IRF840

IRF840 POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ‹ ‹ FEATURES ‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Top View G ATE SOU RCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TJ = 25 (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25 ) JC JA Symbol ID IDM VGS VGSM PD Value 8.0 32 ±20 ±40 125 40 Unit A V V W Continue Non-repetitive TJ, TSTG EAS -55 to 150 320 1.0 62.5 260 mJ /W TL Page 1 IRF840 POWER MOSFET ORDERING INFORMATION Part Number ....................IRF840FP Package TO-220 Full Package IRF840.................................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . C IRF840 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 8.0 A) Forward Transconductance (VDS = 50 V, ID = 4.0A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 400 V, ID = 8.0 A, VGS = 10 V)* (RGo + C17n = 9.1 ) * (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Symbol V(BR)DSS IDSS 0.25 1.0 IGSSF IGSSR VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 4.9 1450 190 45.4 15 33 40 32 40 8.0 17 4.5 7.5 1680 246 144 50 72 150 60 64 5.0 2.0 100 100 4.0 0.8 7.2 V mmhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 500 Typ Max Units V mA Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 8.0 A, VGS = 0 V, dIS/dt = 100A/µs) VSD ton trr ** 320 1.5 V ns ns * Pulse Test: Pulse Width 300µs, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 2 IRF840 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF840 POWE MOSFET Page 4 IRF840 POWER MOSFET Page 5