X1360

2STX1360 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features ■ ■ ■ ■ VERY LOW COLLECTOR-EMITTER SATUARATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED IN COMPLANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE Applications ■ ■ ■ ■ ■ EMERGENCY LIGHTING LED CCFL DRIVERS (BACK LIGHTING) VOLTAGE REGULATION RELAY DRIVER TO-92 Internal Schematic Diagram Description The 2STX1360 is a NPN transistor manufactured using new “PB-HDC” (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Order Codes Part Number 2STX1360 Marking X1360 Package TO-92 Packing Bulk November 2005 rev.1 1/10 www.st.com 10 1 Absolute Maximum Ratings 2STX1360 1 Table 1. Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Base Voltage (IE = 0) (IC = 0) Value 80 60 6 3 5 0.2 0.4 1 -65 to 150 150 Unit V V V A A A A W °C °C Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Table 2. Symbol RthJ-case RthJ-amb Thermal Data Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max Value 44.6 125 Unit °C/W °C/W 2/10 2STX1360 2 Electrical Characteristics 2 Table 3. Symbol ICBO IEBO VBE VCE(sat) Note: 1 VBE(sat) Note: 1 hFE Note: 1 td tr ts tf fT Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Base-Emitter Voltage Collector-Emitter Saturation Voltage Test Conditions VCB = 80 V VEB = 6 V VCE = 2 V I C = 2 A __ _ IC = 3 A IC = 100 mA IB = 100 mA IB = 100 mA VCE = 2 V VCE = 2 V IC = 3 A 80 160 __ _ IB = 150 mA 630 670 150 210 0.89 Min. Typ. Max. 100 100 730 300 500 1.2 Unit nA nA mV mV mV V Base-Emitter Saturation Voltage IC = 2 A __ _ IC = 100 mA _ IC = 1 A _ VCC = 10 V (see figure 8) DC Current Gain RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Transition Frequency 280 17 81 620 54 130 400 20 100 720 65 ns ns ns ns MHz IB1 = - IB2 = 300 mA IC = 0.1 A ___ VCE = 10 V Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 3/10 2 Electrical Characteristics 2STX1360 2.1 Typical Characteristics DC Current Gain Figure 2. DC Current Gain Figure 1. Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage Figure 5. Resistive Load Switching Times Figure 6. Resistive LoadSwitching Times 4/10 2STX1360 Figure 7. Reverse Bised SOA 2 Electrical Characteristics 5/10 3 Test Circuits 2STX1360 3 Figure 8. Test Circuits Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resisitor 6/10 2STX1360 4 Package Mechanical Data 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 4 Package Mechanical Data 2STX1360 TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 O TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 A b D E e e1 L R S1 W V 0102782 C 8/10 2STX1360 5 Revision History 5 Revision History Date 17-Nov-2005 Revision 1 Initial Release Changes 9/10 5 Revision History 2STX1360 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is gr by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are s to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products a authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Jap Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10