IRF830

IRF830 POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES ‹ ‹ ‹ ‹ ‹ Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Top View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number .................IRF830FP Package TO-220FP .................IRF830....................................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed (Note 1) Gate-to-Source Voltage Total Power Dissipation Derate above 25 Single Pulse Avalanche Energy (Note 2) Operating and Storage Temperature Range Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds EAS TJ, TSTG JC JA Symbol ID IDM VGS PD Value 5.0 18 ±20 96 0.77 125 -55 to 150 1.70 62 300 Unit A V W W/ mJ /W Continue TL Page 1 IRF830 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF830 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 500V, VGS = 0 V) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3) Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 400V, ID = 5A VGS = 10 V) (Note 3) (VDD = 250 V, ID = 5 A, RG = 9.1 , VGS = 10 V) (Note 3) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Symbol V(BR)DSS IDSS 25 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 2.8 520 170 11 7.0 9.0 20 10 10 2 3 4.5 7.5 730 240 20 10 20 40 20 2.0 100 -100 4.0 1.5 mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 500 Typ Max Units V A Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IS = 5A, VGS = 0 V IF = 5A, di/dt = 100A/µs , TJ = 25 Qrr ton trr VSD 1.8 ** 415 1.5 µC ns V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25 (3) Pulse.Test:.Duty Cycle 2% , Pulse.Width 300µs ** Negligible, Dominated by circuit inductance P Page 2 IRF830 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF830 POWER MOSFET PACKAGE DIMENSION TO-220 D A φ F E c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 b b1 c c1 D E E1 e e1 F L L1 L1 L e b1 e1 Front View b A1 c Side View φ TO-220FP C J D Q H R1 .5 0 R1 .5 0 B .1 ²0 .18 R3 0 I A B A C D E E P K O G H I J K M N O P Q 0 .6 R1 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View Page 4