IRF4N60FP

IRF4N60 POWER MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES ‹ ‹ ‹ ‹ ‹ ‹ Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Top View G ATE SOU RCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TJ = 25 (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25 ) JC JA Symbol ID IDM VGS VGSM PD Value 4.0 18 ±20 ±40 96 38 Unit A V V W Continue Non-repetitive TJ, TSTG EAS -55 to 150 80 1.70 62 300 mJ /W TL Page 1 IRF4N60 POWER MOSFET ORDERING INFORMATION Part Number IRF4N60FP Package TO-220 Full Package ....................IRF4N60..............................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF4N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS =600 V, VGS = 0 V) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * Forward Transconductance (VDS = 50 V, ID = 2.0 A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1 ) * (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 0.1 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 2.0 100 -100 4.0 nA nA V Min 600 Typ Max Units V mA ................1.5............... .4 2 2.5 520 125 8.0 12 7.0 19 10 5.0 2.7 2.0 4.5 7.5 730 180 20 20 10 40 20 10 mhos pF pF pF ns ns ns ns nC nC nC nH nH Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/µs) VSD ton trr ** 655 1.5 V ns ns * Pulse Test: Pulse Width 300µs, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 2 IRF4N60 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF4N60 POWER MOSFET PACKAGE DIMENSION TO-220 D A φ F E c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 b b1 c c1 D E E1 e e1 F L L1 L1 L e b1 e1 Front View b A1 c Side View φ TO-220FP C J D Q H R1 .5 0 R1 .5 0 B .1 ²0 .18 R3 0 I A B A C D E E P K O G H I J K M N O P Q 0 .6 R1 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View Page 4