IRF820

厂商：
SUNTAC
封装：
描述：
IRF820 - POWER MOSFET - Suntac Electronic Corp.

数据手册：

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数据手册
价格&库存

IRF820 数据手册

IRF820 POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP TO-252 TO-251 SYMBOL N-Channel MOSFET Front View Front View Front View D SO URCE SO URC E DR AIN G ATE DRAIN G ATE GATE SOURCE DRAIN G 1 1 2 3 2 3 1 2 3 S ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation TO-251/TO-252 TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TJ = 25 (VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25 ) JC JA Symbol ID IDM VGS VGSM PD Value 2.0 9.0 ±20 ±40 60 60 32 Unit A V V W Continue Non-repetitive TJ, TSTG EAS -55 to 150 20 1.0 62.5 260 mJ /W TL Page 1 IRF820 POWER MOSFET ORDERING INFORMATION Part Number Package IRF820-251............................................TO-251 ..................IRF820-252............................................TO-252 ..................IRF820-220............................................TO-220 ..................IRF820-220FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . IRF820 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.2A) * Forward Transconductance (VDS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 50 V, ID = 1.0A) * (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 2.0 A, VGS = 10 V, RG = 18 ) * (VDS = 400 V, ID = 2.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 0.1 1.0 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 1.4 435 56 9.2 12 21 30 24 13 2.0 6.0 4.5 7.5 22 2.0 100 100 4.0 4.4 mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 600 Typ Max Units V mA Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 2.0 A, VGS = 0 V, dIS/dt = 100A/µs) VSD ton trr ** 340 1.5 V ns ns * Pulse Test: Pulse Width 300µs, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 2 IRF820 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF820 POWER MOSFET PACKAGE DIMENSION TO-220 D A φ F E c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 b b1 c c1 D E E1 e e1 F L L1 L1 L e b1 e1 Front View b A1 c Side View φ TO-220FP C J D Q H R1 .5 0 R1 .5 0 B .1 ²0 .18 R3 0 I A B A C D E E P K O G H I J K M N O P Q 0 .6 R1 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View Page 4 IRF820 POWER MOSFET PACKAGE DIMENSION TO-252 B R 4 1 2 3 C E V PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE K S L G U D J H TO-251 B R C E A PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE V U J H A 4 1 2 3 K L G D S Page 5

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IRF820

物料型号： - IRF820 POWER MOSFET

器件简介： IRF820是一款高压MOSFET，采用先进的终端方案，提供增强的电压阻断能力，同时不会随时间降低性能。该MOSFET设计用于承受雪崩和换向模式下的高能量。新型能效设计还提供了一个漏源二极管，具有快速恢复时间。适用于电源、转换器和PWM电机控制等高压、高速开关应用，特别适用于桥式电路，其中二极管速度和换向安全操作区域至关重要，并提供额外的安全边际以应对意外电压瞬变。

引脚分配： - TO-252视图：PIN 1为栅极(GATE)，PIN 2为漏极(DRAIN)，PIN 3为源极(SOURCE)。 - TO-251视图：PIN 1为栅极(GATE)，PIN 2为漏极(DRAIN)，PIN 3为源极(SOURCE)。 - TO-220/TO-220FP视图：PIN 1为栅极(GATE)，PIN 2为漏极(DRAIN)，PIN 3为源极(SOURCE)。

参数特性： - 漏源击穿电压(VBROSS)：600V - 漏源漏电流(Ioss)：0.1mA至1.0mA - 栅源漏电流(IGssF)：100nA - 栅源漏电流(IGSSR)：100nA - 栅阈值电压(VGs(h))：2.0V至4.0V - 静态漏源导通电阻(Rps(on))：4.4mΩ至5mΩ - 前向跨导(gFs)：1.4mhos - 输入电容(CIss)：435pF - 输出电容(Coss)：56pF - 反向传输电容(Cr8s)：9.2pF - 导通延迟时间(td(on))：12ns - 上升时间(tr)：21ns - 关闭延迟时间(td(otr))：30ns - 下降时间(tf)：24ns - 总栅电荷(Qg)：13nC至22nC - 栅源电荷(Qgs)：2.0nC - 栅漏电荷(Qgd)：6.0nC - 内部漏感(Lo)：4.5nH - 内部源感(Ls)：7.5nH - 源漏二极管特性：正向导通电压(VsD)：1.5V，反向恢复时间(tr)：340ns

功能详解： IRF820具有鲁棒的高电压终止、雪崩能量规定、源到漏二极管恢复时间与离散快速恢复二极管相当，二极管被表征用于桥式电路，漏源导通电阻(IDSS)和漏源导通电压(VDS(on))在提升温度下被规定。

应用信息： IRF820适用于电源、转换器和PWM电机控制等高压、高速开关应用，特别适用于桥式电路。

封装信息： - TO-251 - TO-252 - TO-220 - TO-220 Full Package (TO-220FP)

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