TN2101ND

– – ETE TN2101 OBSOL Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 15V RDS(ON) (max) 7.0Ω VGS(th) (max) 1.0V Order Number / Package TO-236AB* TN2101K1 Die TN2101ND Product marking for SOT-23: N1U❋ where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. 7 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Drain Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ±15V -55°C to +150°C 300°C Gate Source TO-236AB (SOT-23) top view Note: See Package Outline section for dimensions. 7-67 TN2101 Thermal Characteristics Package TO-236AB ID (continuous)* 0.17A ID (pulsed) 0.8A Power Dissipation @ TA = 25°C 0.36W θjc θja IDR* 0.17A IDRM 0.8A °C/W 200 °C/W 350 * ID (continuous) is limited by max rated Tj. LETE – OBSO – Electrical Characteristics (@ 25°C unless otherwise specified) Min 15 0.5 1.0 -5.5 100 10 1.0 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 100 50 110 60 35 5 15 15 25 1.8 V ns ns pF 60 50 7.0 0.75 Typ Max Unit V V mV/°C nA µA mA mA Ω Ω %/°C m Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Conditions ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA ID = 1mA, VGS = VDS VGS = ±15V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 3.0, VDS = 15V VGS =1.2V, ID = 2.0mA VGS = 3V, ID = 50mA ID = 50mA, VGS = 3V VDS = 3V, ID = 50mA VGS = 0V, VDS = 15V, f = 1MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 7-68 Ω VDD = 15V ID = 50mA RGEN = 25Ω ISD = 50mA, VGS = 0V ISD = 50mA, VGS = 0V RL OUTPUT D.U.T. TN2101 Typical Performance Curves Output Characteristics 1.0 LETE – OBSO – 1.0 0.8 Saturation Characteristics VGS=5V 0.8 ID (amperes) 4V 0.4 ID (amperes) 0.6 0.6 VGS = 4 V 0.4 3V 0.2 3V 0.2 0 0 4 8 2V 1V 12 16 2V 0 0 1 2 3 4 1V 5 VDS (volts) Transconductance vs. Drain Current 0.25 0.5 VDS (volts) Power Dissipation vs. Temperature 7 VDS = 3V 0.2 -55°C 25°C 125°C 0.4 SOT-23 GFS (siemens) 0.1 PD (watts) 0.3 0.4 0.5 0.15 0.3 0.2 0.05 0.1 0 0 0.1 0.2 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TA (° C) Thermal Response Characteristics TA = 25°C SOT-23 (pulsed) Thermal Resistance (normalized) 0.8 ID (amperes) 1.0 0.6 SOT-23 (DC) 0.4 TO-236AB 0.2 TA = 25 °C PD = 0.36W 0.1 0.01 0.1 1.0 10 100 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 7-69 Typical Performance Curves BVDSS Variation with Temperature 1.1 LETE – OBSO – On-Resistance vs. Drain Current 50 40 TN2101 VGS = 1.2V VGS = 3.0V BVDSS (normalized) RDS(ON) (ohms) -50 0 50 100 150 30 1.0 20 10 0.9 0 0 0.1 0.2 0.3 0.4 0.5 Tj (° C) Transfer Characteristics 1.0 1.4 0.8 ID (amperes) VTH and RDS Variation with Temperature 1.4 RDS(ON) @ 3V, 50mA 1.2 125°C 25°C 1.2 1.0 1.0 0.8 0.8 0.6 -55°C 0.4 0.2 0.6 0 0 2 4 6 8 10 -50 0 VGS(th)@ 1mA 0.6 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj (° C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V C (picofarads) VGS (volts) 6 50 VDS = 15V 96 pF CISS 4 25 COSS CRSS 2 0 0 5 10 15 0 0 45 pF 0.4 0.8 1.2 1.6 2.0 VDS (volts) QG (nanocoulombs) 7-70 RDS(ON) (normalized) VGS(th) (normalized) ID (amperes)