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TN2425

TN2425

  • 厂商:

    SUTEX

  • 封装:

  • 描述:

    TN2425 - Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET - Supertex, Inc

  • 数据手册
  • 价格&库存
TN2425 数据手册
TN2425 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► Low threshold High input impedance Low input capacitance Fast switching speeds Low ON-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-Channel devices General Description The Supertex TN2425 is a low threshold enhancementmode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ► ► ► ► ► ► Logic level interfaces – ideal for TTL and CMOS Solid state relays Medical ultrasound pulsers Analog switches General purpose line drivers Telecom switches Ordering Information Device TN2425 Package Options TO-243AA (SOT-89) TN2425N8 TN2425N8-G BVDSS/BVDGS 250V RDS(ON) (max) ID(ON) (min) Product marking for TO-243AA: TN4C where = 2-week alpha date code 3.5Ω 1.5A -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS ±20V -55°C to +150°C +300°C Pin Configuration D TN2425 Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note 1. Distance of 1.6mm from case for 10 seconds. G D (Top View) S TO-243AA (SOT-89) TN2425 Electrical Characteristics (T =25°C unless otherwise specified) A Symbol Parameter Min Typ Max Units Conditions BVDSS VGS(th) ΔVGS(th) IGSS IDSS Drain-to-source breakdown voltage Gate threshold voltage VGS(th) change with temperature Gate body leakage current Zero gate voltage drain current 250 0.8 0.8 1.5 500 - 105 25 7 5 10 25 5 300 2.0 -5.0 100 10 1.0 6.0 5.0 3.5 1.7 200 100 40 15 25 35 15 1.5 - V V mV/ C nA µA mA A O VGS = 0V, ID = 250µA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = ±20V, VDS = 0V VDS = Max rating, VGS = 0V VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 150mA VGS = 4.5V, ID = 250mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 250mA VGS = 0V, VDS = 25V, f = 1MHz ID(ON) ON-state drain current RDS(ON) ΔRDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time Ω %/ C mmho pF O ns VDD = 25V, ID = 500mA, RGEN = 25Ω VGS = 0V, ISD = 500mA VGS = 0V, ISD = 500mA V ns Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Thermal Characteristics Package TO-243AA ID (continuous)† ID (pulsed) 480mA 1.9A Power Dissipation @TA = 25OC 1.6W‡ θJC (OC/W) θJA (OC/W) 15 78‡ IDR† 480mA IDRM 1.9A Notes: † ID (continuous) is limited by max rated TJ. ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. VDD RL Pulse Generator t (ON) td(ON) VDD Output 0V 10% 90% tr t (OFF) td(OFF) tf Input 10% 90% RGEN D.U.T OUTPUT Switching Waveforms and Test Circuit 10V Input 0V 10% 90% 2 TN2425 Typical Performance Curves Output Characteristics 5 3.0 Saturation Characteristics 4 2.5 VGS = 10V 8V 6V 5V ID (Amperes) ID (Amperes) VGS = 10V 8V 6V 5V 2.0 4V 1.5 3 2 4V 1.0 3V 1 3V 2.5V 0 0 10 20 30 40 50 0.5 2.5V 0.0 0 2 4 6 8 10 VDS (Volts) Transconductance vs. Drain Current 1.0 T A =-55 OC 0.8 V DS =15V 2.0 VDS (Volts) Power Dissipation vs. Case Temperature TO-243AA 1.5 T A =25 OC GFS (siemens) 0.6 T A =125 OC 0.4 PD (Watts) 1.0 0.5 0.2 0.0 0.0 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150 ID (Amperes) Maximum Rated Safe Operating Area 10 TO-243AA (pulsed) 1.0 1.0 TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) TO-243AA P D = 1.6W T C = 2 5 OC O 0.8 TO-243AA (DC) ID (amperes) 0.6 0.1 0.4 0.01 T A =25 OC 0.2 0.001 1 10 100 1000 0 0.001 0.01 0.1 1.0 10 VDS (Volts) 3 tp (seconds) TN2425 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.2 BV @ 250A 10 On Resistance vs. Drain Current BVDSS (Normalized) 8 VGS = 4.5V RDS(ON) (ohms) 1.1 6 1.0 4 VGS = 10V 0.9 2 0.8 -50 0 0 50 100 150 0 1 2 3 4 5 TJ (OC) Transfer Characteristics 3.0 TA = 25OC ID (Amperes) VGS(TH) and RDS(ON) w/ Temperature 2.0 1.8 RDS(ON) @ 10V, 0.5A 1.8 2.5 1.6 1.4 1.2 1.0 0.8 VGS(th) @ 1mA 1.5 2.0 TA = -55OC 1.5 TA = 125 C O 1.2 1.0 0.9 0.5 VDS = 25V 0.6 0.4 -50 0 50 100 0.6 150 0.0 0 2 4 6 8 10 VGS (Volts) Capacitance vs. Drain Source Voltage 200 f = 1MHz TJ (OC) Gate Drive Dynamic Characteristics 10 ID = 480mA 8 150 VDS=10V C (picofarads) VGS (volts) CISS 100 6 VDS=40V 453pF 4 50 COSS CRSS 0 0 10 20 30 40 50 2 128pF 0 0.0 1.0 2.0 3.0 4.0 5.0 VDS (Volts) QG (nanocoulombs) 4 RDS(ON) (normalized) VGS(th) (normalized) ID (Amperes) TN2425 TO-243AA (SOT-89) Package Outline (N8) 4.50 ± 0.10 1.72 ± 0.10 0.40 ± 0.05 Exclusion Zone 1.50 ± 0.10 4.10 ± 0.15 2.45 ± 0.15 2.21 ± 0.08 No Vias/Traces in this area. Shape of pad may vary. 1.05 ± 0.15 0.42 ± 0.06 1.50 BSC 3.00 BSC 0.5 ± 0.06 Top View Side View Bottom View Notes: 1. All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2425 A111506 5
TN2425 价格&库存

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