TC1550

TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage General Description The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode (normally-off) transistors utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ► ► ► ► ► High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Typical Application Circuit +250V +12V VDD1 OE 3.3V CMOS Logic Inputs INA OUTA 10nF 250V 10nF 250V Piezoelectric Transducer VDD2 VH 0.47µF 15V INB OUTB GND VSS1 VSS2 VL 15V -250V Supertex MD1210K6 Supertex TC1550TG TC1550 Ordering Information Device TC1550 BVDSS/BVDGS N-Channel 500V P-Channel -500V 60Ω RDS(ON) (Max) N-Channel P-Channel 125Ω Package Option 8-Lead SO TC1550TG-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS ±20V -55°C to + 150°C 300°C Pin Configuration SN 1 N-Channel GN 2 7 DN 8 DN SP 3 P-Channel 6 DP Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note: 1. Distance of 1.6mm from case for 10 seconds. GP 4 5 DP 8-Lead SO Package (Top View) N-Channel Electrical Characteristics (T = 25°C unless otherwise specified) A Symbol Parameter Min Typ Max Units Conditions BVDSS VGS(th) ΔVGS(th) IGSS IDSS Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Current Zero Gate Voltage Drain Current 500 2.0 150 50 -3.8 100 350 45 40 1.0 100 4.0 -5.0 100 10 1.0 60 1.7 - V V mV/ C nA µA mA mA O VGS = 0V, ID = 1mA VGS = VDS, ID =1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID =50mA ID(ON) RDS(ON) ΔRDS(ON) GFS On-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Ω %/OC mmho 2 TC1550 N-Channel Electrical Characteristics (cont.) Symbol CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Parameter Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min Typ 45 8.0 2.0 0.8 300 Max 55 10 5.0 10 15 10 10 V ns VGS = 0V, ISD = 500mA VGS = 0V, ISD = 500mA ns VDD = 25V, ID = 150mA, RGEN = 25Ω pF Units Conditions VGS = 0V, VDS = 25V, f = 1MHz P-Channel Electrical Characteristics (T = 25°C unless otherwise specified) A Symbol Parameter Min Typ Max Units Conditions BVDSS VGS(th) ΔVGS(th) IGSS IDSS Drain-to-SourceBreakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Current Zero Gate Voltage Drain Current -500 -2.0 -100 25 - 3.5 -90 -240 85 80 0.85 40 40 10 3.0 5.0 8.0 8.0 5.0 -0.8 200 -4.5 6.0 100 -10 -1.0 125 70 20 10 10 10 15 16 -1.5 - V V mV/ C nA µA mA mA O VGS = 0V, ID = -1mA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C VGS = -5.0V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5.0V, ID = -5.0mA VGS = -10V, ID = -10mA VGS = -10V, ID = -10mA VDS = -25V, ID = -10mA VGS = 0V, VDS = -25V, f = 1MHz ID(ON) RDS(ON) ΔRDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr On-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Ω %/OC mmho pF ns VDD = -25V, ID = -100mA, RGEN = 25Ω VGS = 0V, ISD = -100mA VGS = 0V, ISD = -100mA V ns Notes: (1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) (2) All AC parameters sample tested. 3 TC1550 N-Channel Switching Waveforms and Test Circuit VDD 10V Input 0V 10% t(ON) td(ON) VDD Output 0V 90% 90% 10% tr t(OFF) td(OFF) tf 10% Input 90% Pulse Generator RGEN D.U.T. RL OUTPUT P-Channel Switching Waveforms and Test Circuit 0V Input -10V 90% t(ON td(ON) 0V Output VDD ) 10% Pulse Generator RGEN D.U.T. t(OFF) tr 90% 10% td(OFF) 90% RL 10% VDD tf Input OUTPUT 4 TC1550 8-Lead SO (TG) Package Outline 4.90 ± 0.10 8 6.00 ± 0.20 3.90 ± 0.10 Note 2 1 Top View 0.17 - 0.25 1.75 MAX 1.25 MIN 5° - 15° (4 PLCS) 45° 0.25 - 0.50 Note 2 0° - 8° 0.10 - 0.25 1.27BSC 0.40 - 1.27 0.31 - 0.51 Side View Notes: 1. All dimensions in millimeters. Angles in degrees. 2. If the corner is not chamfered, then a Pin 1 identifier must be located within the area indicated. End View (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TC1550 NR011707 5