IRF7N60

IRF7N60 POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ‹ ‹ FEATURES ‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds (1) Pulse Width and frequency is limited by TJ(max) and thermal response TJ = 25 (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25 ) JC JA Symbol ID IDM VGS VGSM PD Value 7.0 20 ±20 ±40 147 50 Unit A V V W Continue Non-repetitive TJ, TSTG EAS -55 to 150 245 1.0 62.5 260 mJ /W TL Page 1 IRF7N60 POWER MOSFET ORDERING INFORMATION Part Number ....................IRF7N60FP Package TO-220 Full Pak IRF7N60...............................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CMT07N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * Forward Transconductance (VDS = 40 V, ID = 3.5A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 7.0 A, VGS = 10 V, RG = 9.1 ) * (VDS = 480 V, ID = 7.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 100 100 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 4.0 1380 115 23 30 80 125 85 38 6.4 15 4.5 7.5 1800 150 30 70 170 260 180 50 2.0 100 100 4.0 1.2 mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 600 Typ Max Units V A Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS =7.0 A, dIS/dt = 100A/µs) VSD ton trr ** 415 1.4 V ns ns * Pulse Test: Pulse Width 300µs, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 2 IRF7 60 N POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF7 60 N POWER MOSFET Page 4 IRF7 60 N POWER MOSFET Page 5 IRF7N60 POWER MOSFET PACKAGE DIMENSION TO-220 D A φ F E c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 L1 b b1 c c1 D L E E1 e e1 F L e b1 e1 Front View b A1 c Side View L1 φ TO-220FP C J D Q H R1 .5 0 R1 .5 0 B .1 ²0 .18 R3 0 I A B A C D E E P K O G H I J K M N O P Q 0 .6 R1 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View Page 6