BUL128

BUL128 s s s s s High Voltage Fast-Switching NPN Power Transistor INTERNAL SCHEMATIC DIAGR NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C 1/5 BUL128 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = - 1.5 V) Emitter-Base Voltage (I C = 0 ) Test Conditions V CE = 7 00 V V CE = 7 00 V I E = 1 0 mA I C = 1 00 mA L = 25 mH T j = 1 25 o C 9 400 Min. Typ. Max. 100 500 Unit µA µA V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) I CEO V CE(sat) ∗ Collector Cut-Off Current (I B = 0 ) Collector-Emitter Saturation Voltage V CE = 4 00 V IC IC IC IC = = = = 0 .5 A 1A 2 .5 A 4A IB IB IB IB = = = = 0 .1 A 0 .2 A 0 .5 A 1A 250 0.7 1 1.5 0.5 1.1 1.2 1.3 10 14 25 IC = 2 A I B2 = - 0.4 A (see fig.2) I B1 = 0 .4 A R BB = 0 Ω (see fig.1) 1.5 0.2 0.6 0.1 28 40 3 0.4 1 0.2 µA V V V V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain I C = 0 .5 A IC = 1 A I C = 2 .5 A I C = 1 0 mA IC = 2 A Group A Group B V CC = 1 25 V I B1 = 0 .4 A Tp = 30 µs IC = 2 A V BE(off) = -5 V V clamp = 2 00 V I B = 0 .1 A I B = 0 .2 A I B = 0 .5 A V CE = 5 V V CE = 5 V h FE ∗ ts tf ts tf RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/5 BUL128 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/5 BUL128 Inductive Load Fall Time Inductive Load Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/5 BUL128 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/5