TN2640K4

TN2640 TN2640 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 400V † RDS(ON) (max) 5.0Ω VGS(th) (max) 2.0V ID(ON) (min) 2.0A Order Number / Package SO-8 TN2640LG TO-92 TN2640N3 DPAK TN2640K4 Die† TN2640ND MIL visual screening available. Features ❏ Low threshold — 2.0V max. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Package Options D (TAB) G S SGD TO-92 TO-252 (D-PAK) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C NC NC S G 1 2 3 4 8 7 6 5 D D D D top view SO-8 Note: See Package Outline section for dimensions. 12/19/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2640 Thermal Characteristics Package TO-92 SO-8 DPAK ID (continuous)* 220mA 260mA 500mA ID (pulsed) 2.0A 2.0A 3.0A Power Dissipation @ TC = 25°C 1.0W 1.3W† 2.5W† θjc θja IDR* 220mA 260mA 500mA IDRM 2.0A 2.0A 3.0A °C/W 125 24 6.25 °C/W 170 96† 50 * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 400 0.8 -2.5 2.0 -4.0 100 10 1.0 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 1.5 2.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 200 330 180 35 7.0 4.0 15 20 22 225 70 25 15 20 25 27 0.9 V ns VGS = 0V, ISD = 200mA VGS = 0V, ISD = 1.0A ns VDD = 25V, ID = 2.0A, RGEN = 25Ω pF 3.5 4.0 3.2 3.0 5.0 5.0 0.75 Ω %/°C m Typ Max Unit V V mV/°C nA µA mA A Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID= 2.0mA VGS = VDS, ID= 2.0mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 500mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 100mA VGS = 0V, VDS = 25V f = 1.0 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD RL OUTPUT D.U.T. TN2640 Typical Performance Curves Output Characteristics 5.0 2.5 Saturation Characteristics VGS = 1 0V 6V 4.0 2.0 8V VGS = 1 0V ID (amperes) ID (amperes) 3.0 6V 8V 4V 1.5 4V 3V 2.0 1.0 3V 1.0 0.5 2V 0 0 10 20 30 40 2V 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 2.0 3.0 VDS (volts) Power Dissipation vs. Temperature 1.6 D PAK 2.4 GFS (siemens) VDS = 25V PD (watts) 1.2 1.8 SO-8 1.2 TO-92 0.8 TA = -55°C 0.4 25°C 125°C 0.6 0 0 1.0 2.0 3.0 4.0 5.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC (°C) Thermal Response Characteristics TO-92 (pulsed) 1.0 DPAK (DC) SO-8 (pulsed) 0.1 TO-92 (DC) Thermal Resistance (normalized) 0.8 ID (amperes) 0.6 SO-8 (DC) 0.01 0.4 TC = 25°C 0.2 TO-92 TC = 25 °C PD = 1.0W 0.01 0.1 1.0 10 0.001 0 10 100 1000 0 0.001 VDS (volts) tp (seconds) 3 TN2640 Typical Performance Curves BVDSS Variation with Temperature 1.15 10 On-Resistance vs. Drain Current VGS = 5V 1.10 8 BVDSS (normalized) RDS(ON) (ohms) 1.05 6 VGS = 10V 1.00 4 0.95 0.9 0.90 -50 0 50 100 150 2 0 0 1.0 2.0 3.0 4.0 5.0 Tj (°C) Transfer Characteristics 3.0 1.4 ID (amperes) VTH and RDS Variation with Temperature 2.2 25°C 2.4 1.2 V(th) @ 2mA 1.8 ID (amperes) 1.8 TA = -55°C 125°C VGS(th) (normalized) 1.0 1.4 1.2 0.8 1.0 VDS = 25V 0.6 0.6 RDS(ON)@ 10V, 0.5A 0.6 0 0 2 4 6 8 10 0.4 -50 0 50 100 150 0.2 VGS (volts) Capacitance vs. Drain-to-Source Voltage 400 10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz 8 300 653pF C (picofarads) VGS (volts) 6 200 CISS VDS = 10V 4 VDS = 40V 100 2 COSS 253pF 0 0 10 20 30 CRSS 40 0 0 1 2 3 4 5 VDS (volts) QG (nanocoulombs) 12/19/01rev.1 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized)