ZMM4B3

ZMM1B...ZMM75B Silicon Epitaxial Planar Zener Diodes MiniMELF case especially for automatic insertion. LL-34 These diodes are also available in DO-35 case with the type designation BZX55B... Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Ptot Junction Temperature Storage Temperature Range 1) Symbol Value Unit 1) mW 500 C Tj 175 O Tstg - 55 to + 175 O Symbol Max. Unit RθJA 0.3 1) K/mW VF 1 V C Valid provided that electrodes are kept at ambient temperature Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100 mA 1) Valid provided that electrodes are kept at ambient temperature ® Dated : 17/08/2011 Rev: 03 ZMM1B...ZMM75B Characteristics at Ta = 25 OC Zener Voltage Range Type ZMM1B VZnom 2) 1) Dynamic Resistance Reverse Leakage Current o Temp coefficient of Zener Voltage VZT at IZT ZZT ZZK at IZK Ta = 25 OC Ta = 125 C at VR (V) (V) (mA) Max. (Ω) Max. (Ω) (mA) Max. (µA) Max. (µA) (V) TKvz (%/K) 0.75 0.73…0.77 5 8 50 1 - - - -0.26...-0.23 ZMM2B0 2 1.96…2.04 5 85 600 1 100 200 1 -0.09...-0.06 ZMM2B2 2.2 2.16…2.24 5 85 600 1 75 160 1 -0.09...-0.06 ZMM2B4 2.4 2.35…2.45 5 85 600 1 50 100 1 -0.09...-0.06 ZMM2B7 2.7 2.65…2.75 5 85 600 1 10 50 1 -0.09...-0.06 ZMM3B0 3 2.94…3.06 5 85 600 1 4 40 1 -0.08...-0.05 ZMM3B3 3.3 3.23…3.37 5 85 600 1 2 40 1 -0.08...-0.05 ZMM3B6 3.6 3.53…3.67 5 85 600 1 2 40 1 -0.08...-0.05 ZMM3B9 3.9 3.82…3.98 5 85 600 1 2 40 1 -0.08...-0.05 ZMM4B3 4.3 4.21…4.39 5 75 600 1 1 20 1 -0.06...-0.03 ZMM4B7 4.7 4.61…4.79 5 60 600 1 0.5 10 1 -0.05...+0.02 ZMM5B1 5.1 5…5.2 5 35 550 1 0.1 2 1 -0.02...+0.02 ZMM5B6 5.6 5.49…5.71 5 25 450 1 0.1 2 1 -0.05...+0.05 ZMM6B2 6.2 6.08…6.32 5 10 200 1 0.1 2 2 0.03...0.06 ZMM6B8 6.8 6.66…6.94 5 8 150 1 0.1 2 3 0.03...0.07 ZMM7B5 7.5 7.35…7.65 5 7 50 1 0.1 2 5 0.03...0.07 ZMM8B2 8.2 8.04…8.36 5 7 50 1 0.1 2 6.2 0.03...0.08 ZMM9B1 9.1 8.92…9.28 5 10 50 1 0.1 2 6.8 0.03...0.09 ZMM10B 10 9.8…10.2 5 15 70 1 0.1 2 7.5 0.03...0.1 ZMM11B 11 10.78…11.22 5 20 70 1 0.1 2 8.2 0.03...0.11 ZMM12B 12 11.76…12.24 5 20 90 1 0.1 2 9.1 0.03...0.11 ZMM13B 13 12.74…13.26 5 26 110 1 0.1 2 10 0.03...0.11 ZMM15B 15 14.7…15.3 5 30 110 1 0.1 2 11 0.03...0.11 ZMM16B 16 15.68…16.32 5 40 170 1 0.1 2 12 0.03...0.11 ZMM18B 18 17.64…18.36 5 50 170 1 0.1 2 13 0.03...0.11 ZMM20B 20 19.6…20.4 5 55 220 1 0.1 2 15 0.03...0.11 ZMM22B 22 21.56…22.44 5 55 220 1 0.1 2 16 0.04...0.12 ZMM24B 24 23.52…24.48 5 80 220 1 0.1 2 18 0.04...0.12 ZMM27B 27 26.46…27.54 5 80 220 1 0.1 2 20 0.04...0.12 ZMM30B 30 29.4…30.6 5 80 220 1 0.1 2 22 0.04...0.12 ZMM33B 33 32.34…33.66 5 80 220 1 0.1 2 24 0.04...0.12 ZMM36B 36 35.28…36.72 5 80 220 1 0.1 2 27 0.04...0.12 ZMM39B 39 38.22…39.78 2.5 90 500 0.5 0.1 5 30 0.04...0.12 ZMM43B 43 42.14…43.86 2.5 90 500 0.5 0.1 5 33 0.04...0.12 ZMM47B 47 46.06…47.94 2.5 110 600 0.5 0.1 5 36 0.04...0.12 ZMM51B 51 49.98…52.02 2.5 125 700 0.5 0.1 10 39 0.04...0.12 ZMM56B 56 54.88…57.12 2.5 135 700 0.5 0.1 10 43 0.04...0.12 ZMM62B 62 60.76…63.24 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 ZMM68B 68 66.64…69.36 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 ZMM75B 75 73.5…76.5 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 1) Tested with pulses tp = 20 ms. 2) The ZMM1B is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode electrode to the negative pole. ® Dated : 17/08/2011 Rev: 03 ZMM1B...ZMM75B Breakdown characteristics Tj = constant (pulsed) mA 50 ZMM3B3 ZMM3B9 ZMM4B7 Tj=25o C ZMM6B8 ZMM... ZMM2B7 ZMM1B Iz 40 ZMM8B2 ZMM5B6 30 20 Test current Iz 5mA 10 0 0 1 2 3 5 4 7 6 8 10 V 9 Vz Breakdown characteristics Tj = constant (pulsed) ZMM... mA 30 Tj=25o C ZMM10B ZMM12B Iz ZMM15B 20 ZMM18B ZMM22B ZMM27B Test current Iz 5mA 10 ZMM33B ZMM36B 0 0 10 30 20 40 V Vz ® Dated : 17/08/2011 Rev: 03 ZMM1B...ZMM75B Breakdown characteristics Tj = constant (pulsed) mA 10 Iz ZMM... Tj=25o C ZMM39B ZMM51B ZMM43B ZMM47B 8 Test current Iz 5mA 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 V Vz Admissible power dissipation versus ambient temperature Forward characteristics Valid provided that electrodes are kept at ambient temperature. mA 10 ZMM... mW 500 ZMM... 3 10 2 iF P tot 400 10 o Tj=100 C 1 300 o Tj=25 C 10 10 10 10 -1 200 -2 -3 100 -4 10 -5 0 0 0.2 0.4 0.6 0.8 VF 1V 0 200o C 100 Tamb ® Dated : 17/08/2011 Rev: 03