2SD788

2 S For low-frequency power amplification For stroboscope B Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 C 2SD788 4.0±0.2 5.1±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. A 0.7±0.1 K D E G 0.7±0.2 N ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 20 6 2 Unit V F 0.45+0.15 –0.1 H 2.5+0.6 –0.2 2.5+0.6 –0.2 F V 1 L 23 2.3±0.2 C V A 1 2 3 DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 1.00 E 1.27 F G +0.15 0.85 0.45–0.1 0.45 H 14.00 + 0.50 J 0.55 MAX K 2.30 L M 0.45 MAX N 1.00 J 12.9±0.5 6 900 150 −55 to +150 A mW °C °C 1. EMITTER 2. COLLECTOR 3. BASE 1: Emitter 2: Collector 3: Base TO-92 Package M TO-92 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO VEBO ICBO ICEO IEBO hFE1 * Conditions IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 16 V, IE = 0 VCE = 10 V, IB = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1A VCE = 2 V, IC = 1 A IC = 1 A, IB = 0.1 A VCB = 2 V, IC = 1 0 mA VCB = 10 V, IE = 0, f = 1 MHz Min 20 6 Typ Max Unit V V µA µA µA 2 1 0.2 10 0 150 0.3 100 20 700 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Note) 1. Rank classification 2. CLASSIFICATION OF RANK RANGE VCE(sat) fT Cob V MHz PF hFE2 A 100-300 .....B 250-500 ....C 400-700 1 Silicon NPN epitaxial planar type Maximum Collector Dissipation Curve Collector Power Dissipation PC (W) 1.2 Collector Current IC (mA) 100 0.3 2SD788 Typical Output Characteristics 80 60 40 20 0.25 0.2 0.8 0.15 0.1 0.4 0.05 mA IB = 0 0 50 100 Ambient Temperature Ta (°C) 150 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 1,000 15 10 5 mA Collector Current IC (mA) 300 100 30 10 3 1 Typical Output Characteristics 2.0 1.6 1.2 0.8 0.4 IB = 0 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 10,000 DC Current Transfer Ratio hFE 3,000 1,000 300 100 30 10 –25 Pulse VCE = 2 V Ta = 75°C 25 20 Collector Current IC (A) VCE = 2 V Ta = 75°C 25 –25 PC =0 .9 W 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 Collector to Emitter Saturation Voltage VCE(sat) (V) Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage VBE(sat) (V) 3.0 1.0 0.3 0.1 0.03 0.01 0.003 IC = 10 IB VBE(sat) VCE(sat) 1 3 10 30 100 300 Collector Current IC (mA) 1,000 3 10 30 100 300 1,000 3,000 Collector Current IC (mA) 2