VNN3NV04P-E
VNS3NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Datasheet − production data
Features
Type
RDS(on)
Ilim
Vclamp
VNN3NV04P-E
VNS3NV04P-E
120 mΩ
3.5 A
40 V
2
1
2
3
SO-8
SOT-223
■
Linear current limitation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
ESD protection
■
Direct access to the gate of the Power
MOSFET (analog driving)
■
Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
directive
Description
The VNN3NV04P-E, VNS3NV04P-E, are
monolithic devices designed in
STMicroelectronics® VIPower® M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1.
Device summary
Order codes
Package
September 2013
This is information on a product in full production.
Tube
Tape and reel
SOT-223
—
VNN3NV04PTR-E
SO-8
VNS3NV04P-E
VNS3NV04PTR-E
Doc ID 15626 Rev. 5
1/22
www.st.com
1
Contents
VNN3NV04P-E, VNS3NV04P-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1
4
5
2/22
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.1
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3
SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.4
SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Doc ID 15626 Rev. 5
3/22
List of figures
VNN3NV04P-E, VNS3NV04P-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
4/22
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal impedance for SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SOT-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
DRAIN
2
Overvoltage
Clamp
INPUT
1
Gate
Control
Linear
Current
Limiter
Over
Temperature
3
SOURCE
Figure 2.
FC01000
Configuration diagram (top view)
SO-8 Package(1)
SOURCE
1
8
DRAIN
SOURCE
INPUT
DRAIN
DRAIN
SOURCE
4
5
DRAIN
1. For the pins configuration related to SOT-223 see outlines at page 1.
Doc ID 15626 Rev. 5
5/22
Electrical specifications
2
VNN3NV04P-E, VNS3NV04P-E
Electrical specifications
Figure 3.
Current and voltage conventions
ID
VDS
DRAIN
IIN
RIN
INPUT
SOURCE
VIN
2.1
Absolute maximum ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
SOT-223
VDS
Drain-source voltage (VIN = 0 V)
Internally clamped
V
VIN
Input voltage
Internally clamped
V
IIN
Input current
+/-20
mA
220
Ω
Internally limited
A
RIN MIN
Minimum input series impedance
ID
Drain current
IR
Reverse DC output current
-5.5
A
VESD1
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF)
4000
V
VESD2
Electrostatic discharge on output pin only
(R = 330 Ω, C = 150 pF)
16500
V
Ptot
Total dissipation at Tc = 25 °C
7
8.3
W
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
Tstg
6/22
SO-8
Storage temperature
Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
2.2
Electrical specifications
Thermal data
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
SOT-223
Rthj-case
Thermal resistance junction-case max
Rthj-lead
Thermal resistance junction-lead max
Rthj-amb
Thermal resistance junction-ambient max
SO-8
18
°C/W
15
(1)
70
°C/W
(1)
65
°C/W
1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 mm thick) connected
to all DRAIN pins.
2.3
Electrical characteristics
-40°C < Tj < 150°C, unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
VIN = 0 V; ID = 1.5 A
40
45
55
V
VCLTH
Drain-source clamp threshold
VIN = 0 V; ID = 2 mA
voltage
36
VINTH
Input threshold voltage
0.5
Off
VCLAMP
IISS
Drain-source clamp voltage
VDS = VIN; ID = 1 mA
Supply current from input pin VDS = 0 V; VIN = 5 V
IIN = 1 mA
6
IIN = -1 mA
-1.0
V
2.5
V
100
150
µA
6.8
8
V
-0.3
V
VINCL
Input-source clamp voltage
Zero input voltage drain
current (VIN = 0 V)
VDS = 13 V; VIN = 0 V; Tj = 25°C
30
µA
IDSS
VDS = 25 V; VIN = 0 V
75
µA
Static drain-source on
resistance
VIN = 5 V; ID = 1.5 A; Tj = 25°C
120
mΩ
VIN = 5 V; ID = 1.5 A
240
mΩ
On
RDS(on)
Dynamic (Tj=25 °C, unless otherwise specified)
gfs (1)
Forward transconductance
VDD = 13 V; ID = 1.5 A
5.0
S
COSS
Output capacitance
VDS = 13 V; f = 1 MHz; VIN = 0 V
150
pF
Switching (Tj = 25°C, unless otherwise specified)
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
VDD = 15 V; ID = 1.5 A; Vgen = 5 V;
Rgen = RIN MIN = 220 Ω (see Figure 4)
Fall time
Doc ID 15626 Rev. 5
90
300
ns
250
750
ns
450
1350
ns
250
750
ns
7/22
Electrical specifications
Table 4.
Electrical characteristics (continued)
Symbol
td(on)
tr
td(off)
tf
(dI/dt)on
Qi
VNN3NV04P-E, VNS3NV04P-E
Parameter
Test conditions
Min
Turn-on delay time
Rise time
Turn-off delay time
VDD = 15 V; ID = 1.5 A; Vgen = 5 V;
Rgen = 2.2 KΩ (see Figure 4)
Fall time
Typ
Max
Unit
0.45
1.35
µs
2.5
7.5
µs
3.3
10.0
µs
2.0
6.0
µs
Turn-on current slope
VDD = 15 V; ID = 1.5 A; Vgen = 5 V;
Rgen = RIN MIN = 220 Ω
4.7
A/µs
Total input charge
VDD = 12 V; ID = 1.5 A; VIN = 5 V;
Igen = 2.13 mA (see Figure 7)
8.5
nC
0.8
V
107
ns
37
µC
0.7
A
Source drain diode (Tj=25°C, unless otherwise specified)
VSD(1)
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 1.5 A; VIN = 0 V
ISD = 1.5 A; dI/dt = 12 A/µs;
VDD = 30 V; L = 200 µH
(see Figure 5)
Protections (-40°C < Tj < 150°C, unless otherwise specified)
Ilim
Drain current limit
VIN = 5 V; VDS = 13 V
tdlim
Step response current limit
VIN = 5 V; VDS = 13 V
Tjsh
Over temperature shutdown
150
Tjrs
Over temperature reset
135
Igf
Fault sink current
VIN = 5 V; VDS = 13 V; Tj = Tjsh
10
Eas
Single pulse avalanche
energy
starting Tj = 25°C; VDD = 24 V;
VIN = 5 V; Rgen = RIN MIN = 220 Ω;
L = 24 mH (see Figure 6 and
Figure 8)
100
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
8/22
Doc ID 15626 Rev. 5
3.5
5
7
10
175
A
µs
200
°C
°C
15
20
mA
mJ
VNN3NV04P-E, VNS3NV04P-E
3
Protection features
Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
●
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
●
Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold Tjsh.
●
Overtemperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a
typical value being 170°C. The device is automatically restarted when the chip
temperature falls of about 15°C below shutdown temperature.
●
Status feedback: in the case of an overtemperature fault condition (Tj > Tjsh), the device
tries to sink a diagnostic current Igf through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V.
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
Doc ID 15626 Rev. 5
9/22
Protection features
Figure 4.
VNN3NV04P-E, VNS3NV04P-E
Switching time test circuit for resistive load
VD
Rgen
ID
Vgen
90%
tr
tf
10%
t
td(on)
Vgen
td(off)
t
Figure 5.
Test circuit for diode recovery times
A
A
D
I
FAST
DIODE
OMNIFET
S
L=100uH
B
B
220Ω
D
Rgen
VDD
I
Vgen
OMNIFET
S
8.5 Ω
10/22
Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
Protection features
Figure 6.
Unclamped inductive load test
circuits
Figure 8.
Unclamped inductive waveforms
VIN
Figure 7.
Input charge test circuit
GEN
ND8003
Doc ID 15626 Rev. 5
11/22
Protection features
VNN3NV04P-E, VNS3NV04P-E
3.1
Electrical characteristics curves
Figure 9.
Thermal impedance for SOT-223
Figure 10. Derating curve
Figure 11.
Transconductance
Figure 12. Static drain-source on resistance
vs input voltage (part 1/2)
Gfs (S)
Rds(on) (mohms)
11
300
10
275
Vds=13V
Tj=-40ºC
9
250
Tj=25ºC
8
Tj=150ºC
225
Tj=150ºC
7
200
175
6
Id=3.5A
Id=1A
150
5
Tj=25ºC
125
4
100
3
Tj=-40ºC
75
Id=3.5A
Id=1A
50
Id=3.5A
Id=1A
2
1
25
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
3
3.5
4
4.5
Id (A)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2)
5.5
6
6.5
Figure 14. Source-drain diode forward
characteristics
Rds(on) (mohms)
Vsd (mV)
250
1100
1050
225
Vin=0V
Id=1.5A
200
1000
175
950
Tj=150ºC
150
900
125
850
100
800
75
750
Tj=25ºC
50
700
Tj=-40ºC
25
650
0
600
3
3.5
4
4.5
5
5.5
6
6.5
Vin(V)
12/22
5
Vin(V)
0
1
2
3
4
5
6
Id (A)
Doc ID 15626 Rev. 5
7
8
9
10
11
12
VNN3NV04P-E, VNS3NV04P-E
Protection features
Figure 15. Static drain source on resistance
Rds(on) (ohms)
Figure 16. Turn-on current slope (part 1/2)
di/dt(A/us)
4.5
5
Tj=-40ºC
4
4.5
Vin=2.5V
Vin=5V
Vdd=15V
Id=1.5A
4
3.5
3.5
3
3
2.5
2.5
2
2
1.5
1.5
Tj=25ºC
1
1
Tj=150ºC
0.5
0.5
0
0
0
0
0.05
0.1
0.15
0.2
0.25
500
250
750 1000 1250 1500 1750 2000 2250 2500
0.3
Rg(ohm)
Id(A)
Figure 17. Turn-on current slope (part 2/2)
Figure 18. Transfer characteristics
di/dt(A/usec)
Idon(A)
1.75
2.25
Tj=25ºC
1.5
2
Vds=13.5V
Vin=3.5V
Vdd=15V
Id=1.5A
1.25
1.75
1.5
1
1.25
1
0.75
Tj=150ºC
Tj=-40ºC
0.75
0.5
0.5
0.25
0.25
0
0
0
250
1.5
750 1000 1250 1500 1750 2000 2250 2500
500
2
1.75
2.5
2.25
3
2.75
Rg(ohm)
3.5
3.25
4
3.75
4.5
4.25
5
4.75
Vin(V)
Figure 19. Static drain-source on resistance
vs Id
Figure 20. Input voltage vs input charge
Rds(on) (mohms)
Vin (V)
250
6
225
Vin=5V
5
200
Tj=150ºC
Vds=12V
Id=0.5A
175
4
150
3
125
Tj=25ºC
100
2
75
50
1
Tj= - 40ºC
25
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1
2
3
4
5
6
Qg (nC)
Id (A)
Doc ID 15626 Rev. 5
13/22
Protection features
VNN3NV04P-E, VNS3NV04P-E
Figure 21. Turn-off drain source voltage slope Figure 22. Turn-off drain source voltage slope
(part 1/2)
(part 2/2)
dv/dt(V/usec)
dv/dt(V/usec)
300
300
275
275
250
225
Vin=3.5V
Vdd=15V
Id=1.5A
250
Vin=5V
Vdd=15V
Id=1.5A
225
200
200
175
175
150
150
125
125
100
100
75
75
50
50
25
25
0
0
0
500
250
1000
1500
750
1250
2000
1750
2500
0
2250
500
250
1000
750
1500
1250
Rg(ohm)
2000
1750
2500
2250
Rg(ohm)
Figure 23. Capacitance variations
Figure 24. Output characteristics
Id (A)
C(pF)
5
350
Vin=5V
4.5
Vin=4V
300
4
f=1MHz
Vin=0V
3.5
Vin=3V
250
3
2.5
200
2
150
1.5
1
100
0.5
50
0
0
5
10
15
20
25
30
35
0
1
2
3
4
5
Vds(V)
6
7
8
9
Figure 25. Normalized on resistance vs
temperature
Figure 26. Switching time resistive load
(part 1/2)
v
Rds(on) (mOhm)
t(usec)
4
4
3.5
3.5
Vin=5V
Id=1.5A
3
td(off)
Vdd=15V
Id=1.5A
Vin=5V
3
tr
2.5
2.5
2
tf
2
1.5
1
1.5
td(on)
0.5
1
0
0
0.5
-25
0
25
50
75
100
125
150
175
Tc )ºC)
14/22
500
250
-50
10
Vds (V)
Doc ID 15626 Rev. 5
1000
750
1500
1250
Rg(ohm)
2000
1750
2500
2250
VNN3NV04P-E, VNS3NV04P-E
Protection features
Figure 27. Switching time resistive load
(part 2/2)
Figure 28. Normalized input threshold voltage
vs temperature
Vinth (V)
t(nsec)
2
900
1.8
800
tr
Vdd=15V
Id=1.5A
Rg=220ohm
700
Vds=Vin
Id=1mA
1.6
1.4
600
1.2
500
1
400
0.8
td(off)
300
0.6
tf
200
0.4
td(on)
100
0.2
0
0
3.25
3.5
3.75
4
4.25
4.5
4.75
5
-50
5.25
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Vin(V)
Figure 29. Normalized current limit vs junction Figure 30. Step response current limit
temperature
Ilim (A)
10
Tdlim(usec)
13
9
12.5
Vin=5V
Vds=13V
8
Vin=5V
Rg=220ohm
12
7
11.5
11
6
10.5
5
10
4
9.5
3
9
2
8.5
8
1
7.5
0
5
-50
-25
0
25
50
75
100
125
150
175
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
Vdd(V)
Tc (ºC)
Doc ID 15626 Rev. 5
15/22
Package and packing information
4
VNN3NV04P-E, VNS3NV04P-E
Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
SOT-223 mechanical data
Table 5.
SOT-223 mechanical data
Millimeters
Symbol
Min.
Typ.
Max.
A
1.8
B
0.6
0.7
0.85
B1
2.9
3
3.15
c
0.24
0.26
0.35
D
6.3
6.5
6.7
e
2.3
e1
4.6
E
3.3
3.5
3.7
H
6.7
7
7.3
V
A1
10 (max)
0.02
0.1
Figure 31. SOT-223 package dimensions
0046067
16/22
Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
4.2
Package and packing information
SO-8 mechanical data
Table 6.
SO-8 mechanical data
Millimeters
Symbol
Min
Typ
A
a1
Max
1.75
0.1
0.25
a2
1.65
a3
0.65
0.85
b
0.35
0.48
A
1.75
A1
0.10
A2
1.25
b
0.28
0.48
c
0.17
0.23
D(1)
4.80
4.90
5.00
E
5.80
6.00
6.20
E1(2)
3.80
3.90
4.00
e
0.25
1.27
h
0.25
0.50
L
0.40
1.27
L1
k
1.04
0°
ccc
8°
0.10
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
Doc ID 15626 Rev. 5
17/22
Package and packing information
VNN3NV04P-E, VNS3NV04P-E
Figure 32. SO-8 package dimensions
0016023 D
18/22
Doc ID 15626 Rev. 5
VNN3NV04P-E, VNS3NV04P-E
4.3
Package and packing information
SOT-223 packing information
Figure 33. SOT-223 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
12.4
60
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
12
4
8
1.5
1.5
5.5
4.5
2
All dimensions are in mm.
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
Doc ID 15626 Rev. 5
19/22
Package and packing information
4.4
VNN3NV04P-E, VNS3NV04P-E
SO-8 packing information
Figure 34. SO-8 tube shipment (no suffix)
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
A
100
2000
532
3.2
6
0.6
All dimensions are in mm.
Figure 35. SO-8 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
12
4
8
1.5
1.5
5.5
4.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
20/22
Doc ID 15626 Rev. 5
500mm min
VNN3NV04P-E, VNS3NV04P-E
5
Revision history
Revision history
Table 7.
Document revision history
Date
Revision
Changes
24-May-2009
1
Initial release.
21-Jul-2009
2
Updated Table 1: Device summary.
29-Sep_2009
3
Removed target specification on cover page.
10-May-2012
4
Updated Table 1: Device summary
Table 2: Absolute maximum ratings:
– RIN MIN: changed unit to Ω (it was W)
18-Sep-2013
5
Updated Disclaimer.
Doc ID 15626 Rev. 5
21/22
VNN3NV04P-E, VNS3NV04P-E
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22/22
Doc ID 15626 Rev. 5