TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs
Features
► ► ► ► ► ► ► ► Low threshold — -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
General Description
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
► ► ► ► ► ► ► Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Absolute Maximum Ratings
Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS ±20V
Pin Configurations
NC NC S
SGD 1 2 3 4
8 7 6 5
D D D D
G
-55°C to +150°C +300°C
TO-92
(top view)
SO-8
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note 1. Distance of 1.6mm from case for 10 seconds.
Ordering Information
Device Package Options SO-8 TP2640LG TP2640LG-G TO-92 TP2635N3 TP2635N3-G TP2640N3 TP2640N3-G BVDSS/BVDGS -350V RDS(ON) (max) 15Ω VGS(th) (max) -2.0V ID(ON) (min) -0.7A
TP2635
TP2640
-400V
15Ω
-2.0V
-0.7A
-G indicates package is RoHS compliant (‘Green’)
1
TP2635/TP2640
Thermal Characteristics
Package ID (continuous)1 ID (pulsed) SO-8 TO-92 -210mA -180mA -1.25A -0.8A Power Dissipation @TC = 25OC 1.3W2 1.0W Θjc (OC/W) 24 125 Θjc (OC/W) 962 170 IDR1 210mA -180mA IDRM -1.25A -0.8A
Notes: 1. ID (continuous) is limited by max rated Tj. 2. Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BVDSS VGS(th) ΔVGS(th) IGSS
Drain-to-source breakdown voltage Gate threshold voltage
TP2640 TP2635
-400 -350 -0.8 -
-
-2.0 5 -100 -1.0 -10.0 -1.0
V V mV/ C nA µA µA mA A Ω %/OC m Ω
O
VGS = 0V, ID = -2.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = ±20V, VDS = 0V VDS = -100V, VGS = 0V VDS = Max rating, VGS = 0V VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC VGS = -10V, VDS = -25V VGS = -2.5V, ID = -200mA VGS = -4.5V, ID = -150mA VGS = -10V, ID = -300mA VGS = -10V, ID = -300mA VDS = -25V, ID = -300mA VGS = 0V, VDS = -25V, f = 1MHz
Change in VGS(th) with temperature Gate body leakage
IDSS
Zero gate voltage drain current
-
-
ID(ON) RDS(ON) ΔRDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
ON-state drain current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time
0.7 200 -
12 11 11 300
15 15 15 0.75 300 50 12 10 15 60 40 -1.8 -
pF
ns
VDD = 25V, ID = 2.0A, RGEN = 25Ω VGS = 0V, ISD = 200mA VGS = 0V, ISD = 1.0A
V ns
Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested.
N- Channel Switching Waveforms and Test Circuit
0V
10%
PULSE GENERATOR 90%
t(ON) Rgen
INPUT
-10V
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
D.U.T. OUTPUT RL
90% OUTPUT
VDD
90% 10%
10%
VDD
2
TP2635/TP2640
Typical Performance Curves
Output Characteristics
-2.0 -1.0
Saturation Characteristics
-8V -8V -6V -6V
-0.8
VGS = - 10V
-1.6
VGS = - 10V
ID (amperes)
-4V
ID (amperes)
-1.2
-0.6
-0.8
-4V
-0.4
-3V
-0.2
-0.4
-3V
0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10
VDS (volts) Transconductance vs. Drain Current
1.0 2.0
VDS (volts) Power Dissipation vs. Temperature
0.8
1.6
GFS (siemens)
VDS = -25V
SO-8
PD (watts)
0.6
1.2 TO-92
0.4
TA = -55°C
0.8
0.2
125°C
0 0 -0.4 -0.8 -1.2
25°C
0.4
0 -1.6 -2.0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10 SO-8 (pulsed) 1.0
TC (° C) Thermal Response Characteristics
Thermal Resistance (normalized)
-1.0
0.8
TO-92 (pulsed) SO-8 (DC)
ID (amperes)
0.6
-0.1
TO-92 (DC)
0.4
-0.01
TC = 25°C
0.2
TO-92 TC = 25 °C PD = 1.0W 0.01 0.1 1.0 10
-0.001 -1 -10 -100 -1000
0 0.001
VDS (volts)
tp (seconds)
3
TP2635/TP2640
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
30 1.1 24
On-Resistance vs. Drain Current
VGS = -2.5V VGS = -4.5V
BVDSS (normalized)
RDS(ON) (ohms)
18
1.0
12
VGS = -10V
6 0.9 0 -50 0 50 100 150 0 -0.4 -0.8 -1.2 -1.6 -2.0
Tj (° C) Transfer Characteristics
-2.0
ID (amperes) VTH and RDS Variation with Temperature
2.5
VDS = -25V
-1.6
1.2
V(th) @ -1mA
VGS(th) (normalized)
ID (amperes)
-1.2
TA = -55°C
1.0 1.5 0.8 1.0 0.6
25°C
-0.8
RDS(ON)@ -10V, -0.3A
0.5
-0.4 0.4 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150
0
VGS (volts) Capacitance vs. Drain-to-Source Voltage
400 -10
Tj (° C) Gate Drive Dynamic Characteristics
f = 1MHz
-8 300
678pF
C (picofarads)
VGS (volts)
CISS
200
-6
VDS = -10V
-4
VDS = -40V
100 -2
COSS
263pF
0 0 -10 -20 -30
CRSS
-40
0 0 1 2 3 4 5
VDS (volts)
QG (nanocoulombs)
4
RDS(ON) (normalized)
+125°C
2.0
TP2635/TP2640
8-Lead SOIC Package Outline (LG)
4.90 ± 0.10 8 6.00 ± 0.20 3.90 ± 0.10 Note 2
1
Top View
0.17 - 0.25 1.75 MAX 1.25 MIN
5° - 15° (4 PLCS) 45°
0.25 - 0.50 Note 2
0° - 8° 0.10 - 0.25 1.27BSC 0.40 - 1.27
0.31 - 0.51
Side View
Notes: 1. All dimensions in millimeters. Angles in degrees. 2. If the corner is not chamfered, then a Pin 1 identifier must be located within the area indicated.
End View
3-Lead TO-92 Package Outline (N3)
0.135 MIN 0.125 - 0.165 0.080 - 0.105 1 2 3
Bottom View
0.175 - 0.205 0.170 - 0.210 123
Seating Plane
0.500 MIN 0.014 - 0.022 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105
Front View
Side View
Notes: All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-TP2635_TP2640 C032807
5
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