as (∗∗) Single Pulse Avalanche Energy o starting T j = 25 C V DD = 24 V V in = 7 V R gen = 1 KΩ L = 10 mH (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization 3/11 VNP10N06 PROTECTION FEATURES During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current (typically 150 µA) flows into the INPUT pin in order to supply the internal circuitry. During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET. In this condition, the Power MOSFET gate is set 4/11 to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. If Tj reaches Tjsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to Tjrs VNP10N06 Thermal Impedance Derating Curve Output Characteristics Static Drain-Source On Resistance vs Input Voltage Static Drain-Source On Resistance Static Drain-Source On Resistance 5/11 VNP10N06 Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope 6/11 VNP10N06 Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Switching Time Resistive Load Switching Time Resistive Load 7/11 VNP10N06 Current Limit vs Junction Temperature Source Drain Diode Voltage vs Junction Temperature 8/11 Step Response Current Limit VNP10N06 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/11 VNP10N06 TO-220 MECHANICAL DATA mm. DIM. MIN. MAX. A 4.40 4.60 b 0.61 0.88 b1 1.15 1.70 c 0.49 0.70 D 15.25 15.75 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Package Weight 10/11 TYP 1.9Gr. (Typ.) VNP10N06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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