TN2540

TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 400V * Same as SOT-89. † RDS(ON) (max) 12Ω VGS(th) (max) 2.0V ID(ON) (min) 1.0A Order Number / Package TO-92 TN2540N3 TO-243AA* TN2540N8 Die† TN2540ND Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA Features ❏ Low threshold — 2.0V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices TN5D❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Package Options D G Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 D S BVDSS BVDGS ± 20V -55°C to +150°C 300°C SGD TO-243AA (SOT-89) TO-92 Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2540 Thermal Characteristics Package TO-92 TO-243AA † ID (continuous)* 175mA 260mA ID (pulsed) 2.0A 1.8A Power Dissipation @ TA = 25°C 1.0W 1.6W† θjc θja IDR* 175mA 260mA IDRM 2.0A 1.8A °C/W 125 15 °C/W 170 78† * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 400 0.6 -2.5 2.0 -4.0 100 10 1.0 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.3 0.75 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 125 200 95 20 10 125 70 25 20 15 25 20 1.8 V ns VGS = 0V, ISD = 200mA VGS = 0V, ISD = 1A ns VDD = 25V, ID = 1A, RGEN = 25Ω pF 0.5 1.0 8.0 8.0 12 12 0.75 Ω %/°C m Typ Max Unit V V mV/°C nA µA mA A Conditions VGS = 0V, ID = 100µA VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 150mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 100mA VGS = 0V, VDS = 25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD RL OUTPUT D.U.T. TN2540 Typical Performance Curves 2.0 1.6 Output Characteristics 1.0 0.8 Saturation Characteristics VGS =10V 8V 6V 5V VGS =10V 8V 6V 5V ID (amperes) 0.8 0.4 0 ID (amperes) 1.2 0.6 0.4 0.2 0 4V 3V 0 2 4V 0 10 VDS (volts) 20 30 3V 40 50 VDS (volts) 4 6 8 10 1.0 0.8 Transconductance vs. Drain Current VDS = 25V 2.0 Power Dissipation vs. Ambient Temperature TO-243AA GFS (siemens) PD (watts) 0.6 0.4 0.2 0 TA = -55°C 25°C 125°C 1.0 TO-92 0 0.2 0.4 ID (amperes) 0.6 0.8 1.0 1.2 1.4 0 0 25 50 TA (°C) 75 100 125 150 10 Maximum Rated Safe Operating Area 1.0 TO-243AA(pulsed) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 0.6 0.4 0.2 0 0.001 ID (amperes) 1.0 TO-243AA(DC) 0.1 TO-243AA TA = 25 °C PD = 1.6W TO-92 (DC) 0.01 1 10 VDS (volts) 100 1000 0.01 tp (seconds) 0.1 1 10 3 TN2540 Typical Performance Curves BVDSS Variation with Temperature 1.1 50 On-Resistance vs. Drain Current 40 V GS = 4.5V BVDSS (normalized) RDS(ON) (ohms) VGS = 10V 30 1.0 20 10 0.9 -50 0 50 100 150 0 0 0.4 0.8 1.2 1.6 2.0 Tj (° C) Transfer Characteristics 1.5 ID (amperes) V(th) and RDS Variation with Temperature 2.5 VDS = 25V 1.2 1.4 R DS(ON) @ 10V, 0.5A 2.0 1.2 ID (amperes) TA = -55° C 0.9 1.5 1.0 1.0 0.8 0.5 0.6 0 0.6 25°C 0.3 125°C 0 2 4 6 8 10 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj (° C) Gate Drive Dynamic Characteristics f = 1MHz 8 150 VDS = 10V C (picofarads) VGS (volts) 6 100 CISS 4 VDS = 40V 260 pF 50 2 CRSS 0 0 10 20 30 COSS 0 40 0 95pF 0.4 0.8 1.2 1.6 2.0 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) V(th) @ 1mA