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WS57C191

WS57C191

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    WS57C191 - HIGH SPEED 2K x 8 CMOS PROM/RPROM - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
WS57C191 数据手册
WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — t ACC = 25 ns — t CS = 12 ns • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Immune to Latch-UP — Up to 200 mA • Low Power Consumption • Fast Programming • Available in 300 Mil DIP and PLDCC • ESD Protection Exceeds 2000V GENERAL DESCRIPTION The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are currently using Bipolar PROMs. The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier (PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges. BLOCK DIAGRAM EPROM ARRAY PIN CONFIGURATION TOP VIEW 6 A5 - A10 ROW ADDRESSES ROW DECODER Chip Carrier 16,384 BITS CERDIP/Plastic DIP NC A5 A 6 A 7 5 A0 - A4 COLUMN ADDRESSES COLUMN DECODER VCC A8 A9 SENSE AMPLIFIERS CS1/ VPP CS2 CS3 8 A4 A3 A2 A1 A0 NC O0 432 28 27 26 1 5 25 6 24 7 23 8 22 9 21 10 20 11 19 12 13 14 15 16 17 18 O1 O2 NC O3 O4 O5 A7 A6 A5 A10 A4 CS1/VPP A3 CS2 A2 CS3 A1 NC A0 O7 O0 O6 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 A10 CS1/VPP CS2 CS3 O7 O6 O5 O4 O3 GND OUTPUTS PRODUCT SELECTION GUIDE PARAMETER Address Access Time (Max) CS to Output Valid Time (Max) 191C/291C-25 25 ns 12 ns 191C/291C-35 35 ns 20 ns 191C/291C-45 45 ns 20 ns 191C/291C-55 55 ns 20 ns Return to Main Menu 2-7 WS57C191C/291C ABSOLUTE MAXIMUM RATINGS* Storage Temperature............................–65° to + 150°C Voltage on any Pin with Respect to Ground ....................................–0.6V to +7V VPP with Respect to Ground...................–0.6V to + 14V ESD Protection ..................................................> 2000V MODE SELECTION PINS MODE Read CS1/ CS2 CS3 VCC OUTPUTS VPP VIL VIH X VIL X VIH X VIH X X X VIH VIL VCC VCC VCC VCC VCC VCC DOUT High Z High Z DIN DOUT High Z Output Disable VIH Output Disable Program Program Verify Output Disable X VPP VIL X *NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. OPERATING RANGE RANGE Commercial Industrial Military TEMPERATURE 0°C to +70°C –40°C to +85°C –55°C to +125°C VCC +5V ± 10% +5V ± 10% +5V ± 10% DC READ CHARACTERISTICS Over Operating Range. (See Above) SYMBOL VIL VIH VOL VOH ICC1 PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Active Current (CMOS) (Note 3) (Note 3) IOL = 16 mA IOH = –4 mA VCC = 5.5V, f = 0 MHz (Note 1), Output Not Loaded Add 2mA/MHz for AC Operation VCC = 5.5V, f = 0 MHz (Note 2), Output Not Loaded Add 2mA/MHz for AC Operation VIN = 5.5V or Gnd VOUT = 5.5 V or Gnd Comm'l Industrial Military Comm'l Industrial Military –10 –10 2.4 30 35 35 40 50 50 10 10 TEST CONDITIONS MIN –0.1 2.0 MAX 0.8 VCC + 0.3 0.4 UNITS V V V V mA mA mA mA mA mA µA µA ICC2 VCC Active Current (TTL) Input Leakage Current Output Leakage Current ILI ILO NOTES: 1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL ≤ 0.8V, VIH ≥ 2.0V. 3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. 2-8 WS57C191C/291C AC READ CHARACTERISTICS Over Operating Range. (See Above) PARAMETER Address to Output Delay CS to Output Delay Output Disable to Output Float * Address to Output Hold SYMBOL tACC tCS tDF tOH 0 191C/291C-25 191C/291C-35 191C/291C-45 191C/291C-55 MIN MAX MIN MAX MIN MAX MIN MAX UNITS 25 12 12 0 35 20 20 0 45 20 20 0 55 20 ns 20 *Sampled, Not 100% Tested AC READ TIMING DIAGRAM ADDRESSES VALID tACC tOH CS tCS OUTPUTS VALID tDF 2-9 WS57C191C/291C CAPACITANCE (4) TA = 25°C, f = 1 MHz SYMBOL C IN C OUT C VPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance CONDITIONS VIN = 0V VOUT = 0V VPP = 0 V TYP (5) 4 8 18 MAX 6 12 25 UNITS pF pF pF NOTES: 4. This parameter is only sampled and is not 100% tested. 5.Typical values are for TA = 25°C and nominal supply voltages. TEST LOAD (High Impedance Test Systems) A.C. TESTING INPUT/OUTPUT WAVEFORM 98 Ω 2.01 V D.U.T. 3.0 1.5 30 pF (INCLUDING SCOPE AND JIG CAPACITANCE) 0.0 TEST POINTS 1.5 A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Timing measurements are made at 1.5 V for input and output transitions in both directions. NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures. 2-10 WS57C191C/291C NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.60 40.0 35.0 1.40 30.0 NORMALIZED I CC DELTA Taa (ns) 1.20 25.0 20.0 15.0 10.0 5.0 0.60 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE ( V ) 0.0 TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.00 0.80 0.0 200 400 600 800 1000 CAPACITANCE ( pF ) NORMALIZED Taa vs. AMBIENT TEMPERATURE 1.6 1.2 NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE 1.4 1.1 NORMALIZED Taa 1.2 NORMALIZED I CC 1.0 1.0 0.9 0.8 0.6 -55 -35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C ) 0.8 -55 -35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) 2-11 WS57C191C/291C PROGRAMMING INFORMATION DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS ILI IPP ICC VOL VOH PARAMETER Input Leakage Current (VIN = VCC or Gnd) VPP Supply Current During Programming Pulse VCC Supply Current Output Low Voltage During Verify (IOL = 16 mA) Output High Voltage During Verify (IOH = –4 mA) 2.4 MIN –10 MAX 10 60 25 0.45 UNITS µA mA mA V V NOTES: 8. VPP must not be greater than 13 volts including overshoot. AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS tAS tDF tDS tPW tDH tCS tRF PARAMETER Address Setup Time Chip Disable Setup Time Data Setup Time Program Pulse Width Data Hold Time Chip Select Delay VPP Rise and Fall Time 1 2 100 2 30 200 MIN 2 30 TYP MAX UNITS µs ns µs µs µs ns µs PROGRAMMING WAVEFORM VIH ADDRESSES VIL VIH DATA VIL tDS VPP tDF tPW tDH tCS DATA IN DATA OUT tAS ADDRESS STABLE VIH CS1/VPP VIL VIH DON'T CARE VIL tRF tRF CS2/CS3 2-12 WS57C191C/291C ORDERING INFORMATION PART NUMBER WS57C191C WS57C191C-25D WS57C191C-25J WS57C191C-25P WS57C191C-35D WS57C191C-35J WS57C191C-35P WS57C191C-45D WS57C191C-45DI WS57C191C-45DMB* WS57C191C-45J WS57C191C-45P WS57C191C-55D WS57C191C-55DMB* WS57C291C WS57C291C-25S WS57C291C-25T WS57C291C-35S WS57C291C-35T WS57C291C-35TMB* WS57C291C-45S WS57C291C-45T WS57C291C-45TI WS57C291C-45TMB* WS57C291C-55T WS57C291C-55TMB* 25 25 35 35 35 45 45 45 45 55 55 24 Pin Plastic DIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin Plastic DIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin Plastic DIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin CERDIP, 0.3" 24 Pin CERDIP, 0.3" S1 T1 S1 T1 T1 S1 T1 T1 T1 T1 T1 Comm'l Comm’l Comm'l Comm’l Military Comm'l Comm'l Industrial Military Comm’l Military Standard Standard Standard Standard MIL-STD-883C Standard Standard Standard MIL-STD-883C Standard MIL-STD-883C 25 25 25 35 35 35 45 45 45 45 45 55 55 24 Pin CERDIP, 0.6" 28 Pin PLDCC 24 Pin Plastic DIP, 0.6" 24 Pin CERDIP, 0.6" 28 Pin PLDCC 24 Pin Plastic DIP, 0.6" 24 Pin CERDIP, 0.6" 24 Pin CERDIP, 0.6" 24 Pin CERDIP, 0.6" 28 Pin PLDCC 24 Pin Plastic DIP, 0.6" 24 Pin CERDIP, 0.6" 24 Pin CERDIP, 0.6" D1 J3 P2 D1 J3 P2 D1 D1 D1 J3 P2 D1 D1 Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Industrial Military Comm’l Comm'l Comm’l Military Standard Standard Standard Standard Standard Standard Standard Standard MIL-STD-883C Standard Standard Standard MIL-STD-883C SPEED (ns) PACKAGE TYPE OPERATING WSI PACKAGE TEMPERATURE MANUFACTURING DRAWING RANGE PROCEDURE NOTE: 9. The actual part marking will not include the initials "WS." *SMD product. See section 4 for DESC SMD number. PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS57C191C and WS57C291C are programmed using Algorithm D shown on page 5-9. Return to Main Menu 2-13
WS57C191
### 物料型号 - WS57C191C/291C:该系列产品包括不同速度等级(如25ns、35ns、45ns、55ns)和不同封装类型(如DIP、PLDCC)的型号。

### 器件简介 - WS57C191C/291C 是高性能16K紫外线可擦除电可编程只读存储器(RPROM),采用先进的CMOS技术制造,能够在双极型PROM速度下运行,同时仅消耗双极型PROM所需功率的25%。

### 引脚分配 - 引脚配置:与双极型PROM引脚兼容,方便从双极型PROM升级。

### 参数特性 - 访问时间:地址访问时间(t_ACC)和芯片选择到输出有效时间(t_CS)根据不同型号有所不同,如25ns、35ns、45ns、55ns。 - 电源电压:工作电压(Vcc)为+5V±10%。 - ESD保护:超过2000V。

### 功能详解 - 读取模式:在读取模式下,CS1/Vpp、CS2、CS3和Vcc的电平决定了输出状态。 - 编程模式:Vpp、CS2和CS3的电平决定了数据输入(DIN)的状态。

### 应用信息 - 应用温度范围:包括商业(0°C至+70°C)、工业(-40°C至+85°C)和军事(-55°C至+125°C)等级。 - 封装类型:包括600 mil DIP、Plastic Leaded Chip Carrier (PLDCC) 和 Ceramic Leadless Chip Carrier (CLLCC)。

### 封装信息 - 封装类型:提供24 Pin CERDIP、28 Pin PLDCC、24 Pin Plastic DIP等多种封装选项。 - 封装尺寸:如24 Pin CERDIP有0.6英寸和0.3英寸两种尺寸。
WS57C191 价格&库存

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