XZTNI53W-1

XZTNI53W-1

  • 厂商:

    SUNLED

  • 封装:

    0603

  • 描述:

    EMITTERIR940NM50MASMD

  • 详情介绍
  • 数据手册
  • 价格&库存
XZTNI53W-1 数据手册
Part Number: XZTNI53W-1 1.6 x 0.8 mm Infrared Emitting Diode Features Package Schematics ● Long life and robust package ● Standard Package: 2,000pcs/ Reel ● MSL (Moisture Sensitivity Level): 3 ● Halogen-free ● RoHS compliant Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. Absolute Maximum Ratings (TA=25°C) TNI (GaAs) Unit Reverse Voltage VR 5 V Forward Current IF 50 mA Forward Current (Peak) 1/100 Duty Cycle 10us Pulse Width iFS Power Dissipation PD 90 Operating Temperature TA -40 ~ +85 1200 Operating Characteristics (TA=25°C) mA mW °C Storage Temperature Tstg -40 ~ +85 A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) Part Number XZTNI53W-1 Emitting Material GaAs Lens-color Water Clear TNI (GaAs) Unit Forward Voltage (Typ.) (IF=20mA) VF 1.2 V Forward Voltage (Max.) (IF=20mA) VF 1.6 V Reverse Current (Max.) (VR=5V) IR 10 µA Wavelength of Peak Emission CIE127-2007* (Typ.) (IF=20mA) λP 940* nm Spectral Line Full Width At Half-Maximum (Typ.) (IF=20mA) △λ 50 nm C 90 pF Capacitance (Typ.) (VF=0V, f=1MHz) Radiant Intensity CIE127-2007* (Po=mW/sr) @20mA min. typ. 1.2 0.8* 2.8 1.8* Wavelength CIE127-2007* nm λP Viewing Angle 2θ 1/2 940* 150° *Radiant Intensity value and wavelength are in accordance with CIE127-2007 standards. Dec 07,2020 XDSA8991 V5-X Layout: Maggie L. P. 1/4 Part Number: XZTNI53W-1 1.6 x 0.8 mm Infrared Emitting Diode TNI Relative Radiant Intensity 100% 15° Ta = 25 °C Ta = 25 °C 0° 1.0 30° 80% 45° 60% 60° 40% 20% 0.5 75° 0% 600 650 700 750 800 850 Wavelength (nm) 900 950 1000 90° 1050 0° 15° 30° 45° 60° 75° 0.0 90° Spatial Distribution Relative Intensity Vs. CIE Wavelength Forward current (mA) T a = 25 °C 40 30 20 10 0 0.8 1.0 1.2 1.4 1.6 Forward voltage (V) Forward Current vs. Forward Voltage 1.8 T a = 25 °C 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 Forward current (mA) Radiant Intensity vs. Forward Current 50 70 2.5 Radiant intensity normalised at T a = 25 °C 2.5 Radiant intensity normalised at 20 mA 50 Permissible forward current (mA)  TNI 60 2.0 50 1.5 40 30 1.0 20 0.5 10 0 0.0 -40 -20 0 20 40 60 80 100 Ambient temperature (°C) Forward Current Derating Curve -40 -20 0 20 40 60 80 100 Ambient temperature (°C) Radiant Intensity vs. Ambient Temperature LED is recommended for reflow soldering and soldering profile is shown below. Dec 07,2020 XDSA8991 V5-X Layout: Maggie L. P. 2/4 Part Number: XZTNI53W-1 1.6 x 0.8 mm Infrared Emitting Diode  The device has a single mounting surface. The device must be mounted according to the specifications.  Recommended Soldering Pattern (Units : mm; Tolerance: ± 0.1)  Reel Dimension (Units : mm)  Tape Specification (Units : mm) Remarks: If special sorting is required (e.g. binning based on forward voltage or radiant intensity / luminous flux), the typical accuracy of the sorting process is as follows: 1. Radiant Intensity / Luminous Flux: +/-15% 2. Forward Voltage: +/-0.1V Note: Accuracy may depend on the sorting parameters Dec 07,2020 XDSA8991 V5-X Layout: Maggie L. P. 3/4 Part Number: XZTNI53W-1 1.6 x 0.8 mm Infrared Emitting Diode PACKING & LABEL SPECIFICATIONS TERMS OF USE 1. Data presented in this document reflect statistical figures and should be treated as technical reference only. 2. Contents within this document are subject to improvement and enhancement changes without notice. 3. The product(s) in this document are designed to be operated within the electrical and environmental specifications indicated on the datasheet. User accepts full risk and responsibility when operating the product(s) beyond their intended specifications. 4. The product(s) described in this document are intended for electronic applications in which a person’s life is not reliant upon the LED. Please consult with a SunLED representative for special applications where the LED may have a direct impact on a person’s life. 5. The contents within this document may not be altered without prior consent by SunLED. 6. Additional technical notes are available at https://www.SunLEDusa.com/TechnicalNotes.asp Dec 07,2020 XDSA8991 V5-X Layout: Maggie L. P. 4/4
XZTNI53W-1
- 物料型号:XZTNI53W-1,是SunLED公司生产的1.6 x 0.8 mm尺寸的红外发射二极管。 - 器件简介:该器件具有长寿命和坚固的封装,符合RoHS标准,无卤素,标准包装为每卷2000个。 - 引脚分配:文档中提供了封装图,但未明确指出引脚分配。 - 参数特性: - 绝对最大额定值:反向电压VR,正向电流Ip为50mA,脉冲宽度10us时的峰值正向电流IRS为1200mA,功率耗散Pp为90mW,工作温度范围-40~+85°C,存储温度范围-40~+85°C。 - 工作特性:典型正向电压Vg(在20mA电流下),最大正向电压Vp为1.6V,最大反向电流IR为10pA,峰值发射波长为940nm,光谱线全宽半高(FWHM)为50nm,电容为90pF。 - 功能详解:文档提供了在不同角度和环境温度下的相对辐射强度和空间分布图,以及正向电流与正向电压、辐射强度与正向电流、辐射强度与环境温度的关系图。 - 应用信息:推荐湿度在40%到60%之间,以减少组装过程中的静电积累。 - 封装信息:提供了推荐焊接图案和尺寸,以及卷轴尺寸和胶带规格。特殊排序(如基于正向电压或辐射强度/光通量的分选)的典型精度为辐射强度/光通量±15%,正向电压±0.1V。
XZTNI53W-1 价格&库存

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XZTNI53W-1
  •  国内价格 香港价格
  • 1+3.881501+0.49788
  • 10+2.6370810+0.33826
  • 100+1.87837100+0.24094
  • 500+1.53622500+0.19706
  • 1000+1.423511000+0.18260

库存:1008

XZTNI53W-1
  •  国内价格 香港价格
  • 2000+1.327492000+0.17028
  • 4000+1.245914000+0.15982
  • 6000+1.204046000+0.15445
  • 10000+1.1567010000+0.14837
  • 14000+1.1285414000+0.14476
  • 20000+1.1010620000+0.14124

库存:1008