XRNI12W

Part Number: XRNI12W PHOTOTRANSISTOR Package Schematics Features ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Specifications are subject to change without notice. Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Unit Test Condiction VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC = 100µA Ee = 0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE = 100µA Ee = 0mW/cm2 VCE(SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC = 2mA Ee = 20mW/cm2 ICEO Collector Dark Current - - 100 nA VCE = 10V Ee = 0mW/cm2 TR Rise Time (10% to 90%) - 15 - µs TF Fall Time (90% to 10%) - 15 - µs On State Collector Current 0.5 2.5 - mA VCE = 5V Ee = 1mW/cm2 λ= 940nm λ0.1 Range of spectral bandwidth 420 - 1120 nm - λp Wavelength of peak sensitivity - 940 - nm - Angle of half sensitivity - 20 - deg - I(ON) 2θ1/2 VCE = 5V IC = 1mA RL = 1KΩ Absolute Maximum Ratings at TA=25°C Parameter Maximum Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature Operating / Storage Temperature Range Lead Solder Temperature (>5mm for 5sec) 100mW -40 ~ +85°C 260°C A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) Dec 22,2018 XDSA8078 V7 Layout: Maggie L. P. 1/3 Part Number: XRNI12W Relative spectral sensitivity (a. u.) PHOTOTRANSISTOR 100% 15° Ta = 25 °C Ta = 25 °C 0° 1.0 30° 80% 45° 60% 40% 60° 0.5 20% 75° 0% 350 450 550 650 750 850 Wavelength (nm) 950 1050 1150 90° 0° 15° 30° 45° 60° 75° 0.0 90° Relative Intensity Vs. CIE Wavelength 5 1 0.1 0.01 0.01 Ta = 25 °C 4 3 2 Ee = 1mW/cm2 1 Ee = 0.5mW/cm2 Ee = 0.25mW/cm2 0 0.1 1 0 10 2 1000 VCE = 20V Ee = 0 100 10 1 0.1 0 25 50 75 100 Ambient temperature (°C) Collector Dark Current vs. Ambient Temperature Dec 22,2018 Collector power dissipation Pd (mW) Collector dark current (nA) Irradiance Ee (mW/cm ) Collector Current vs. Irradiance 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 125 100 75 50 25 0 0 20 40 60 80 100 Ambient temperature (°C) Collector Power Dissipation vs. Ambient Temperature 160 VCE=5V 140 Ee=1mW/cm2 120 100 80 60 40 20 0 0 Collector dark current (nA) 10 VCE = 5V Ta = 25 °C Collector current (mA) Collector current Ic (mA) 100 Relative collector current (%) Spatial Distribution 20 40 60 80 100 Ambient temperature (°C) Relative Collector Current vs. Ambient Temperature 10 Ta = 25 °C 1 0.1 0.01 0 5 10 15 20 25 30 Collector-emitter voltage VCE (V) Collector Dark Current vs. Collector-Emitter Voltage XDSA8078 V7 Layout: Maggie L. P. 2/3 Part Number: XRNI12W PHOTOTRANSISTOR PACKING & LABEL SPECIFICATIONS TERMS OF USE 1. Data presented in this document reflect statistical figures and should be treated as technical reference only. 2. Contents within this document are subject to improvement and enhancement changes without notice. 3. The product(s) in this document are designed to be operated within the electrical and environmental specifications indicated on the datasheet. User accepts full risk and responsibility when operating the product(s) beyond their intended specifications. 4. The product(s) described in this document are intended for electronic applications in which a person’s life is not reliant upon the LED. Please consult with a SunLED representative for special applications where the LED may have a direct impact on a person’s life. 5. The contents within this document may not be altered without prior consent by SunLED. 6. Additional technical notes are available at https://www.SunLEDusa.com/TechnicalNotes.asp Dec 22,2018 XDSA8078 V7 Layout: Maggie L. P. 3/3