BTA06

® s 6A TRIACS S BTA/BTB06 Series A2 MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IG (Q1) Value 6 600 and 800 5 to 50 Unit A V G A1 A2 mA DESCRIPTION Suitable for AC switching operations, the BTA/ BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,... The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards . ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) Parameter RMS on-state current (full sine wave) A1 A2 G A1 A2 G TO-220AB Insulated (BTA06) TO-220AB (BTB06) Value TO-220AB Tc = 110°C 6 Tc = 105°C t = 20 ms t = 16.7 ms 60 63 21 Tj = 125°C Tj = 125°C Tj = 125°C 50 4 1 - 40 to + 150 - 40 to + 125 Unit A TO-220AB Ins. ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz A I ²t dI/dt IGM PG(AV) Tstg Tj tp = 10 ms F = 120 Hz tp = 20 µs A² s A/µs A W °C A 1 BTA/BTB06 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol Test Conditions Quadrant TW IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2) VD = 12 V RL = 30 Ω I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber Tj = 125°C Tj = 125°C Tj = 125°C MIN. MIN. MAX. 10 10 15 20 2.7 1.2 15 25 30 40 3.5 2.4 5 BTA/BTB06 SW 10 1.3 0.2 35 50 60 400 3.5 50 70 80 1000 5.3 V/µs A/ms CW 35 BW 50 mA V V mA mA Unit VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 100 mA IG = 1.2 IGT ■ STANDARD (4 Quadrants) Symbol Test Conditions Quadrant BTA/BTB06 C IG (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C I - III - IV II MIN. MIN. RL = 30 Ω I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/µs V/µs B 50 100 mA V V mA mA Unit (dV/dt)c (2) (dI/dt)c = 2.7 A/ms STATIC CHARACTERISTICS Symbol VT (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 5.5 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 60 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM 2 BTA/BTB06 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P (W) 8 7 6 5 4 3 2 1 0 0 1 2 IT(RMS)(A) Fig. 2: RMS on-state current versus case temperature (full cycle). IT(RMS) (A) 7 BTB 6 5 4 3 2 1 Tc(°C) BTA 3 4 5 6 0 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+0 Zth(j-c) Fig. 4: values). ITM (A) 100 On-state characteristics (maximum Tj max. Vto = 0.85 V Rd = 60 mΩ Tj=Tj max 1E-1 Zth(j-a) 10 tp(s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 VTM(V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) 1000 Tj initial=25°C ITSM (A) 70 60 50 40 30 20 10 0 1 Repetitive Tc=105°C Non repetitive Tj initial=25°C t=20ms One cycle dI/dt limitation: 50A/µs ITSM 100 I²t Number of cycles tp (ms) 10 100 1000 10 0.01 0.10 1.00 10.00 3 BTA/BTB06 Series Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 IGT Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 SW 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.5 IH & IL TW BW/CW 1.0 0.5 Tj(°C) (dV/dt)c (V/µs) 0.0 -40 -20 0 20 40 60 80 100 120 140 1.0 10.0 100.0 Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 (dV/dt)c (V/µs) 1 Tj(°C) 1.0 10.0 100.0 0 0 25 50 75 100 125 4