VN0550

VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 500V RDS(ON) (max) 60Ω ID(ON) (min) 150mA Order Number / Package TO-92 VN0550N3 Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 SGD TO-92 BVDSS BVDGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN0550 Thermal Characteristics Package TO-92 ID (continuous)* 78mA ID (pulsed) 250mA Power Dissipation @ TC = 25°C 1.0W θjc θja IDR* 78mA IDRM 250mA °C/W 125 °C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN0550 Min 500 2 -3.8 4 -5.0 100 10 1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 150 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 300 50 100 350 45 40 1 100 45 8 2 55 10 5 10 15 10 10 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V, ID = 150mA, RGEN = 25Ω pF 60 1.7 Ω %/°C m Typ Max Unit V V mV/°C nA µA mA Conditions VGS = 0V, ID = 1mA VGS = VDS , ID = 1mA VGS = VDS , ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA VGS = 0V, VDS = 25V f = 1 MHz mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD RL OUTPUT D.U.T. VN0550 Typical Performance Curves 0.5 0.4 Output Characteristics VGS = 10V 0.25 Saturation Characteristics 8V 6V 0.20 VGS = 10V 8V 6V ID (amperes) 0.2 0.1 0 ID (amperes) 0.3 0.15 0.10 0.05 4V 0 10 20 30 VDS (volts) 40 50 4V 0 2 0 VDS (volts) 4 6 8 10 0.40 0.32 Transconductance vs. Drain Current VDS = 25V TA = -55°C 2.0 Power Dissipation vs. Case Temperature GFS (siemens) PD (watts) 0.24 0.16 0.08 0 TA = 25°C TA = 125°C 1.0 TO-92 0 0.1 ID (amperes) 0.2 0.3 0.4 0.5 0 0 25 50 TC (°C) 75 100 125 150 1.0 Maximum Rated Safe Operating Area 1.0 Thermal Response Characteristics Thermal Resistance (normalized) 0.8 0.6 0.4 0.2 0 0.001 ID (amperes) 0.1 TO-92 (DC) 0.01 TO-92 PD = 1W TC = 25 °C 0.01 0.1 1 10 0.001 TC = 25°C 1 10 VDS (volts) 100 1000 tp (seconds) 3 VN0550 Typical Performance Curves BVDSS Variation with Temperature 100 1.1 80 On-Resistance vs. Drain Current VGS = 5V BVDSS (normalized) RDS(ON) (ohms) 60 VGS = 10V 1.0 40 20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 Tj (°C) Transfer Characteristics 0.5 ID (amperes) V(th) and RDS Variation with Temperature 1.4 1.8 VDS = 25V 0.4 RDS(ON) @ 10V, 50mA VGS(th) (normalized) TA = -55 ° C 25°C 1.2 1.4 0.3 V(th) @ 1mA 1.0 1.0 150°C 0.2 0.8 0.6 0.1 0.6 0 0.2 0 2 4 6 8 10 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj(°C) Gate Drive Dynamic Characteristics VDS = 10V 8 f = 1MHz 75 105 pF C (picofarads) VGS (volts) 6 50 CISS VDS = 40V 4 112 pF 25 2 COSS CRSS 0 0 10 20 30 40 50 pF 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) ID (amperes)