CR05AS

MCR100 Series i CR05AS Series SCR 0.8 AMPERES RMS 300 thru 800 VOLTS Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic SOT-89 package which is readily adaptable for use in automatic insertion equipment. • Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits • Blocking Voltage to 800 V • On−State Current Rating of 0.8 Amperes RMS at 80°C • High Surge Current Capability — 10 A • Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design • Immunity to dV/dt — 20 V/msec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity G A K • • 2 3 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) CR05AS-3 CR05AS-4 CR05AS-6 CR05AS-8 On-State RMS Current (TC = 80°C) 180° Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width v 1.0 ms) Forward Average Gate Power (TA = 25°C, t = 8.3 ms) Forward Peak Gate Current (TA = 25°C, Pulse Width v 1.0 ms) Reverse Peak Gate Voltage (TA = 25°C, Pulse Width v 1.0 ms) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Voltage(Note 1) Symbol VDRM, VRRM 300 400 600 800 IT(RMS) ITSM 0.8 10 A A Value Unit V SOT-89 PIN ASSIGNMENT 1 2 3 Gate Anode Cathode I2t PGM PG(AV) IGM VGRM TJ Tstg 0.415 0.1 0.10 1.0 5.0 −40 to 110 −40 to 150 A2s W W A V °C °C 4(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. 1 D CR05AS Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient Lead Solder Temperature (t1/16″ from case, 10 secs max) Symbol RqJC RqJA TL Max 75 200 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current(Note 2) TC = 25°C (VD = Rated VDRM and VRRM; RGK = 1 kW) TC = 110°C IDRM, IRRM — — — — 10 100 mA ON CHARACTERISTICS Peak Forward On−State Voltage* (ITM = 1.0 A Peak @ TA = 25°C) Gate Trigger Current (Continuous dc)(Note 3) (VAK = 7.0 Vdc, RL = 100 W) Holding Current(2) (VAK = 7.0 Vdc, Initiating Current = 20 mA) Latch Current (VAK = 7.0 V, Ig = 200 mA) Gate Trigger Voltage (Continuous dc)(Note 3) (VAK = 7.0 Vdc, RL = 100 W) TC = −40°C TC = 25°C TC = 25°C TC = −40°C TC = 25°C TC = −40°C TC = 25°C VTM IGT IH IL VGT — — — — — — — — — 40 0.5 — 0.6 — 0.62 — 1.7 200 5.0 10 10 15 0.8 1.2 V mA mA mA V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C) Critical Rate of Rise of On−State Current (IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA) *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 2. RGK = 1000 W included in measurement. 3. Does not include RGK in measurement. dV/dt di/dt 20 — 35 — — 50 V/ms A/ms Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − + Voltage IDRM at VDRM Forward Blocking Region (off state) 2 CR05AS Series 100 GATE TRIGGER VOLTAGE (VOLTS) 95 90 GATE TRIGGER CURRENT ( m A) 80 70 60 50 40 30 20 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature Figure 2. Typical Gate Trigger Voltage versus Junction Temperature 1000 1000 100 LATCHING CURRENT ( m A) 95 110 HOLDING CURRENT (m A) 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Figure 3. Typical Holding Current versus Junction Temperature Figure 4. Typical Latching Current versus Junction Temperature TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) 120 110 100 90 DC 80 70 60 50 40 0 0.1 30° 60° 90° 120° 0.5 180° 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical RMS Current Derating Figure 6. Typical On−State Characteristics 3