XRNI30W-1

Part Number: XRNI30W-1 Phototransistor Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Specifications are subject to change without notice. Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Unit Test Condiction VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC = 100µA Ee = 0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE = 100µA Ee = 0mW/cm2 VCE(SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC = 2mA Ee = 20mW/cm2 ICEO Collector Dark Current - - 100 nA VCE = 10V Ee = 0mW/cm2 TR Rise Time (10% to 90%) - 15 - µs TF Fall Time (90% to 10%) - 15 - µs 0.3 0.8 - mA VCE = 5V Ee = 1mW/cm2 λ= 940nm 420 - 1120 nm - - 940 - nm - - 50 - deg - I(ON) On State Collector Current λ0.1 Range of spectral bandwidth λp Wavelength of peak sensitivity 2θ1/2 Angle of half sensitivity VCE = 5V IC = 1mA RL = 1KΩ Absolute Maximum Ratings at TA=25°C Parameter Maximum Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature Operating / Storage Temperature Range Lead Solder Temperature (>5mm for 5sec) 100mW -40 ~ +85°C 260°C A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) Dec 18,2020 XDSA3288 V7 Layout: Maggie L. P. 1/3 Part Number: XRNI30W-1 100% Ta = 25 °C 15° Ta = 25 °C 80% 0° 1.0 30° 60% 45° 40% 60° 0.5 20% 75° 0% 350 450 550 650 750 850 Wavelength (nm) 950 1050 1150 90° 0° Relative Intensity Vs. CIE Wavelength 1 Collector current (mA) VCE = 5V Ta = 25 °C 1 0.1 Collector dark current (nA) 0.8 2 Ee = 1mW/cm 0.6 0.4 2 Ee = 0.5mW/cm 0.2 Ee = 0.25mW/cm2 0 0.1 1 10 Irradiance Ee (mW/cm2) Collector Current vs. Irradiance 1000 VCE = 20V Ee = 0 100 10 1 0.1 0 25 50 75 100 Ambient temperature (°C) Collector Dark Current vs. Ambient Temperature Dec 18,2020 Ta = 25 °C 30° 160 45° 60° 75° 0.0 90° 125 100 75 50 25 0 VCE=5V 140 Ee=1mW/cm2 120 100 80 60 40 20 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 0 Collector dark current (nA) 0.01 0.01 Collector power dissipation Pd (mW) Collector current Ic (mA) 10 15° Spatial Distribution Relative collector current (%) Relative spectral sensitivity (a. u.) Phototransistor 20 40 60 80 100 Ambient temperature (°C) Relative Collector Current vs. Ambient Temperature 10 Ta = 25 °C 1 0.1 0.01 0 20 40 60 80 100 Ambient temperature (°C) Collector Power Dissipation vs. Ambient Temperature 0 5 10 15 20 25 30 Collector-emitter voltage VCE (V) Collector Dark Current vs. Collector-Emitter Voltage XDSA3288 V7 Layout: Maggie L. P. 2/3 Part Number: XRNI30W-1 Phototransistor PACKING & LABEL SPECIFICATIONS TERMS OF USE 1. Data presented in this document reflect statistical figures and should be treated as technical reference only. 2. Contents within this document are subject to improvement and enhancement changes without notice. 3. The product(s) in this document are designed to be operated within the electrical and environmental specifications indicated on the datasheet. User accepts full risk and responsibility when operating the product(s) beyond their intended specifications. 4. The product(s) described in this document are intended for electronic applications in which a person’s life is not reliant upon the LED. Please consult with a SunLED representative for special applications where the LED may have a direct impact on a person’s life. 5. The contents within this document may not be altered without prior consent by SunLED. 6. Additional technical notes are available at https://www.SunLEDusa.com/TechnicalNotes.asp Dec 18,2020 XDSA3288 V7 Layout: Maggie L. P. 3/3