VNV49N0413TR

VNB49N04 - VNV49N04 OMNIFET: fully autoprotected Power MOSFET Features Type VCLAMP RDS(ON) ILIM 42 V 20 mΩ 49 A 10 VNB49N04 VNV49N04 1 PowerSO-10 TO-263(D2PAK) ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET ) s ( ct 3 1 u d o r P e Description t e l o The VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics™ VIPower™ M0 technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. )- s ( t c u d o s b O Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. r P e t e l o s b O Table 1. Device summary Order code Package September 2013 Tube Tape and reel PowerSO-10 VNV49N04 VNV49N0413TR TO-263 (D2PAK) VNB49N04 VNB49N0413TR Doc ID 1641 Rev 3 1/22 www.st.com 1 Contents VNB49N04 - VNV49N04 Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ) s ( ct u d o 3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 r P e t e l o 4.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2 TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 ) (s 5 s b O Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 t c u d o r P e t e l o s b O 2/22 Doc ID 1641 Rev 3 VNB49N04 - VNV49N04 List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 1641 Rev 3 3/22 List of figures VNB49N04 - VNV49N04 List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Connection diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal impedance for D2PAK / PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Static drain-source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Static drain-source on resistance (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Static drain-source on resistance (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Input charge vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Normalized on resistance vs temperature (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Normalized on resistance vs temperature (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Turn-on current slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Turn-on current slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Turn-off drain-source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Switching time resistive load vs RG (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Switching time resistive load vs RG (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Switching time resistive load vs VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Switching time test circuits for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 15 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 TO-263 (D2PAK) package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PowerSO-10 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 4/22 Doc ID 1641 Rev 3 VNB49N04 - VNV49N04 Block diagram 1 Block diagram Figure 1. Block diagram ) s ( ct u d o r P e t e l o Figure 2. Connection diagram (top view) ) (s s b O t c u d o r let P e o s b D2PAK PowerSO-10 O Doc ID 1641 Rev 3 5/22 Electrical specifications VNB49N04 - VNV49N04 2 Electrical specifications 2.1 Absolute maximum rating Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document. Table 2. Absolute maximum rating Symbol Parameter VDS Drain-source voltage (VIN = 0 V) VIN Input voltage ID Drain current IR Reverse DC output current VESD Ptot 2.2 o s b O 6/22 Pr 2000 V Total dissipation at Tc = 25 °C 125 W Internally limited °C Internally limited °C -55 to 150 °C ) (s Storage temperature e t e ol s b O t c u d o r Thermal data Value Parameter Rthj-case Thermal resistance junction-case (max) Rthj-amb V u d o Electrostatic discharge (R = 1.5 KΩ, C = 100 pF) Thermal data let 18 A Case operating temperature P e V -50 Tc Symbol Internally clamped A Operating junction temperature Table 3. Unit Internally limited Tj Tstg ) s ( ct Value Thermal resistance junction-ambient (max) Doc ID 1641 Rev 3 Unit PowerSO-10 D2PAK 1 1 °C/W 50 62.5 °C/W VNB49N04 - VNV49N04 2.3 Electrical specifications Electrical characteristics -40 °C < Tj < 125 °C, unless otherwise specified Table 4. Off Symbol Parameter Test conditions Min Typ Max Unit 42 50 V Drain-source clamp voltage ID = 200 mA; VIN = 0 34 VCLTH Drain-source clamp threshold voltage ID = 2 mA; VIN = 0 33 VINCL Input-source reverse clamp voltage IIN = -1 mA IDSS Zero input voltage drain current (VIN = 0 V) VDS = 13 V; VIN = 0 V IISS Supply current from input pin VDS = 0 V; VIN = 10 V VCLAMP -1.2 Symbol Input threshold voltage VDS = VIN; ID + IIN = 1 mA RDS(on) Static drain-source on resistance VIN = 10 V; ID = 25 A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Dynamic Symbol Pr gfs(1) Forward transconductance COSS Output capacitance l o s ete s ( t c u d o Parameter e t e l o s b o r P Test conditions VDS = 13 V; ID = 25 A; Tc = 25 °C µA µA du 250 µA Min Typ Max Unit 0.8 — 3 V — 0.04 Ω — 0.05 Ω Min Typ Max Unit 25 30 O ) VIN = 5 V; ID = 25 A (s) 550 220 Test conditions VIN(th) V ct VDS = 25 V; VIN = 0 V Parameter Table 6. -0.1 70 On(1) Table 5. V VDS = 13 V; f = 1 MHz; VIN = 0 V; Tc = 25 °C S 1100 1500 pF Min Typ Max Unit — 200 600 ns — 1300 3600 ns — 800 2400 ns — 300 900 ns 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% b O Table 7. Symbol td(on) tr td(off) tf Switching(1) Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDS = 15 V; ID = 25 A; Vgen = 10 V; Rgen = 10 Ω; (see Figure 27) Fall time Doc ID 1641 Rev 3 7/22 Electrical specifications Table 7. Symbol td(on) tr VNB49N04 - VNV49N04 Switching(1) (continued) Parameter Test conditions Turn-on delay time Rise time td(off) tf VDS = 15 V; ID = 25 A; Vgen = 10 V; Rgen = 1000 Ω (see Figure 27) Turn-off delay time Fall time (di/dt)on Qi Min Typ Max Unit — 1.3 3.8 µs — 3.8 10.4 µs — 12 24 µs — 6.1 17 µs Turn-on current slope VDS = 15 V; ID = 25 A; VIN = 10 V; Rgen = 10 Ω — 25 A/µs Total input charge VDS = 15 V; ID = 25 A; VIN = 10 V — 100 nC ) s ( ct 1. Parameters guaranteed by design/characterization Table 8. Symbol VSD(1) trr (2) Qrr(2) IRRM (2) Source drain diode Parameter Test conditions Forward on voltage ISD = 25A; VIN = 0 V Reverse recovery time Reverse recovery charge Reverse recovery current Symbol ILIM e t e ol tdlim(1) Tjsh (1) s b O Tjrs od Drain current limit (1) Pr Step response current limit Unit 1.8 V ns — 910 nC — 7.5 A Min Typ Max Unit VIN = 10 V; VDS = 13 V 28 49 70 A VIN = 5 V; VDS = 13 V 28 49 70 A VIN = 10 V 35 50 µs VIN = 5 V 90 150 µs e t e ol ) (s s b O Test conditions Overtemperature shutdown 150 °C Overtemperature reset 135 °C Igf(1) Fault sink current Eas(1) Single pulse avalanche energy VIN = 10 V; VDS = 13 V 50 mA VIN = 5 V; VDS = 13 V 20 mA Starting Tj = 25 °C; VDS = 20 V; VIN = 10 V; Rgen = 1 KΩ; L = 6 mH 1. Parameters guaranteed by design/characterization. 8/22 Max 250 t c u Parameter Typ — 2. Parameters guaranteed by design/characterization. Protections Pr — ISD = 25 A; di/dt = 100 A/µs; VDS = 30 V; Tj = 25 °C; (see Figure 29) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9. u d o Min Doc ID 1641 Rev 3 4 J VNB49N04 - VNV49N04 Electrical specifications 2.4 Electrical characteristics curves Figure 3. Thermal impedance for D2PAK / PowerSO-10 Figure 4. Derating curve ) s ( ct Figure 5. Output characteristics Figure 6. u d o r P e Transconductance t e l o ) (s s b O t c u d o r P e let Figure 7. o s b Static drain-source on resistance vs input voltage Figure 8. Static drain-source on resistance (part 1) O Doc ID 1641 Rev 3 9/22 Electrical specifications Figure 9. VNB49N04 - VNV49N04 Static drain-source on resistance (part 2) Figure 10. Input charge vs input voltage R DS(on) (mOhm) 40 35 30 25 V IN = 5V 20 V IN = 10V 15 10 ) s ( ct 5 0 5 Figure 11. 10 15 u d o 25 I D (A) 20 r P e Capacitance variations Figure 12. Normalized input threshold voltage vs temperature t e l o ) (s s b O t c u d o r let P e Figure 13. Normalized on resistance vs temperature (part 1) o s b Figure 14. Normalized on resistance vs temperature (part 2) O 10/22 Doc ID 1641 Rev 3 VNB49N04 - VNV49N04 Electrical specifications Figure 15. Turn-on current slope (part 1) Figure 16. Turn-on current slope (part 2) ) s ( ct u d o Figure 17. Turn-off drain-source voltage slope Figure 18. Turn-off drain-source voltage slope (part 1) (part 2) r P e t e l o ) (s s b O t c u d o r P e t e l o Figure 19. Switching time resistive load vs RG Figure 20. Switching time resistive load vs RG (part 1) (part 2) s b O Doc ID 1641 Rev 3 11/22 Electrical specifications VNB49N04 - VNV49N04 Figure 21. Switching time resistive load vs VIN Figure 22. Current limit vs junction temperature ) s ( ct u d o r P e Figure 23. Step response current limit Figure 24. Source drain diode forward characteristics t e l o ) (s s b O t c u d o r P e t e l o s b O 12/22 Doc ID 1641 Rev 3 VNB49N04 - VNV49N04 2.5 Electrical specifications Waveforms Figure 25. Unclamped inductive load test circuits ) s ( ct u d o r P e s b O Figure 26. Unclamped inductive waveforms ) (s t e l o t c u d o r P e t e l o s b O Doc ID 1641 Rev 3 13/22 Electrical specifications VNB49N04 - VNV49N04 Figure 27. Switching time test circuits for resistive load ) s ( ct u d o r P e Figure 28. Input charge test circuit ) (s s b O t c u d o r P e t e l o s b O 14/22 t e l o Doc ID 1641 Rev 3 VNB49N04 - VNV49N04 Electrical specifications Figure 29. Test circuit for inductive load switching and diode recovery times ) s ( ct u d o r P e t e l o Figure 30. Waveforms ) (s s b O t c u d o r P e t e l o s b O Doc ID 1641 Rev 3 15/22 Protection features 3 VNB49N04 - VNV49N04 Protection features During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50 KHz. The only difference from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: ● Overvoltage clamp protection: Internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. ) s ( ct Linear current limiter circuit: ● u d o Limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. r P e t e l o Overtemperature and short circuit protection: ● These are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 °C. The device is automatically restarted when the chip temperature falls below 135 °C. Status feedback: ● ) (s s b O t c u In the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100Ω. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)). d o r P e t e l o s b O 16/22 Doc ID 1641 Rev 3 VNB49N04 - VNV49N04 Package and packing information 4 Package and packing information 4.1 ECOPACK® In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.2 TO-263 (D2PAK) mechanical data Table 10. mm. Inch u d o Dim. Min. Typ Max. Min. A 4.30 — 4.60 0.169 A1 2.49 — 2.69 B 0.70 — 0.93 B2 1.25 — C 0.45 — bs ete C2 1.21 — D 8.95 L2 e t e l L3 o r P Max. 0.181 — 0.106 0.027 — 0.036 0.049 — 0.055 0.6 0.017 — 0.023 1.36 0.047 — 0.053 — 9.35 0.352 — 0.368 — 10.28 0.393 — 0.404 4.88 — 5.28 0.192 — 0.208 15 — 15.85 0.590 — 0.625 1.27 — 1.4 0.050 — 0.055 1.4 — 1.75 0.055 — 0.068 10 G Pr Typ. — O ) t(s c u d E L ) s ( ct TO-263 (D2PAK) mechanical data 1.4 0.098 ol o s b O Doc ID 1641 Rev 3 17/22 Package and packing information VNB49N04 - VNV49N04 Figure 31. TO-263 (D2PAK) package dimension D A C DETAIL "A" A2 C2 ) s ( ct DETAIL "A" A1 Br P e B2 t e l o E ) (s d o r t c u L2 P e L s b O L3 t e l o s b O 18/22 Doc ID 1641 Rev 3 u d o G VNB49N04 - VNV49N04 4.3 Package and packing information PowerSO-10 mechanical data Table 11. PowerSO-10 mechanical data mm. Inch Dim. Min. Typ Max. Min. Typ. Max. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 D1 7.40 7.60 0.291 E 9.30 9.50 0.366 E1 7.20 7.40 0.283 E2 7.20 7.60 0.283 E3 6.10 6.35 E4 5.90 6.10 e 1.27 F 1.25 H 13.80 h du e t e ol 14.40 0.300 du o r P 0.232 0.374 0.291 300 0.250 0.240 0.050 0.049 0.053 0.543 0.567 0.50 0.002 1.70 0.067 s ( t c Q 0º )- ol s b O 1.35 ete 0.240 ) s ( ct 0.378 8º o r P s b O Doc ID 1641 Rev 3 19/22 Package and packing information VNB49N04 - VNV49N04 Figure 32. PowerSO-10 package dimension B 0.10 A B 10 H E E E2 1 ) s ( ct SEATING PLANE e B DETAIL "A" u d o A C 0.25 r P e D = D1 = = = h t e l o SEATING PLANE A F A1 ) (s t c u s b O A1 L DETAIL "A" d o r P e t e l o s b O 20/22 E4 Doc ID 1641 Rev 3 α VNB49N04 - VNV49N04 5 Revision history Revision history Table 12. Document revision history Date Revision Change 01-Oct-1999 1 Initial release. 25-Nov-2010 2 Changed document template. Removed ISOWATT220 package. Updated Figure 9: Static drain-source on resistance (part 2) 20-Sep-2013 3 Updated Disclaimer. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 1641 Rev 3 21/22 VNB49N04 - VNV49N04 ) s ( ct Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. u d o r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. d o r P e t e l o s b O Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 22/22 Doc ID 1641 Rev 3