LP0701N3

LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BVDGS -16.5V RDS(ON) (max) 1.5Ω ID(ON) (min) -1.25A VGS(th) (max) -1.0V Order Number / Package TO-92 LP0701N3 SO-8 LP0701LG Die LP0701ND Features Ultra low threshold High input impedance Low input capacitance Fast switching speeds Low on resistance Freedom from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Advanced MOS Technology These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. The low threshold voltage and low onresistance characteristics are ideally suited for hand held battery operated applications. Applications Logic level interfaces Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers SGD Package Options (Note 1) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* *Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 10V -55°C to +150°C 300°C NC NC S G 1 2 3 4 TO-92 8 7 6 5 D D D D SO-8 top view Note: See Package Outline section for dimensions. 7-23 LP0701 Thermal Characteristics Package ID (continuous)* -0.5A -0.7A ID (pulsed)* -1.25A -1.25A Power Dissipation @ TC = 25°C 1W 1.5W† °C/W 125 83 θjc °C/W 170 104† θja IDR -0.5A -0.7A IDRM* -1.25A -1.25A TO-92 SO-8 * † ID (continuous) is limited by max rated Tj. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -16.5 -0.5 -0.7 -1.0 -4.0 -100 -100 -1.0 -0.4 ID(ON) ON-State Drain Current -0.6 -1.25 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop -1.2 500 700 120 100 40 250 125 60 20 20 30 30 -1.5 V VGS = 0V, ISD = -500mA ns VDD =-15V, ID = -1.25A, RGEN = 25Ω pF VGS = 0V, VDS = -15V, f = 1MHz -1.0 -2.3 2.0 RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD 1.7 1.3 4.0 2.0 1.5 0.75 %/°C m Ω A Ω Typ Max Unit V V mV/°C nA nA mA A Conditions VGS = 0V, ID = -1mA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = ±10V, VDS = 0V VDS = -15V, VGS = 0V VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C VGS = VDS = -2V VGS = VDS = -3V VGS = VDS = -5V VGS = -2V, ID = -50mA VGS = -3V, ID = -150mA VGS = -5V, ID = -300mA VGS = -5V, ID = -300mA VDS = -15V, ID = -1A Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V t(ON) td(ON) 0V 90% OUTPUT VDD 10% 10% VDD 90% tr 90% t(OFF) td(OFF) tF INPUT RL D.U.T. OUTPUT 10% PULSE GENERATOR Rgen 7-24 LP0701 Typical Performance Curves Output Characteristics -2.5 -2.5 Saturation Characteristics VGS = -5V -2.0 -2.0 VGS = -5V -4V ID (amperes) -1.5 ID (amperes) -1.5 -4V -1.0 -3V -1.0 -3V -0.5 -2V -1V -0.5 -2V -1V 0 0 -4 -8 -12 -16 0 0 -1 -2 -3 -4 -5 VDS (volts) Transconductance vs. Drain Current 1.0 2 VDS (volts) Power Dissipation vs. Case Temperature VDS = -15V 0.8 TA = -55°C SO-8 TA = 25°C TA = 125°C GFS (siemens) 0.6 PD (watts) 1 TO-92 0.4 0.2 0 0 0 -1.0 -2.0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 TO-92/SO-8 (pulsed) ID (amperes) -1.0 0.6 TO-92 (DC) -0.1 0.4 SO-8 (DC) TO-92 TC = 25°C PD = 1W 0.2 TC = 25°C -0.01 -0.1 -1.0 -10 -100 0 0.001 0.01 0.1 1.0 10 VDS (volts) tP (seconds) 7-25 LP0701 Typical Performance Curves BVDSS Variation with Temperature 10 1.1 8 On-Resistance vs. Drain Current VGS = -2V BVDSS (normalized) VGS = -3V RDS(ON) (ohms) 6 VGS = -5V 1.0 4 2 0.9 0 -50 0 50 100 150 0 -1 -2 -3 Tj (°C) Transfer Characteristics -2 1.4 ID (amperes) V(th) and RDS Variation with Temperature 1.6 VDS = -15V VGS(th) (normalized) 1.2 V(th) @ -1mA 1.4 TA = 25°C -1 1.0 1.2 TA = 125°C 0.8 1.0 0.6 RDS(ON) @ -5V, -300mA 0.8 0 0.4 0 -1 -2 -3 -4 -5 -50 0 50 100 150 0.6 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz -8 VDS = -10V C (picofarads) VGS (volts) CISS 100 -6 -20V 238pF COSS -4 CRSS -2 0 0 -5 -10 -15 0 0 CISS = 115pF 1 2 3 4 5 VDS (volts) QG (nanocoulombs) 7-26 RDS(ON) (normalized) TA = -55°C ID (amperes)