IRF634B

IRF634B POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ‹ ‹ ‹ ‹ ‹ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PIN CONFIGURATION TO-220 SYMBOL D Top View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package IRF634B...............................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed (Note 1) Gate-to-Source Voltage Total Power Dissipation Derate above 25 Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Operating and Storage Temperature Range Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds EAS IAR EAR dv/dt TJ, TSTG JC JA Symbol ID IDM VGS PD Value 8.5 36 ±30 74 0.59 200 8.5 7.4 5.5 -55 to 150 1.70 62 300 Unit A V W W/ mJ A mJ V/ns /W Continue TL Page 1 IRF634B POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF634B Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 250V, VGS = 0 V) (VDS = 160V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4) Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 160V, ID = 5.9A VGS = 10 V) (Note 4) (VDD = 100 V, ID = 5.9 A, RG = 12 , RD = 16 ) (Note 4) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Symbol V(BR)DSS IDSS 10 250 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 4.5 7.5 2.0 100 -100 4.0 nA nA V Min 250 Typ Max Units V A ...............0.35.............. 0.45 3.8 780 100 26 9.4 28 39 20 43 7.0 23 mhos pF pF pF ns ns ns ns nC nC nC nH nH Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IF = 5.9A, di/dt = 100A/µs , TJ = 25 (Note 4) IS = 9.0A, VGS = 0 V, TJ = 25 (Note 4) Qrr ton trr VSD 1.1 ** 170 2.2 340 1.5 µC ns V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) (3) (4) VDD = 50V, starting TJ = 25 , L=4.9mH, RG = 25 , IAS = 8.5A ISD 8.5A, di/dt 300A/µs, VDD V(BR)DSS, TJ 22% 150 Pulse Test: Pulse Width 300µs, Duty Cycle ** Negligible, Dominated by circuit inductance Page 2 IRF634B POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A)  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 4.5V 1 4.5V 0.1 0.01 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 175 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.9A  I D , Drain-to-Source Current (A) 3.0 10 TJ = 175 ° C  2.5 2.0 1.5 1 TJ = 25 ° C  1.0 0.1 4.0  V DS = 50V 20µs PULSE WIDTH 7.0 8.0 5.0 6.0 9.0 0.5 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 7P Page 3 IRF634B POWER MOSFET 1200 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 4.8A  1000 VGS , Gate-to-Source Voltage (V) 16  VDS = 200V VDS = 125V VDS = 50V C, Capacitance(pF) 800 Ciss 12 600 Coss 400 8 Crss 200 4 0 1 10 100 1000 0 0 10 FOR TEST CIRCUIT  SEE FIGURE 13 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) ID , Drain-to-Source Current (A) 10 10 100µsec TJ = 175 ° C  1 1 TJ = 25 ° C  1msec Tc = 25°C Tj = 175°C Single Pulse 1 10 100 0.1 0.2 V GS = 0 V  0.4 0.6 0.8 1.0 1.2 10msec 1000 0.1 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area P Page 4 IRF634B POWER MOSFET VDS VGS 8.0 RD D.U.T. + RG I D , Drain Current (A) -VDD 6.0 10V Pulse Width ≤ 1 µ s Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001 0.1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case P Page 5 IRF634B POWER MOSFET 1 5V EAS , Single Pulse Avalanche Energy (mJ) VDS L D R IV E R 160  TOP BOTTOM ID 2.0A 3.4A 4.8A RG VV 2 0GS D .U .T IA S tp 0 .0 1 Ω + V - DD 120 A 80 Fig 12a. Unclamped Inductive Test Circuit 40 V (B R )D SS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 10 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit P Page 6