IRF730

IRF730 POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220 SYMBOL D Top View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package IRF730..................................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed (Note 1) Gate-to-Source Voltage Total Power Dissipation Derate above 25 Single Pulse Drain-to-Source Avalanche Energy Operating and Storage Temperature Range Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds T J = 25 EAS TJ, TSTG JC JA Symbol ID IDM VGS PD Value 6.0 21 ±20 96 0.77 180 -55 to 150 1.70 62 300 Unit A V W W/ mJ Continue (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25 ) /W TL Page 1 IRF730 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF730 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) IDSS 25 ) IGSSF IGSSR VGS(th) A) RDS(on) gFS Ciss Coss Crss td(on) (VDD = 200 V, ID = 6 A, RG = 9.1 , VGS = 10 V) (Note 4) tr td(off) tf (VDS = 320V, ID = 6A VGS = 10 V) (Note 4) Qg Qgs Qgd LD LS 2.9 515 185 15 7 11 19 10 9.5 2 3 4.5 7.5 720 260 30 10 20 40 20 1.0 mhos pF pF pF ns ns ns ns nC nC nC nH nH 2.0 100 100 -100 4.0 nA nA V A Drain-Source Leakage Current (VDS = 400V, VGS = 0 V) (VDS = 400V, VGS = 0 V, TJ = 125 (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 Static Drain-Source On-Resistance (VGS = 10 V, ID = 3A) (Note 4) Forward Transconductance (VDS = 50V, ID = 3 A) (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage Note (1) (2) (3) (4) Repetitive rating; pulse width limited by max. junction temperature VDD = 50V, starting TJ = 25 ISD 4.5A, di/dt Pulse Test: Pulse Width , L=24mH, RG = 25 , IAS = 4.5A V(BR)DSS, TJ 2% 150 300µs, Duty Cycle 75A/µs, VDD IF = 6A, di/dt = 100A/µs , TJ = 25 (Note 4) IS = 6A, VGS = 0 V, TJ = 25 (Note 4) Qrr ton trr VSD 1.6 ** 270 1.5 ns V µC (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Gate-Source Leakage Current-Forward Symbol V(BR)DSS Min 400 Typ Max Units V ** Negligible, Dominated by circuit inductance Page 2 IRF730 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 12 3 Normalized Drain-to-Source Resistance, Rdon 10 Drain Current, Id (A) Tc = 25 C Pulse width = 20 us Vgs = 10V (Top), 8V, 7V, 6V 5.5V, 5V, 4.5V (Bottom) 2.5 Vgs = 10 V Id = 5.5 A 8 2 6 1.5 SmartStar Technology, Inc. 2 4 1 2 0.5 0 0.1 1 Drain-to-Source Voltage, Vds (V) 10 0 -60 -20 20 60 100 140 Junction Tem pe rature , Tj (C) Figure 1. Id versus Vds Curve 10000 Figure 2. Rdon versus Tj Curve 12 Gate-to-Source Voltage, Vgs (V) 10 Vds = 320 V Id = 5.5 A 1000 Capacitor (pF) Ciss =Cgd+Cgs 8 Cos s=Cds+Cgd 100 6 4 10 2 Tc = 25 C f = 1 MHz Vgs = 0 V Crss=Cgd 0 0.00 1 10.00 20.00 30.00 1.0 10.0 100.0 1000.0 Total Gate Charge, Qg (nC) Drain-to-Source Voltage , Vds (V) Figure 3. Vgs versus Qg Curve Figure 4. Capacitor versus Vds Curve 10 Normalized thermal impedance, Zthjc Duty Cycle = 0.5 (Top), 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse (Bottom) 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (second) Figure 5. Transient thermal impedance Curve Page 3