X0202MN

® X02 Series 1.25A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 1.25 600 and 800 50 to 200 Unit A V µA G A K DESCRIPTION Thanks to highly sensitive triggering levels, the X02 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... Available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments. TO-92 (X02xxA) SOT-223 (X02xxN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Parameter TO-92 SOT-223 TO-92 SOT-223 tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C TI = 55°C Ttab = 95°C TI = 55°C 0.8 Ttab = 95°C Tj = 25°C 25 22.5 2.5 50 1.2 0.2 - 40 to + 150 - 40 to + 125 A2S A/µs A W °C A A 1.25 A Value Unit IT(AV) ITSM I ²t dI/dt IGM PG(AV) Tstg Tj September 2000 - Ed: 3 1/6 X02 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) X02xx Symbol IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vto Rd IDRM IRRM VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ IRG = 10 µA IT = 50 mA RGK = 1 kΩ IG = 1 mA RGK = 1 kΩ VD = 67 % VDRM RGK = 1 kΩ ITM = 2.5 A tp = 380 µs Tj = 110°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C RL = 140 Ω Test Conditions 02 MIN. MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 10 1.45 0.9 200 5 500 µA 200 0.8 0.1 8 5 6 15 05 20 50 µA V V V mA mA V/µs V V mΩ Unit Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 kΩ THERMAL RESISTANCES Symbol Rth(j-l) Rth(j-t) Rth(j-a) Junction to leads (DC) Junction to tab (DC) Junction to ambient (DC) S = 5 cm² S = Copper surface under tab Parameter TO-92 SOT-223 TO-92 SOT-223 Value 60 25 150 60 Unit °C/W PRODUCT SELECTOR Part Number 600 V X0202MA X0202MN X0202NA X0202NN X0205MA X0205MN X0205NA X0205NN X X X X X X X X Voltage 800 V 200 µA 200 µA 200 µA 200 µA 50 µA 50 µA 50 µA 50 µA TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 Sensitivity Package 2/6 X02 Series ORDERING INFORMATION SENSITIVE SCR SERIES X 02 02 M A Blank 1BA2 PACKING MODE: 1BA2: TO-92 Bulk 2BL2: TO-92 Ammopack 5BA4: SOT-223 Tape & Reel CURRENT: 1.25A VOLTAGE: M: 600V N: 800V SENSITIVITY: 02: 200µA 05: 50µA PACKAGE: A: TO-92 N: SOT-223 OTHER INFORMATION Part Number X02xxyA 1BA2 X02xxyA 2BL2 X0202yN 5BA4 X0205yN 5BA4 Marking X02xxyA X02xxyA X2y X5y Weight 0.2 g 0.2 g 0.12 g 0.12 g Base Quantity 2500 2000 1000 1000 Packing mode Bulk Ammopack Tape & reel Tape & reel Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. P(W) Fig. 2-1: Average and D.C. on-state current versus lead temperature (SOT-223/TO-92). IT(av)(A) SOT-223 TO-92 SOT-223 1.2 1.0 0.8 0.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IT(av)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TO-92 0.4 0.2 0.0 0 25 Tlead or Tlab(°C) 50 75 100 125 3/6 X02 Series Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (SOT-223/ TO-92). IT(av)(A) SOT-223 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (SOT-223/TO-92). K = [Zth(j-a)/Rth(j-a)] 1.00 TO-92 SOT-223 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 TO-92 0.10 SOT-223 TO-92 Tamb(°C) 0 25 50 75 100 125 0.01 1E-2 tp(s) 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C] 1.50 1.25 1.00 0.75 0.50 0.25 Tj(°C) 0.00 -40 -20 0 20 40 60 80 100 120 140 Ω Fig. 5: R elative variation of holding current versus gate-cathode resistance (typical values). 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IH[Rgk] / IH[Rgk = 1 kΩ] Tj = 25°C Rgk(kΩ) 1E-1 1E+0 1E+1 0.0 1E-2 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). 10.0 dV/dt[Rgk]/dV/dt [Rgk=1k Ω] Tj = 125°C VD = 0.67xVDRM Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk = 1kΩ] 20 18 16 14 12 10 8 6 4 2 0 1.0 0.1 0.0 Rgk(kΩ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Cgk(nF) 0 2 4 6 8 10 12 14 16 18 20 22 4/6 X02 Series Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A), I2t(A2S) 300 25 20 15 10 ITSM(A) tp=10ms Onecycle 100 Nonrepetitive Tjinitial=25°C Number of cycles Repetitive T amb=25°C 10 5 tp(ms) 0 1 10 100 1000 1 0.01 0.10 1.00 10.00 Fig. 10: On-state characteristics (maximum values). Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SOT-223). Rth(j-a) (°C/W) 130 120 110 100 90 80 70 60 50 40 30 20 S(cm2) 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3E+1 1E+1 ITM(A) 1E+0 VTM(V) 1E-1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS A a B C REF. Millimeters Min. Typ. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Max. Min. Inches Typ. 0.053 0.185 0.100 Max. F D E A B C D E F a 0.146 0.019 5/6 X02 Series PACKAGE MECHANICAL DATA SOT-223 (Plastic) DIMENSIONS A A1 B e1 D B1 V c REF. Millimeters Min. Typ. Max. Min. Inches Typ. Max. HE e A A1 B B1 c D e e1 E H V 0.02 0.60 2.90 0.24 6.30 3.30 6.70 0.70 3.00 0.26 6.50 2.3 4.6 3.50 7.00 1.80 0.071 0.1 0.0008 0.004 0.85 0.024 0.027 0.034 3.15 0.114 0.118 0.124 0.35 0.009 0.010 0.014 6.70 0.248 0.256 0.264 0.090 0.181 3.70 0.130 0.138 0.146 7.30 0.264 0.276 0.287 10° max FOOTPRINT DIMENSIONS (in millimeters) SOT-223 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 6/6