VNN1NV04P-E, VNS1NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Parameter
Symbol
Value
Max on-state resistance (per ch.)
RON
250 m
Current limitation (typ)
ILIMH
1.7 A
VCLAMP
40 V
Drain-source clamp voltage
2
1
2
3
SOT-223
•
Linear current limitation
•
Thermal shutdown
•
Short circuit protection
•
Integrated clamp
•
Low current drawn from input pin
•
Diagnostic feedback through input pin
•
ESD protection
•
Direct access to the gate of the Power
MOSFET (analog driving)
•
Compatible with standard Power MOSFET
SO-8
Description
The VNN1NV04P-E, VNS1NV04P-E are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1.
Device summary
Order codes
Package
Tube
September 2013
Tape and reel
SOT-223
VNN1NV04P-E VNN1NV04PTR-E
SO-8
VNS1NV04P-E VNS1NV04PTR-E
Doc ID 15586 Rev 3
1/28
www.st.com
28
Contents
VNN1NV04P-E, VNS1NV04P-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5
6
2/28
4.1
SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2
SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.2
SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3
SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.4
SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 15586 Rev 3
VNN1NV04P-E, VNS1NV04P-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 15586 Rev 3
3/28
List of figures
VNN1NV04P-E, VNS1NV04P-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
4/28
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SOT-223 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . 17
SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 18
SOT-223 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SO-8 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . 19
SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SOT-223 mechanical data and package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Doc ID 15586 Rev 3
VNN1NV04P-E, VNS1NV04P-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
Control
1
Linear
Current
Limiter
Over
Temperature
3
SOURCE
Figure 2.
Configuration diagram (top view) (a)
SOURCE
1
8
DRAIN
SOURCE
INPUT
DRAIN
DRAIN
SOURCE
4
5
DRAIN
a. For the pins configuration related to SOT-223 see outline at page 1.
Doc ID 15586 Rev 3
5/28
Electrical specifications
2
VNN1NV04P-E, VNS1NV04P-E
Electrical specifications
Figure 3.
Current and voltage conventions
ID
VDS
DRAIN
IIN
RIN
INPUT
SOURCE
VIN
2.1
Absolute maximum ratings
Stress values that exceed those listed in the “Absolute maximum ratings” table can cause
permanent damage to the device. These are stress ratings only, and operation of the device
at these, or any other conditions greater than those, indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality documents.
Table 2.
Absolute maximum ratings
Symbol
Value
SOT-223
SO-8
Unit
VDSn
Drain-source voltage (VINn=0 V)
Internally clamped
V
VINn
Input voltage
Internally clamped
V
IINn
Input current
+/-20
mA
330
Internally limited
A
-3
A
RIN MINn
Minimum input series impedance
IDn
Drain current
IRn
Reverse DC output current
VESD1
Electrostatic discharge (R=1.5 K, C=100 pF)
4000
V
VESD2
Electrostatic discharge on output pins only
(R=330 , C=150 pF)
16500
V
Ptot
Total dissipation at Tc=25 °C
7
8.3
W
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
Tstg
6/28
Parameter
Storage temperature
Doc ID 15586 Rev 3
VNN1NV04P-E, VNS1NV04P-E
2.2
Electrical specifications
Thermal data
Table 3.
Thermal data
Max value
Symbol
Parameter
Unit
SOT-223
Rthj-case
Thermal resistance junction-case
Rthj-lead
Thermal resistance junction-lead
Rthj-amb
SO-8
18
°C/W
15
(1)
Thermal resistance junction-ambient
(1)
70
65
°C/W
°C/W
1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 m thick) connected
to all DRAIN pins
2.3
Electrical characteristics
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
45
55
V
Off (-40 °C
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