XZWRA25X92SCA-4

HCF4011B QUAD 2 INPUT NAND GATE ■ ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4011B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4011B QUAD 2 INPUT NAND GATE provides the system designer with direct ) (s ) s ( ct DIP SOP PACKAGE TUBE t e l o DIP SOP u d o r P e ORDER CODES HCF4011BEY HCF4011BM1 T&R HCF4011M013TR s b O implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. t c u d o r P e t e l o s b O PIN CONNECTION September 2001 1/7 HCF4011B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 2, 5, 6, 8, A, B, C, D, E, Data Inputs 9, 12, 13 F, G, H 3, 4, 10, 11 J, K, L, M Data Outputs VSS Negative Supply Voltage 7 VDD 14 Positive Supply Voltage TRUTH TABLE INPUTS OUTPUTS A, C, E, G B, D, F, H L L H H L H L H LOGIC DIAGRAM ) s ( ct u d o r P e J, K, L, M H H H L t e l o ) (s ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter u d o DC Input Voltage II DC Input Current PD r P e o s b Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 V mA Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature 200 100 mW mW -55 to +125 °C Storage Temperature -65 to +150 °C let Top Tstg ct Supply Voltage VI s b O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. O RECOMMENDED OPERATING CONDITIONS Symbol VDD 2/7 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4011B DC SPECIFICATIONS Test Condition Symbol IL Parameter Quiescent Current Low Level Output Voltage VOL High Level Input Voltage VIH Low Level Input Voltage VIL Output Drive Current IOH Output Sink Current IOL Input Leakage Current Input Capacitance II CI |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Output Voltage VOH VO (V) VI (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 r P e