VNP49N04-E

VNP49N04 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE VNP49N04 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS(on) I l im 42 V 0.02 W 49 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION The VNP49N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limita- 1 2 3 TO-220 tion and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM March 2004 1/11 VNP49N04 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit V DS Drain-source Voltage (V in = 0) Internally Clamped V V in Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC O utput Current -50 A V esd Electrostatic Discharge (C= 100 pF , R=1.5 KW) 2000 V P to t Total Dissipation at T c = 25 o C 125 W Tj Tc T st g Operating Junction T emperature Case Operating T emperature Internally Limited o C Internally Limited o C -55 to 150 o C Storage Temperature THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol Parameter Test Cond ition s V CLAMP Drain-source Clamp Voltage I D = 200 mA V CL TH Drain-source Clamp Threshold Voltage I D = 2 mA V I NCL Input-Source Reverse Clamp Voltage I in = -1 mA I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 13 V V DS = 25 V V in = 0 V in = 0 I I SS Supply Current from Input Pin V DS = 0 V Vin = 10 V V in = 0 V in = 0 Min. Typ . Max. Un it 36 42 48 V 35 V -1 -0.3 V 50 200 mA mA 250 500 mA Typ . Max. Un it 3 V 0.02 0.025 W W Max. Un it ON (*) Symb ol Parameter Test Cond ition s Min. 0.8 V IN(th) Input Threshold Voltage V DS = Vin ID +I in = 1 mA R DS( on) Static Drain-source On Resistance V i n = 10 V Vi n = 5 V I D = 25 A ID = 25 A DYNAMIC Symb ol g fs (*) C oss 2/11 Parameter Test Cond ition s Forward Transconductance V DS = 13 V I D = 25 A Output Capacitance V DS = 13 V f = 1 MHz Vin = 0 Min. Typ . 25 30 1100 S 1500 pF VNP49N04 ELECTRICAL CHARACTERISTICS (continued) SWITCHING (**) Symb ol Parameter Test Cond ition s t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 15 V V gen = 10 V (see figure 3) Id = 25 A R gen = 10 W t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 15 V V gen = 10 V (see figure 3) Id = 25 A R gen = 1000 W Turn-on Current Slope V DD = 15 V V i n = 10 V Total Input Charge V DD = 15 V (di/dt) on Qi Min. ID = 25 A R gen = 10 W ID = 25 A V i n = 10 V Typ . Max. Un it 200 1300 800 300 300 1800 1200 450 ns ns ns ns 1.3 3.8 12 6.1 1.9 5.2 14 8.5 ms ms ms ms 25 A/ms 100 nC SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s V SD (*) Forward O n Voltage I SD = 25 A t r r (**) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 25 A di/dt = 100 A/ms V DD = 30 V Tj = 25 oC (see test circuit, figure 5) Q r r (**) I RRM (**) Min. Typ . V in = 0 Max. Un it 1.6 V 250 ns 910 nC 7.5 A PROTECTION Symb ol I lim Parameter Test Cond ition s Min. Typ . Max. Un it VDS = 13 V V DS = 13 V 30 30 49 49 68 68 A A 35 90 50 150 ms ms Drain Current Limit V i n = 10 V Vi n = 5 V t dl im (**) Step Response Current Limit V i n = 10 V Vi n = 5 V T jsh (**) Overtemperature Shutdown 150 o C T j rs (**) Overtemperature Reset 135 o C I gf (**) Fault Sink Current V i n = 10 V Vi n = 5 V E as (**) Single Pulse Avalanche Energy starting T j = 25 o C V DD = 20 V V i n = 10 V R gen = 1 KW L = 6 mH 50 20 VDS = 13 V V DS = 13 V 4 mA mA J (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**) Parameters guaranteed by design/characterization 3/11 VNP49N04 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. 4/11 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). VNP49N04 Thermal Impedance Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage Static Drain-Source On Resistance 5/11 VNP49N04 Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Normalized On Resistance vs Temperature 6/11 VNP49N04 Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Switching Time Resistive Load 7/11 VNP49N04 Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/11 VNP49N04 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/11 VNP49N04 TO-220 MECHANICAL DATA mm. DIM. MIN. MAX. A 4.40 4.60 b 0.61 0.88 b1 1.15 1.70 c 0.49 0.70 D 15.25 15.75 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Package Weight 10/11 TYP 1.9Gr. (Typ.) VNP49N04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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