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TN2510N8

TN2510N8

  • 厂商:

    SUTEX

  • 封装:

  • 描述:

    TN2510N8 - N-Channel Enhancement-Mode Vertical DMOS FETs - Supertex, Inc

  • 数据手册
  • 价格&库存
TN2510N8 数据手册
TN2510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 100V * Same as SOT-89. RDS(ON) (max) 1.5Ω VGS(th) (max) 2.0V ID(ON) (min) 3.0A Order Number / Package TO-243AA* TN2510N8 Die† TN2510ND Product supplied on 2000 piece carrier tape reels. † MIL visual screening available. Product marking for TO-243AA: Features ❏ Low threshold —2.0V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices TN5A❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Package Option D G D S Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 BVDSS BVDGS ± 20V -55°C to +150°C 300°C TO-243AA (SOT-89) Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2510 Thermal Characteristics Package TO-243AA † ID (continuous)* 0.73A ID (pulsed) 5.0A Power Dissipation @ TA = 25°C 1.6W† θjc °C/W 15 θja °C/W 78† IDR* 0.73A IDRM 5.0A * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 100 0.6 2.0 -4.5 100 10 1.0 ID(ON) RDS(ON) ON-State Drain Current 1.2 3.0 Static Drain-to-Source ON-State Resistance 2.0 6.0 15 1.5 1.0 ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 0.4 0.8 70 30 15 125 70 25 10 10 20 10 1.8 V ns VGS = 0V, ISD = 1.5A VGS = 0V, ISD = 1.5A ns VDD = 25V, ID = 1.5A, RGEN = 25Ω pF 2.0 1.5 0.75 %/°C Ω Typ Max Unit V V mV/°C nA µA mA A Conditions VGS = 0V, ID = 2mA VGS = VDS, ID= 1mA VGS = VDS, ID= 1.0mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 250mA VGS = 4.5V, ID = 750mA VGS = 10V, ID = 750mA VGS = 10V, ID = 750mA VDS = 25V, ID = 1.0A VGS = 0V, VDS = 25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD RL OUTPUT D.U.T. TN2510 Typical Performance Curves 10 8 Output Characteristics 10 8 Saturation Characteristics ID (amperes) 4 2 0 8V 6V 4V 3V 0 10 20 30 VDS (volts) 40 50 ID (amperes) 6 VGS = 10V 6 4 2 0 VGS = 10V 8V 6V 4V 3V 0 2 VDS (volts) 4 6 8 10 2.0 1.6 Transconductance vs. Drain Current VDS = 25V TA = -55°C 2.0 Power Dissipation vs. Ambient Temperature TO-243AA GFS (siemens) PD (watts) 1.2 0.8 0.4 0 TA = 25°C TA = 125°C 1.0 0 1 ID (amperes) 2 3 4 5 0 0 25 50 TC (°C) 75 100 125 150 10 Maximum Rated Safe Operating Area 1.0 TO-243AA (pulsed) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 0.6 0.4 0.2 0 0.001 TO-243AA PD = 0.55W TC = 25°C ID (amperes) 1.0 TA = 25°C 0.1 TO-243AA (DC) 0.01 1 10 VDS (volts) 100 1000 0.01 tp (seconds) 0.1 1 10 3 TN2510 Typical Performance Curves BVDSS Variation with Temperature 1.1 10 On-Resistance vs. Drain Current V GS = 5V 8 BVDSS (normalized) RDS(ON) (ohms) 6 1.0 VGS = 10V 4 2 0.9 -50 0 50 100 150 0 0 2 4 6 8 10 Tj (° C) Transfer Characteristics 10 ID (amperes) V(th) and RDS Variation with Temperature 1.2 2.0 VGS = 25V 8 TA = -55°C RDS(ON) @ 5V, 0.75A 1.1 ID (amperes) V(th) @ 1mA 1.6 6 25°C 4 1.0 1.2 125°C 2 0.9 0.8 0.8 0 0 2 4 6 8 10 -50 0 50 100 150 0.4 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj (° C) Gate Drive Dynamic Characteristics f = 1MHz CISS 8 VDS = 10V 75 C (picofarads) VGS (volts) 6 50 VDS = 40V 4 190 pF COSS 25 2 CRSS 0 0 10 20 30 40 0 0 70pF 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized)
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