WS27C256L-12CMB

WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS — 120 ns Access Time • Ceramic Leadless Chip Carrier (CLLCC) • EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP • JEDEC Standard Pin Configuration GENERAL DESCRIPTION The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C256L provides the user with a very fast 35 nsec TOE output enable time. The WS27C256L is offered in a 28 pin 300 mil skinny CERDIP or the standard 600 mil CERDIP, and also in a 32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. All packages incorporate the standard JEDEC EPROM pinout. PIN CONFIGURATION TOP VIEW Chip Carrier A7 A12 VPP NC VCC A14 A13 CERDIP A6 A5 A4 A3 A2 A1 A0 NC O0 432 32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O1 O2 GND A8 A9 A11 NC OE A10 CE/PGM O7 O6 NC O3 O4 O5 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE A10 CE/PGM O7 O6 O5 O4 O3 PRODUCT SELECTION GUIDE PARAMETER Address Access Time (Max) Chip Select Time (Max) Output Enable Time (Max) WS27C256L-12 120 ns 120 ns 35 ns WS27C256L-15 150 ns 150 ns 40 ns WS27C256L-20 200 ns 200 ns 40 ns Return to Main Menu 4-19 WS27C256L ABSOLUTE MAXIMUM RATINGS* Storage Temperature............................–65° to + 150°C Voltage on any Pin with Respect to Ground ....................................–0.6V to +7V VPP with Respect to Ground...................–0.6V to + 14V VCC Supply Voltage with Respect to Ground ....................................–0.6V to +7V ESD Protection ..................................................> 2000V *NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. OPERATING RANGE RANGE Military TEMPERATURE –55°C to +125°C VCC +5V ± 10% DC READ CHARACTERISTICS Over Operating Range. (See Above) SYMBOL VIL VIH VOL VOH ISB1 ISB2 ICC IPP VPP ILI ILO PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Standby Current (CMOS) VCC Standby Current VCC Active Current VPP Supply Current VPP Read Voltage Input Leakage Current Output Leakage Current VIN = 5.5 V or Gnd VOUT = 5.5 V or Gnd IOL = 2.1 mA IOH = –400 µA CE = VCC ± 0.3 V (Note 2) CE = VIH CE = OE = VIL (Note 1) VPP = VCC VCC –0.4 –10 –10 F = 5 MHz F = 8 MHz 3.5 100 1 40 50 100 VCC 10 10 TEST CONDITIONS MIN –0.5 2.0 MAX 0.8 VCC + 1 0.4 UNITS V V V V µA mA mA mA µA V µA µA NOTES: 1. The supply current is the sum of ICC and IPP. The maximum current value is with Outputs O 0 to O 7 unloaded. 2. CMOS inputs: VIL = GND ± 0.3V, VIH = VCC ± 0.3 V. AC READ CHARACTERISTICS Over Operating Range (See Above) SYMBOL t ACC t CE tOE t DF PARAMETER Address to Output Delay CE to Output Delay OE to Output Delay Output Disable to Output Float (Note 3) Output Hold From Addresses, CE or OE, Whichever Occurred First (Note 3) 0 WS27C256L-12 MIN MAX WS27C256L-15 MIN MAX WS27C256L-20 MIN MAX UNITS 120 120 35 35 150 150 40 40 200 200 40 ns 40 t OH NOTE: 0 0 3. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven – see timing diagram. 4-20 WS27C256L AC READ TIMING DIAGRAM VIH ADDRESSES VIL ADDRESS VALID VIH CE VIL tCE VIH OE VIL tACC VIH OUTPUT VIL HIGH Z VALID OUTPUT tDF tOE (4) (5) (4) tOH HIGH Z NOTE: 4. OE may be delayed up to t CE – t OE after the falling edge of CE without impact on t CE. CAPACITANCE (5) TA = 25°C, f = 1 MHz SYMBOL C IN C OUT C VPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance CONDITIONS VIN = 0V VOUT = 0V VPP = 0 V TYP (6) 4 8 18 MAX 6 12 25 UNITS pF pF pF NOTES: 5. This parameter is only sampled and is not 100% tested. 6. Typical values are for TA = 25°C and nominal supply voltages. TEST LOAD (High Impedance Test Systems) A.C. TESTING INPUT/OUTPUT WAVEFORM 820 Ω 2.01 V D.U.T. 2.4 2.0 0.8 TEST POINTS 2.0 0.8 100 pF (INCLUDING SCOPE AND JIG CAPACITANCE) 0.4 A.C. testing inputs are driven at 2.4 V for a logic "1" and 0.4 V for a logic "0." Timing measurements are made at 2.0 V for a logic "1" and 0.8 V for a logic "0". NOTE: 7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures. 4-21 WS27C256L PROGRAMMING INFORMATION DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V. See Notes 8, 9 and 10) SYMBOLS ILI IPP ICC VIL VIH VOL VOH PARAMETER Input Leakage Current (VIN = VCC or Gnd) VPP Supply Current During Programming Pulse (CE/PGM = VIL ) VCC Supply Current Input Low Voltage Input High Voltage Output Low Voltage During Verify (IOL = 2.1 mA) Output High Voltage During Verify (IOH = –400 µA) 3.5 –0.1 2.0 MIN –10 MAX 10 60 40 0.8 VCC + 0.3 0.4 UNITS µA mA mA V V V V NOTES: 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP. 9. VPP must not be greater than 14 volts including overshoot. During CE/PGM = VIL, VPP must not be switched from 5 volts to 12.5 volts or vice-versa. 10. During power up the CE/PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP. AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V) SYMBOLS tAS tCOH tOES tOS tAH tOH tDF tOE t VS tPW tOCX PARAMETER Address Setup Time CE High to OE High Output Enable Setup Time Data Setup Time Address Hold Time Data Hold Time Chip Disable to Output Float Delay Data Valid From Output Enable VPP Setup Time PGM Pulse Width OE Low to CE "Don't Care" 2 500 2 1000 MIN 2 2 2 2 0 2 0 55 55 TYP MAX UNITS µs µs µs µs µs µs ns ns µs µs µs PROGRAMMING WAVEFORM ADDRESSES tAS DATA tOS VPP VPP VCC tVS DATA IN STABLE tOH HIGH Z tOE ADDRESS STABLE tAH DATA OUT VALID tDF VIH CE/PGM VIL tCES tOCX tCOH tPW VIH OE VIL tOES 4-22 WS27C256L MODE SELECTION The modes of operation of the WS27C256L are listed below. A single 5 V power supply is required in the read mode. All inputs are TTL levels except for VPP and A9 for device signature. MODE Read Output Disable Standby Programming Program Verify Program Inhibit Signature Manufacturer (13) Device(13) PINS CE/PGM VIL X VIH VIL X VIH VIL VIL OE VIL VIH X VIH VIL VIH VIL VIL A9 X X X X X X VH(12) VH(12) A0 X X X X X X VIL VIH VPP VCC VCC VCC VPP(12) VPP(12) VPP(12) VCC VCC VCC 5.0 V 5.0 V 5.0 V 5.8 V 5.8 V 5.0 V 5.0 V 5.0 V OUTPUTS DOUT High Z High Z DIN DOUT High Z 23 H C0 H NOTES: 11. X can be VIL or VIH. 12. VH = VPP = 12.5 ± 0.5 V. 13. A1 – A8, A10 – A14 = VIL. ORDERING INFORMATION PART NUMBER WS27C256L-12CMB* WS27C256L-12DMB* WS27C256L-12TMB* WS27C256L-15DMB* WS27C256L-15TMB* WS27C256L-20DMB* SPEED (ns) 120 120 120 150 150 200 PACKAGE TYPE 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.6" WSI PACKAGE OPERATING TEMPERATURE MANUFACTURING DRAWING RANGE PROCEDURE C2 D2 T2 D2 T2 D2 Military Military Military Military Military Military MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C NOTE: The actual part marking will not include the initials "WS." *SMD product. See page 4-1 for SMD number. PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS27C256L is programmed using Algorithm C shown on page 5-7. Return to Main Menu 4-23