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TP2104K1

TP2104K1

  • 厂商:

    SUTEX

  • 封装:

  • 描述:

    TP2104K1 - P-Channel Enhancement-Mode Vertical DMOS FETs - Supertex, Inc

  • 数据手册
  • 价格&库存
TP2104K1 数据手册
TP2104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -40V RDS(ON) (max) 6.0Ω VGS(th) (max) -2.0V Order Number/Package TO-236AB* TP2104K1 TO-92 TP2104N3 Die TP2104ND Product marking for SOT-23: P1L❋ where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Package Options D Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 GS SGD BVDSS BVDGS ± 20V -55°C to +150°C 300°C TO-236AB (SOT-23) top view TO-92 Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP2104 Thermal Characteristics Package SOT-23 TO-92 ID (continuous)* -0.16A -0.25A ID (pulsed) -0.8A -1.0A Power Dissipation @ TA = 25°C 0.36W 0.74W θjc θja IDR* -0.16A -0.25A IDRM -0.8A -1.0A °C/W 200 125 °C/W 350 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -40 -1.0 5.8 -1.0 -2.0 6.5 -100 -10 -1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Typ Max Unit V V mV/°C nA µA mA A Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -10V, VDS = -25V VGS = -4.5V, ID = -50mA VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -25V, ID = -0.5A VGS = 0V, VDS = -25V f = 1 MHz ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time -0.6 10.0 6.0 0.55 150 200 35 22 8 4 4 5 5 -1.2 400 60 30 10 6 8 9 8 -2.0 1.0 Ω Ω %/°C m pF ns V ns Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω VDD = -25V ID = -0.5A RGEN = 25Ω VGS = 0V, ISD = -0.5A VGS = 0V, ISD = -0.5A D.U.T. OUTPUT RL VDD TP2104 Typical Performance Curves Output Characteristics -2.0 -2.0 Saturation Characteristics VGS = -10V -1.6 -1.6 ID (amperes) -1.2 ID (amperes) -8V -1.2 VGS = -10V -8V -0.8 -0.8 -6V -0.4 -6V -0.4 -4V -3V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -4V -3V -8 -10 VDS (volts) Transconductance vs. Drain Current 0.5 1.0 VDS (volts) Power Dissipation vs. Temperature VDS = -25V 0.4 0.8 TO-92 GFS (siemens) 0.2 25°C 125°C PD (watts) 0.3 TA = -55°C 0.6 0.4 SOT-23 0.1 0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -1.0 SOT-23 (pulsed) 1.0 TA (°C) Thermal Response Characteristics Thermal Resistance (normalized) SOT-23 (DC) 0.8 ID (amperes) -0.1 0.6 SOT-23 TA = 2 5 °C PD = 0 .36W TA = 25°C -0.01 0.4 0.2 TO-92 PD = 1W TC = 25°C 0.01 0.1 1.0 10 -0.001 -0.1 -1.0 -10 -100 0 0.001 VDS (volts) tp (seconds) 3 TP2104 Typical Performance Curves BVDSS Variation with Temperature 1.1 20 On-Resistance vs. Drain Current 16 VGS = -4.5V BVDSS (normalized) RDS(ON) (ohms) 12 1.0 VGS = -10V 8 4 0.9 -50 0 50 100 150 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Tj (° C) Transfer Characteristics -2.0 ID (amperes) VGS(th) and R DS(ON) Variation with Temperature 1.2 1.6 1.1 VDS = -25V -1.6 RDS(ON) @ -10V, -0.5A 1.4 -1.2 1.0 VGS(th) @ -1mA 0.9 1.2 -0.8 125°C 1.0 0.8 0.8 25°C -0.4 0 0 -2 -4 -6 -8 -10 0.7 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 -10 Tj (° C) Gate Drive Dynamic Characteristics f = 1MHz -8 75 VDS = -10V C (picofarads) VGS (volts) -6 50 CISS 25 -4 VDS = -40V 125 pF COSS CRSS -2 35 pF 0 0 -10 -20 -30 -40 0 0 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) TA = -55°C ID (amperes)
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