VN0540

VN0540 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 400V † MIL visual screening available RDS(ON) (max) 35Ω ID(ON) (min) 250mA Order Number / Package TO-92 VN0540N3 Die† VN0540ND 7 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. SGD TO-92 BVDSS BVDGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 7-161 VN0540 Thermal Characteristics Package TO-92 ID (continuous)* 100mA ID (pulsed) 400mA Power Dissipation @ TC = 25°C 1.0W °C/W 125 θjc °C/W 170 θja IDR* 100mA IDRM 400mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 400 2 -3.5 4 -4.5 100 10 500 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 250 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 400 100 300 340 30 25 0.9 180 45 8 2 55 10 5 10 10 10 10 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V, ID = 250mA RGEN = 25Ω pF VGS = 0V, VDS = 25V f = 1 MHz 35 1.5 µA Typ Max Unit V V mV/°C nA Conditions VGS = 0V, ID = 1mA VGS = VDS , ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 20mA VGS = 10V, ID = 0.1A VGS = 10V, ID = 0.1A VDS = 25V, ID = 0.1A mA Ω %/° C m Ω Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen VDD RL OUTPUT D.U.T. 10% 10% INPUT 7-162 VN0540 Typical Performance Curves Output Characteristics 0.5 0.25 Saturation Characteristics 0.4 VGS = 10V 0.20 VGS = 1 0V 5V ID (amperes) 5V 4V 4V 0.2 ID (amperes) 0.3 0.15 0.10 0.1 0.05 3V 3V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 7 VDS (volts) Transconductance vs. Drain Current 0.25 10 VDS (volts) Power Dissipation vs. Case Temperature VDS = 25V 0.2 TA = -55°C 8 GFS (siemens) 0.1 TA = 125°C PD (watts) 0.15 TA = 25°C 6 4 0.05 2 TO-92 0 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 0 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 TO-39 (DC) ID (amperes) 0.1 TO-92 (DC) 0.6 0.4 0.01 0.2 TC = 25°C 0.001 1 10 100 1000 TO-92 PD = 1 .0W TC = 2 5 °C 0.01 0.1 1 10 0 0.001 VDS (volts) tp (seconds) 7-163 VN0540 Typical Performance Curves BVDSS Variation with Temperature 100 1.1 80 On-Resistance vs. Drain Current BVDSS (normalized) VGS = 5V RDS(ON) (ohms) 60 1.0 VGS = 10V 40 20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 Tj (°C) Transfer Characteristics 0.5 ID (amperes) V(th) and RDS Variation with Temperature VDS = 25V 0.4 1.4 1.8 ID (amperes) 25°C 0.3 1.2 V(th) @ 1mA 1.4 1.0 1.0 0.2 125°C 0.1 0.8 0.6 0.6 0 0 2 4 6 8 10 -50 0 50 100 150 0.2 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj(°C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V 40V C (picofarads) VGS (volts) 6 112 pF 50 CISS 4 25 2 COSS 0 0 10 50 pF 0 CRSS 20 30 40 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 7-164 RDS(ON) (normalized) VGS(th) (normalized) TA = -55°C RDS(ON) @ 10V, 0.1A