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TN2535

TN2535

  • 厂商:

    SUTEX

  • 封装:

  • 描述:

    TN2535 - N-Channel Enhancement-Mode Vertical DMOS FETs - Supertex, Inc

  • 数据手册
  • 价格&库存
TN2535 数据手册
TN2535 Low Threshold New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V * Same as SOT-89. RDS(ON) (max) 10Ω VGS(th) (max) 2.0V ID(ON) (min) 1.0A Order Number / Package TO-243AA* TN2535N8 Product supplied on 2000 piece carrier tape reels. Features ❏ Low threshold ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Product marking for TO-243AA TN5S❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS ± 20V -55°C to +150°C 300°C G D S D TO-243AA (SOT-89) 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2535 Thermal Characteristics Package TO-243AA † ID (continuous)* 283mA ID (pulsed) 1.6A Power Dissipation @ TA = 25°C 1.6W† θjc θja IDR* 283mA IDRM 1.6A °C/W 15 °C/W 78† * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS ID(ON) Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current 0.5 1.0 RDS(ON) Static Drain-to-Source ON-State Resistance 15 10 10 ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 125 125 70 25 20 15 25 20 1.8 V ns VGS = 0V, ISD = 200mA VGS = 0V, ISD = 200mA ns VDD = 25V, ID = 200mA, RGEN = 25Ω pF 0.75 %/°C m Ω Parameter Min 350 1.0 2.0 -4.0 100 1.0 Typ Max Unit V V mV/°C nA µA A Conditions VGS = 0V, ID = 250µA VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 20mA VGS = 4.5V, ID = 100mA VGS = 10V, ID = 200mA VGS = 10V, ID = 200mA VDS = 25V, ID = 100mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD RL OUTPUT D.U.T. TN2535 Typical Performance Curves Output Characteristics 2.0 1.2 VGS=10V Saturation Characteristics VGS = 10V 8.0V 6.0V VGS=8V 1.0 5.0V 1.6 VGS=6V ID (Amperes) VGS=5V 1.2 ID (Amperes) 0.8 VGS = 4.0V 0.6 VGS=4V 0.8 0.4 VGS = 3.0V 0.4 VGS=3V 0.2 0.0 0 10 20 30 40 50 0.0 0 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current 0.8 V DS =15V Power Dissipation vs. Ambient Temperature 2.0 TO-243AA T A =-55¡C 1.6 GFS (Siemens) 0.6 PD (Watts) T A =25¡C T A =125¡C 0.4 0.8 1.2 1.6 1.2 0.4 0.8 0.2 0.4 0.0 0.0 0.0 0 25 50 75 100 125 150 ID (Amperes) TA (¡C) Maximum Rated Safe Operating Area 10 A 1.0 Thermal Response Characteristics Thermal Resistance (normalized) T =25¡C TO-243AA (Pulsed) 0.8 ID (Amperes) 1.0 0.6 TO-243AA (DC) TO-243AA TA = 2 5 C PD = 1 . 6 W 0.4 ° 0.1 0.2 0.01 1 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (Volts) tp (seconds) 3 TN2535 Typical Performance Curves 1.2 BVDSS Variation with Temperature BV @ 250µA On Resistance vs. Drain Current 20 VGS = 3V 16 12 8 4 0 0.0 VGS = 10V VGS = 4.5V BVDSS (normalized) 1.0 0.9 0.8 -50 RDS(ON) (ohms) 1.1 0 TJ (¡C) 50 100 150 0.4 ID (Amperes) 0.8 1.2 1.6 2.0 Transfer Characteristics 2.0 TA = 25¡C 1.2 1.1 1.0 0.9 0.8 VDS = 15V 0 2 VGS(th) and RDS(ON) w/ Temperature VGS(th) @ 1mA 2.4 ID (Amperes) TA = -55¡C 1.2 0.8 0.4 0.0 TA = 125¡C 1.6 1.2 0.8 RDS(ON) @ 10V, 0.2A 0 0.4 150 VGS (Volts) 4 6 8 10 0.7 -50 TJ (¡C) 50 100 200 Capacitance vs. Drain Source Voltage f = 1MHz Gate Drive Dynamic Characteristics 10 8 ID = 283mA VDS=10V VDS=40V 295pF 4 2 0 0.0 92pF 0.4 0.8 1.2 1.6 2.0 C (picofarads) 150 100 CISS 50 CRSS 0 10 20 30 COSS 40 0 VGS (volts) 6 VDS (Volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) 1.6 2.0
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