2N7002

2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V RDS(ON) (max) 7.5Ω ID(ON) (min) 0.5A Order Number / Package TO-236AB* 2N7002 Product marking for TO-236AB: 702p where p = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Driver (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Drain Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 30V -55°C to +150°C 300°C Gate Source TO-236AB (SOT-23) top view Note: See Package Outline section for dimensions. 7-9 2N7002 Thermal Characteristics Package TO-236AB ID (continuous)* 115mA ID (pulsed) 800mA Power Dissipation @ TA = 25°C 0.36W °C/W 200 θjc °C/W 350 θja IDR* 115mA IDRM 800mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 60 1.0 2.5 -5.5 ±100 1 500 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop Reverse Recovery Time 1.2 400 80 50 25 5 20 20 V ns ns VDD = 30V, ID = 0.2A, RGEN = 25Ω ISD = 0.2A, VGS = 0V ISD = 0.8A, VGS = 0V pF VGS = 0V, VDS = 25V, f = 1MHz 500 7.5 7.5 1.0 Typ Max Unit V V mV/°C nA µA µA mA Ω Ω %/°C m Ω Conditions ID = 10µA, VGS = 0V VGS = VDS, ID = 250µA ID = 250µA, VGS = VDS VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A VDS = 25V, ID = 0.5A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL PULSE GENERATOR Rgen OUTPUT 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT 7-10 2N7002 Typical Performance Curves Output Characteristics 2.0 2.0 Saturation Characteristics VGS = 1.6 10V 9V 1.6 VGS = 10V 9V ID (amperes) ID(amperes) 1.2 1.2 8V 0.8 8V 0.8 7V 6V 7V 6V 5V 4V 3V 0 2 4 6 8 10 0.4 5V 4V 3V 0 10 20 30 40 50 0.4 0 0 VDS (volts) Transconductance vs. Drain Current 0.5 0.5 VDS (volts) Power Dissipation vs. Temperature 0.4 VDS = 25V 0.4 GFS (siemens) 25°C 0.2 PD (watts) 0.3 TA = -55°C SOT-23 0.3 125°C 0.2 0.1 0.1 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 SOT-23 (pulsed) 1.0 TA(°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 SOT-23 (DC) ID (amperes) 0.1 0.6 0.4 0.01 TA = 25°C 0.001 0.1 1 10 100 0.2 SOT-23 TA = 2 5 °C PD = 0 .36W 0.01 0.1 1.0 10 0 0.001 VDS (volts) tp (seconds) 7-11 2N7002 Typical Performance Curves BVDSS Variation with Temperature 1.1 10 On-Resistance vs. Drain Current 8 VGS = 5V BVDSS (normalized) RDS(ON) (ohms) 6 VGS = 10V 1.0 4 2 0.9 -50 0 50 100 150 0 0 0.5 1.0 1.5 2.0 2.5 Tj (°C) Transfer Characteristics 2.0 ID (amperes) VGS(th) and RDS(ON) Variation with Temperature 2.0 VDS = 25V 1.6 1.4 RDS(ON) @ 10V, 0.5A 1.6 1.2 1.2 1.0 0.8 0.8 1.2 25°C 0.8 VGS(th) @ 1mA 0.4 125°C 0.4 0.6 0 0 2 4 6 8 10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 50 10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz 8 VDS = 10V C (picofarads) VGS (volts) CISS 25 90 pF 6 4 COSS 2 30 pF CRSS 0 0 10 20 30 40 0 0 0.2 0.4 0.6 VDS = 40V 0.8 1.0 VDS (volts) QG (nanocoulombs) 7-12 RDS(ON) (normalized) VGS(th) (normalized) TA = -55°C ID (amperes)