XL0840

XL0840 0.8 A asymmetric sensitive gate SCR Datasheet - production data A Description K Thanks to highly sensitive triggering levels, the XL0840 is suitable for all applications where the available gate current is limited, such as Christmas lights control. G Table 1: Device summary K G A Symbol Value Unit IT(RMS) 0.8 A VDRM 400 V IGT 200 µA TO-92 Features     High immunity: 75 V/µs at 125 °C Sensitive gate: 200 µA at 25 °C Low leakage current: IDRM max. 100 µA at 125 °C ECOPACK®2 ROHS - No exemption Application  Christmas lights control September 2017 DocID9601 Rev 2 This is information on a product in full production. 1/8 www.st.com Characteristics 1 XL0840 Characteristics Table 2: Absolute ratings (limiting values), limiting values Symbol Parameter Value IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current I²t 0.5 tp = 8.3 ms 8 Tj = 25 °C tp = 10 ms I²t value for fusing 0.8 TC = 55 °C 7 Unit A A 0.24 A²s dl/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns f = 60 Hz Tj = 125 °C 30 A/µs IGM Peak forward gate current tp = 20 µs Tj = 125 °C 1 A VDRM Repetitive peak off-state voltage Max. 400 V PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W Tstg Tj Storage junction temperature range -40 to +150 Operating junction temperature range -40 to +125 °C Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VGT Test conditions VD = 12 V, RL = 140 Ω Value Unit Max. 200 µA Max. 0.8 V Min. 0.1 V VGD VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ VRG IRG = 10 µA Min. 8 V IH IT = 50 mA, RGK = 1 kΩ Max. 5 mA IL IG = 1 mA, RGK = 1 kΩ Tj = 125 °C Max. 6 mA VD = 67 % VDRM, RGK = 1 kΩ Tj = 125 °C Min. 75 V/µs VTM ITM = 1.6 A, tp = 380 µs Tj = 25 °C Max. 1.95 V Vto Threshold voltage Tj = 125 °C Max. 1.0 V Rd Dynamic resistance Tj = 125 °C Max. 600 mΩ IDRM VDRM RGK = 1 kΩ Tj = 25 °C Max. 1 Tj = 125 °C Max. 100 dV/dt(1) Tj = 125 °C µA Notes: (1)for both polarities of A2 referenced to A1. Table 4: Thermal parameters Symbol 2/8 Parameter Value Rth(j-a) Junction to ambient (DC) 150 Rth(j-l) Junction to lead (DC) 80 DocID9601 Rev 2 Unit °C/W XL0840 Characteristics 1.1 Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and D.C. on-state current versus lead temperature P(W) 1.0 0.9 IT(AV)(A) α = 180° 0.9 D.C. 0.8 0.8 0.7 0.7 0.6 α = 180° 0.6 0.5 0.5 0.4 0.4 0.3 0.3 360° 0.2 0.1 0.2 0.1 IT(AV)(A) 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 Figure 3: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) 0.7 Tlead(°C) 0.0 IT(AV)(A) 0.6 0 25 50 75 100 125 Figure 4: Relative variation of thermal impedance junction to ambient versus pulse duration 1.E+00 K = [Zth(j-a)/Rth(j-a)] D.C. 0.5 α = 180° 0.4 1.E-01 0.3 0.2 0.1 tp(s) Tamb(°C) 0.0 0 25 50 75 100 125 1.E-02 1.E-02 Figure 5: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 6: Relative variation of holding current versus gate-cathode resistance (typical values) 11 IH [RGK] / I H [RGK =1 kΩ] Tj = 25 °C 10 9 8 7 6 5 4 3 2 1 0 0.01 DocID9601 Rev 2 RGK(kΩ) 0.10 1.00 10.00 3/8 Characteristics XL0840 Figure 7: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) Figure 8: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) 10 dV/dt[ R GK ] / dV/dt [ R GK = 1 KΩ] 5 dV/dt [CGK] / dV/dt [RGK=1KΩ] 9 T j = 125°C V D = 270V Tj Tj = 125 °C VD V D = 270 V RGK R GK = 1 KΩ 8 4 7 6 3 5 4 2 3 2 1 1 RGK (kΩ) 0 0.10 1.00 10.00 ITSM(A) 7 Non repetitive Tj initial = 25 °C 6 tp=10ms One cycle 5 4 3 Repetitive Tlead = 55 °C 2 1 Number of cycles 0 1 10 100 1000 Figure 11: On-state characteristics (maximum values) 4/8 CGK(nF) 10.00 Figure 10: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp