X0205MN

NCR169D A Advance Information General Purpose STC X0205MN Sensitive Gate Silicon Controlled Rectifier SCR 1.25 AMPERES RMS 600 VOLTS Reverse Blocking Thyristor PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic SOT-223 package. • Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits • On–State Current Rating of 1.25 Amperes RMS at 80°C • Surge Current Capability – 20 Amperes • Immunity to dV/dt – 20 V/µsec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity • Blocking Voltage to 600 Volts MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage (Note 1.) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) On-State RMS Current (TC = 80°C) 180° Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 10 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width v 1.0 µs) Forward Average Gate Power (TA = 25°C, t = 20 ms) Forward Peak Gate Current (TA = 25°C, Pulse Width v 1.0 µs) Reverse Peak Gate Voltage (TA = 25°C, Pulse Width v 1.0 µs) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM Value 600 Unit Volts 1 1.25 20 Amp Amps 2 3 4 G A K 4 1 23 SOT–223 CASE 318E STYLE 10 PIN ASSIGNMENT Cathode Anode Gate Anode I2t PGM PG(AV) IGM VGRM TJ Tstg 0.415 0.1 0.20 1.2 5.0 –40 to 110 –40 to 150 A2s Watt Watt Amp Volts °C °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2000 1 December, 2000 – Rev. 0 Publication Order Number: NCR169D/D X0205MN THERMAL CHARACTERISTICS Characteristic Thermal Resistance – Junction to Case – Junction to Ambient Lead Solder Temperature (t1/16″ from case, 10 secs max) Symbol RθJC RθJA TL Max 75 200 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 1.) (VD = Rated VDRM and VRRM; RGK = 1.0 kΩ) TC = 25°C TC = 110°C IDRM, IRRM – – – – 10 0.1 µA mA ON CHARACTERISTICS Peak Forward On–State Voltage(*) (ITM = 1.0 Amp Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms) Holding Current (Note 2.) (VAK = 12 V, IGT = 0.5 mA) Latch Current (VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k) Gate Trigger Voltage (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms, IGT = 10 mA) TC = 25°C TC = 25°C TC = –40°C TC = 25°C TC = –40°C TC = 25°C TC = –40°C VTM IGT IH IL VGT – – – – – – – – – 8 0.5 – 0.6 – 0.62 – 1.7 20 5.0 10 10 15 0.8 1.2 Volts µA mA mA Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110°C) Critical Rate of Rise of On–State Current (IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA) *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 1. RGK = 1000 Ohms included in measurement. 2. Does not include RGK in measurement. dV/dt 20 35 – V/µs di/dt – – 50 A/µs 2 X0205MN Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode – + Voltage IDRM at VDRM Forward Blocking Region (off state) 100 GATE TRIGGER VOLTAGE (VOLTS) 95 90 GATE TRIGGER CURRENT ( m A) 80 70 60 50 40 30 20 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature Figure 2. Typical Gate Trigger Voltage versus Junction Temperature 3 X0205MN 1000 1000 100 LATCHING CURRENT ( m A) 95 110 HOLDING CURRENT (m A) 100 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Figure 3. Typical Holding Current versus Junction Temperature Figure 4. Typical Latching Current versus Junction Temperature TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 120 110 100 90 DC 80 70 60 50 40 0 0.1 30° 60° 90° 120° 0.5 180° 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical RMS Current Derating Figure 6. Typical On–State Characteristics 4