IRF630

IRF630 POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ‹ ‹ ‹ ‹ ‹ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PIN CONFIGURATION TO-220 SYMBOL D Top View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package .....................IRF630................................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed (Note 1) Gate-to-Source Voltage Total Power Dissipation Derate above 25 Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Operating and Storage Temperature Range Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds EAS IAR EAR dv/dt TJ, TSTG JC JA Symbol ID IDM VGS PD Value 9.0 36 ±20 74 0.59 9.0 7.4 5.0 -55 to 150 1.70 62 300 Unit A V W W/ A mJ V/ns /W Continue 250................mJ TL Page 1 IRF630 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF630 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 200V, VGS = 0 V) (VDS = 160V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4) Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 160V, ID = 5.9A VGS = 10 V) (Note 4) (VDD = 100 V, ID = 5.9 A, RG = 12 , RD = 16 ) (Note 4) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Symbol V(BR)DSS IDSS 25 250 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 4.5 7.5 3.8 800 240 76 9.4 28 39 20 43 7.0 23 2.0 100 -100 4.0 0.40 mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 200 Typ Max Units V A Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IF = 5.9A, di/dt = 100A/µs , TJ = 25 (Note 4) IS = 9.0A, VGS = 0 V, TJ = 25 (Note 4) Qrr ton trr VSD 1.1 ** 170 2.2 340 2.0 µC ns V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 50V, starting TJ = 25 , L=4.6mH, RG = 25 , IAS = 9.0A (3) ISD 9.0A, di/dt 120A/µs, VDD V(BR)DSS, TJ 150 (4) Pulse Test: Pulse Width 300µs, Duty Cycle 2% ** Negligible, Dominated by circuit inductance Page 2 IRF630 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A)  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 4.5V 4.5V 1 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10  100 0.1 0.1 20µs PULSE WIDTH TJ = 175°C 1 10  100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID  = 9.3A I D , Drain-to-Source Current (A) 10 TJ = 175 ° C  1 TJ = 25 ° C  0.1 4.0  V DS = 50V 20µs PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0 0.0 -60 -40 -20 0 VGS = 10V  20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Page 3 IRF630 POWER MOSFET 1200 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds Crss = C gd Coss = C + C ds gd 16 ID = 5.4A  1000 12  V DS= 160V V DS= 100V V DS= 40V C, Capacitance(pF) 800 Ciss 600 8 Coss 400 4 200 Crss 0 1 10 100 1000 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 ID , Drain Current (A) 100 TJ = 175 ° C  TJ = 25 ° C   10us 10  100us  1ms 1 1 0.1 0.2 V GS = 0 V  0.4 0.6 0.8 1.0 1.2 0.1  TC = 25 °C TJ = 175 °C Single Pulse 1 10 100  10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Page 4 IRF630 POWER MOSFET RD 12 12 VDS VGS RG D.U.T. + VDD ID , Drain Current (A) ID , Drain Current (A) 9 9 - 10V 6 Pulse Width ≤ 1 µ s Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 3 0 0 25 25 50 50 75 100 125 150 125 150 TC 75 , Case100 Temperature ( ° C) TC , Case Temperature ( ° C) 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.1 0.0001 0.001 0.01  PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Page 5 IRF630 POWER MOSFET EAS , Single Pulse Avalanche Energy (mJ) 200 15V VDS L D R IV E R 150  ID 2.2A 3.8A BOTTOM 5.4A TOP RG 20V D .U .T IA S tp + - VD D A 100 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Page 6