TP2435N8

TP2435 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -350V * ** Die in wafer form. RDS(ON) (max) 15Ω VGS(th) (max) -2.4V ID(ON) (min) -800mA Order Number / Package TO-243AA* TP2435N8 Die** TP2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Product marking for TO-243AA: TP4S❋ where ❋ = 2-week alpha date code Features Low threshold High input impedance Low input capacitance Fast switching speeds Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces Solid state relays Linear Amplifiers Power Management Analog switches Telecom switches D G D S Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 BVDSS BVDGS ± 20V -55°C to +150°C 300°C TO-243AA (SOT-89) Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. TP2435 Thermal Characteristics Package ID (continuous)* -231mA ID (pulsed) -1.1A Power Dissipation @ TA = 25°C TO-243AA † θjc θja IDR* -231mA IDRM -1.1A °C/W 15 °C/W 78† 1.6W† * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -350 -1.0 -2.4 4.5 -100 -10.0 -1.0 ID(ON) RDS(ON) ON-State Drain Current -0.3 -0.8 Static Drain-to-Source ON-State Resistance 15 15 15 ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Typ Max Unit V V mV/°C nA µA mA Conditions VGS = 0V, ID = -250µA VGS = VDS, ID= -1.0mA VGS = VDS, ID= -1.0mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -4.5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -3.0V, ID = -20mA VGS = -4.5V, ID = -150mA VGS = -10V, ID = -500mA VGS = -10V, ID = -150mA VDS = -25V, ID = -350mA VGS = 0V, VDS = -25V f = 1.0 MHz A Ω Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 125 1.7 %/°C m 200 70 25 15 20 25 50 -1.5 V ns ns VDD = -25V, ID = -250mA, RGEN = 25Ω VGS = 0V, ISD = -750mA VGS = 0V, ISD = -750mA pF Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω D.U.T. OUTPUT RL VDD TP2435 Typical Performance Curves Output Characteristics -1.8 -1.0 Saturation Characteristics VGS=-10V -1.5 VGS=-6V -0.8 VGS = -10V -6.0V -4.5V ID (Amperes) -1.2 ID (Amperes) VGS=-4.5V -0.9 -0.6 -3.5V VGS=-3.5V -0.6 VGS=-3V -0.4 -3.0V -0.2 -0.3 -0.0 0 -10 -20 -30 -40 -0.0 0 -2 -4 -6 -8 -10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current 1.0 V DS =-15V Power Dissipation vs. Ambient Temperature 2.0 TO-243AA 0.8 1.6 GFS (Siemens) T 0.6 A =-55¡C PD (Watts) 1.2 T A =25¡C 0.4 T A =125¡C 0.8 0.2 0.4 0.0 0 -100 -200 -300 -400 -500 0.0 0 25 50 75 100 125 150 ID (Milliamperes) TA (¡C) Maximum Rated Safe Operating Area -1.0 TO-243AA (Pulsed) A 1.0 Thermal Response Characteristics Thermal Resistance (normalized) T =25¡C 0.8 ID (Amperes) -0.1 TO-243AA (DC) 0.6 TO-243AA TA = 2 5 C PD = 1 . 6 W 0.4 ° -0.01 0.2 -0.001 -1 -10 -100 -1000 0 0.001 0.01 0.1 1 10 VDS (Volts) tp (seconds) 3 TP2435 Typical Performance Curves 1.2 BVDSS Variation with Temperature BV @ -250µA On Resistance vs. Drain Current 50 40 BVDSS (Normalized) RDS(ON) (ohms) 1.1 VGS = -4.5V 30 20 10 0 0.0 VGS = -10V 1.0 0.9 0.8 -50 0 TJ (¡C) 50 100 150 -0.3 -0.6 ID (Amperes) -0.9 -1.2 -1.5 -1.8 Transfer Characteristics -1.4 -1.2 VDS = -15V 1.2 TA = -55¡C TA = 25¡C TA = 125¡C 1.1 1.0 0.9 0.8 VGS(TH) and RDS(ON) w/ Temperature VGS(th) @ -1mA 2.4 ID (Amperes) -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.0 -1.0 -2.0 1.6 1.2 0.8 RDS(ON) @ -10V, -0.5A 0 50 100 150 0.4 VGS (Volts) -3.0 -4.0 0.7 -50 TJ (¡C) Gate Drive Dynamic Characteristics -10 -8 ID = -500mA VDS=-20V 400 Capacitance vs. Drain Source Voltage f = 1MHz C (picofarads) 300 VGS (volts) -6 -4 -2 200 CISS CRSS 0 -10 -20 -30 COSS -40 VDS=-40V 100 0 0 0 1 VDS (Volts) QG (nanocoulombs) 2 3 4 5 6 7 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) 11/12/01 VGS(th) (normalized) 2.0